衬底热空穴导致的薄栅介质经时击穿的物理模型研究1

该文定量研究了热电子和空穴注入对薄栅氧化层击穿的影响,讨论了不同应力条件下的阈值电压变化,首次提出了薄栅氧化层的经时击穿是由热电子和空穴共同作用的结果,并对上述实验现象进行了详细的理论分析,提出了薄栅氧化层经时击穿分两步。首先注入的热电子在薄栅氧化层中产生陷阱中心,然后空穴陷入陷阱导致薄栅氧击穿。     

基于刻蚀工艺的IC关键面积计算模型与实现方法

在 IC的制造过程中 ,由于工艺的随机扰动 ,过刻蚀和欠刻蚀造成了导线条的宽度和线间距的变化 .论文在分析过刻蚀和欠刻蚀对 IC版图影响的基础上 ,提出了基于工艺偏差影响的 IC关键面积计算新模型和实现方法 .模拟实验表明模拟结果与理论分析是一致的     

集成双极型晶体管模型参数的总体优化提取

本文给出了采用分步式总体优化提取双极GP模型直流参数的方法,其中包括双向目标函数的建立、参数提取等级的划分和初值的确定,以及模型参数的全城总体提取。文中介绍了用该法编制的程序及其成功的应用。     

集成电路可制造性经济学模型（一）—广义前道工序模型

文章从集成电路（ＩＣ）发展规律出发，提出了可制造性设计的必要性和迫切性，并提出了基于可制造性设计的ＩＣ前道工序成本模型，为实现成本驱动设计的自动化和最优化打下必要的基础。     

采用混合晶向实现PMOSFET迁移率提升了150%

本文提出了一种基于混合晶向硅材料的高性能PMOSFET 器件。采用硅玻键合、化学机械抛光、硅刻蚀和非选择性外延等方法,成功制作了集成有（100）和（110）晶向的混合晶向硅片。基于这种混合晶向材料,成功研制了沟道宽长比为50：8 的PMOSFET器件,器件测试结果表明：制作在（110）晶向上的PMOSFET 器件在低场条件下,电流驱动能力提高了50.7%,最大迁移率增加了150%,是当前见于报道的PMOSFET迁移率提升指标较高的一颗器件。     

Progress in Group Ⅲ nitride semiconductor electronic devices

Recently there has been a rapid domestic development in groupⅢnitride semiconductor electronic materials and devices.This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China,which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures,and eventually achieve high performance GaN microwave power devices.Some remarkable progresses achieved in the program will be introduced,including those in GaN high electron mobility transistors(HEMTs) and metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) with novel high-k gate insulators,and material growth,defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication,and quantum transport and spintronic properties of GaN-based heterostructures,and highelectric -field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources.     

MQ编码算法优化及高速VLSI结构设计与实现

传统的JPEG2000MQ编码器串行编码效率低下,同时现有的多上下文并行编码的MQ编码器占用资源过大.本文对MQ编码算法中的运算流程,索引值和概率估计值的求解函数,条件交换和重归一化算法等四个方面进行了优化,减弱了上下文之间的依赖性,简化了条件交换和重归一化算法的复杂度.依据该算法,本文提出了一种高速的MQ编码器VLSI结构,实验结果表明,本文提出的MQ编码器VLSI结构能够工作在532.91MHz,吞吐率为532.91 Msymbols/sec,相比Dyer提出的Brute force with modified结构,工作频率提高1倍,吞吐量提高近27%,且面积仅为其四分之一.     

GaN:Si薄膜的结构和应力特性研究

对掺杂浓度为1017～1019cm-3的GaN:Si样品进行高精度X射线衍射和拉曼散射光谱的研究发现:随着Si掺杂浓度的增加,GaN晶粒尺寸逐渐减小,引发更多的螺位错和混合位错致使摇摆曲线的半高宽有所增加,同时薄膜中的剩余应力也逐渐减小。当掺杂浓度高于2.74×1018cm-3时,薄膜从压力状态转变为张力状态。     

X 波段氮化镓合成固态放大器

Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.