14W X波段AlGaN/GaN HEMT功率MMIC

报道了研制的SiC衬底AIGaN/GaN HEMT微带结构微波功率MMIC,芯片工艺采用凹槽栅场板结构提高AlGaN/GaNHEMTs的微波功率特性.S参数测试结果表明AlGaN/GaN HEMTs的频率特性随器件的工作电压变化显著.研制的该2级功率MMIC在9～11GHz带内30V工作,输出功率大于10W,功率增益大于12dB,带内峰值输出功率达到14.7W,功率增益为13.7dB,功率附加效率为23%,该芯片尺寸仅为2.0mm×1.1mm.与已发表的X波段AlGaN/GaN HEMT功率MMIC研制结果相比,本项工作在单位毫米栅宽输出功率和芯片单位面积输出功率方面具有优势.     

A high-performance enhancement-mode AIGaN/GaN HEMT

An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment.The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V. The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of 1μm are 10.3 GHz and 12.5 GHz,respectively,which is compa...     

Breakdown voltage and current collapse of F-plasma treated AIGaN/GaN HEMTs

The breakdown and the current collapse characteristics of high electron mobility transistors （HEMTs） with a low power F-plasma treatment process are investigated. With the increase of F-plasma treatment time, the saturation current decreases, and the threshold voltage shifts to the positive slightly. Through analysis of the Schottky characteristics of the devices with different F-plasma treatment times, it was found that an optimal F-plasma treatment time of 120 s obviously reduced the gate reverse leakage current and improved the breakdown voltage of the devices, but longer F-plasma treatment time than 120 s did not reduce gate reverse leakage current due to plasma damage. The current collapse characteristics of the HEMTs with F-plasma treatment were evaluated by dual pulse measurement at different bias voltages and no obvious deterioration of current collapse were found after low power F-plasma treatment.     

Impact of UV/ozone surface treatment on AIGaN/GaN HEMTs

Surface treatment plays an important role in the process of making high performance AlGaN/GaN HEMTs. A clean surface is critical for enhancing device performance and long-term reliability. By experimenting with different surface treatment methods, we find that using UV/ozone treatment significantly influences the electrical properties of Ohmic contacts and Schottky contacts. According to these experimental phenomena and Xray photoelectron spectroscopy surface analysis results, the effect of the UV/ozone treatment and the reason that it influences the Ohmic/Schottky contact characteristics of AlGaN/GaN HEMTs is investigated.     

蓝宝石衬底上AIGaN／GaN HEMT自热效应研究

建立了包含“自热效应”的AIGaN／GaN HEMT（高电子迁移率晶体管）直流I-V特性解析模型。从理论的角度分析了自热效应对AlGaN／GaN HEMT器件的影响，并同已有的实验结果进行了对比，符合较好。证明基于这种模型的理论分析适于AIGaN／GaN HEMT器件测试及应用的实际情况。     

Effects of rapid thermal annealing on ohmic contact of AIGaN/GaN HEMTs

Ohmic contacts with Ti/Al/Ti/Au source and drain electrodes on A1GaN/GaN high electron mobility transistors （HEMTs） were fabricated and subjected to rapid thermal annealing （RTA） in flowing N2. The wafer was divided into 5 parts and three of them were annealed for 30 s at 700, 750, and 800 ℃, respectively, the others were annealed at 750 ℃ for 25 and 40 s. Due to the RTA, a change from Schottky contact to Ohmic contact has been obtained between the electrode layer and the A1GaN/GaN heterojunction layer. We have achieved a low specific contact resistance of 7.41 × 10-6Ω cm2 and contact resistance of 0.54 Ω.mm measured by transmission line mode （TLM）, and good surface morphology and edge acuity are also desirable by annealing at 750 ℃ for 30 s. The experiments also indicate that the performance of ohmic contact is first improved, then it reaches a peak, finally degrading with annealing temperature or annealing time rising.     

基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计

研制了一种基于AlGaN/GaN HEMT的功率合成技术的混合集成放大器电路.该电路包含4个10×120 μm的HEMT晶体管以及一个Wilkinson功率合成器和分配器.在偏置条件为VDS=40V,IDS=0.9A时,输出连续波饱和功率在5.4GHz达到41.4dBm,最大的PAE为32.54%,并且功率合成效率达到69%.     

Analysis of AIGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress

Semi-on DC stress experiments were conducted on A1GaN/GaN high electron mobility transistors （HEMTs） to find the degradation mechanisms during stress. A positive shift in threshold voltage （VT） and an increase in drain series resistance （RD） were observed after semi-on DC stress on the tested HEMTs. It was found that there exists a close correlation between the degree of drain current degradation and the variation in VT and RD. Our analysis shows that the variation in Vx is the main factor leading to the degradation of saturation drain current （IDs）, while the increase in RD results in the initial degradation of Ios in linear region in the initial several hours stress time and then the degradation of VT plays more important role. Based on brief analysis, the electron trapping effect induced by gate leakage and the hot electron effect are ascribed to the degradation of drain current during semi-on DC stress. We suggest that electrons in the gate current captured by the traps in the A1GaN layer under the gate metal result in the positive shift in VT and the trapping effect in the gate-drain access region induced by the hot electron effect accounts for the increase in RD.     

AIGaN／GaN HEMT高温特性的研究进展

回顾了在高温条件下AIGaN／GaN HEMT器件特性的研究进展。发现2DEG的高温特性是影响器件高温性能的根本内在因素，且外延材料的缺陷、衬底及其器件的封装形式也影响器件的高温特性。最后总结了适合高温下工作的AIGaN／GaN HEMT的改进方法。     

Investigation of the current collapse induced in InGaN back barrier AIGaN/GaN high electron mobility transistors

Current collapses were studied, which were observed in A1GaN/GaN high electron mobility transistors （HEMTs） with and without InGaN back barrier （BB） as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB A1GaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in A1GaN/GaN HEMTs for short-term direct current stress.     

碳致深能级引起的AlGaN/GaN HEMT电流崩塌现象

AlGaN/GaN HEMT良好的功率特性虽然被大量报导,但其电流崩塌现象仍是一个令人困扰的问题,作者通过实验证明了导致其电流崩塌的一个因素.两个AlGaN/GaN样片被分别放在纯氮气和掺碳的氮气气氛中快速退火,利用XPS证明了后者中的碳元素含量远远大于前者.比较二者的I-V特性曲线,可发现碳杂质的引入可使AlGaN/GaN HEMT电流崩塌程度大大增加.分析表明:由碳杂质引入导致的深能级使得负栅压下俘获沟道中的载流子在正栅压下不能立刻释放,从而引起AlGaN/GaN HEMT中的电流崩塌现象.     

界面极化效应对AIxGa1-xN／GaN异质结pin探测器光电响应的影响

设计了正面入射的探测波长范围限制在326～365nm的AlxGa1-χN／GaN异质结pin光电探测器，利用自洽求解薛定谔-泊松方程计算了A1xGa1-xN／GaN异质结在无极化、完全极化和部分极化的能带图，结合光电响应谱的模拟，分析了界面极化效应对AlxGa1-xN／GaN异质结pin紫外光电探测器响应特性的影响并提出了改善方法。     

X波段高输出功率凹栅AIGaN／GaN HEMT

使用自主研制的SiC衬底GaNHEMT外延材料，研制出高输出功率A1GaN／GaNHEMT，优化了器件研制工艺，比接触电阻率小于1．0×10^-6Ω·cm^2，电流崩塌参量小于10％，击穿电压大于80V．小栅宽器件工作电压达到40V，频率为8GHz时输出功率密度大于10W／mm．栅宽为2mm单胞器件，工作电压为28V，频率为8GHz时，输出功率为12．3W，功率增益为4．9dB，功率附加效率为35％．四胞内匹配总栅宽为8mm器件，工作电压为27V时，频率为8GHz时，输出功率为33．8W，功率增益为6．3dB，功率附加效率为41．77％，单胞器件和内匹配器件输出功率为目前国内该器件输出功率的最高结果．     

RF-MBE生长AlGaN/GaN极化感应二维电子气材料

用射频等离子体辅助分子束外延技术 (RF- MBE)在 C面蓝宝石衬底上外延了高质量的 Ga N膜以及 Al Ga N/Ga N极化感应二维电子气材料 .所外延的 Ga N膜室温背景电子浓度为 2× 10 1 7cm- 3 ,相应的电子迁移率为 177cm2 /(V· s) ;Ga N (0 0 0 2 ) X射线衍射摇摆曲线半高宽 (FWHM)为 6′;Al Ga N/Ga N极化感应二维电子气材料的室温电子迁移率为 730 cm2 /(V· s) ,相应的电子气面密度为 7.6× 10 1 2 cm- 2 ;用此二维电子气材料制作的异质结场效应晶体管 (HFET)室温跨导达 5 0 m S/mm (栅长 1μm) ,截止频率达 13GHz(栅长 0 .5 μm)     

Monolithically integrated enhancement/depletion-mode AIGaN/GaN HEMT D flip-flop using fluorine plasma treatment

Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer. Direct-coupled FET logic circuits, such as an E/D HEMT inverter, NAND gate and D flip-flop, were fabricated on an AlGaN/GaN heterostructure. The D flip-flop and NAND gate are demonstrated in a GaN system for the first time. The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area, integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate. E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure. At a supply voltage of 2 V, the E/D inverter shows an output logic swing of 1.7 V, a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V. The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs.     

用于紫外探测器的AlGaN/GaN异质结构的Ti/Al/Ni/Au欧姆接触特性

采用Ti/Al/Ni/Au多层金属体系在Al0.27Ga0.73N/GaN异质结构上制备了欧姆接触.分别采用线性传输线方法(LTLM)和圆形传输线方法(CTLM)对其电阻率进行了测试.当Ti(10nm)/Al(100nm)/Ni(40nm)/Au(100nm)金属体系在650℃高纯N2气氛中退火30s时,测量得到的最小比接触电阻率为1.46×10-5Ω·cm2.并制备了Al0.27Ga0.73N/GaN光导型紫外探测器,通过测试发现探测器的暗电流.电压曲线呈线性分布.实验结果表明在Al0.27 Ga0.73N/GaN异质结构上获得了好的欧姆接触,能够满足制备高性能AlGaN/GaN紫外探测器的要求.     

Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AIGaN/GaN heterostuctures

The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia （IASA） method on AlGaN/GaN heterostructures was studied. The use of AlN by the IASA method can effectively increase the crystalline quality and surface morphology of GaN. The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated.     

Effect of a high temperature AIN buffer layer grown by initially alternating supply of ammonia on AIGaN/GaN heterostuctures

morphology of GaN. The mobility and concentration of 2DEG of A1GaN/GaN heterostuctures was also ameliorated.