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Characteristics of AIGaN/GaN/AIGaN double heterojunction HEMTs with an improved breakdown voltage |
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| Authors: | Ma Juncai Zhang Jincheng Xue Junshuai Lin Zhiyu Liu Ziyang Xue Xiaoyong Ma Xiaohua and Hao Yue |
| Affiliation: | Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China |
| Abstract: | |
| Keywords: | AlGaN/GaN/A1GaN double heterojunctions breakdown voltage carrier confinement |
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