| 采用混合晶向实现PMOSFET迁移率提升了150% |
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| 引用本文： | 唐昭焕,谭开洲,崔伟,张静,钟怡,徐世六,郝跃,张鹤鸣,胡辉勇,张正璠,胡刚毅.采用混合晶向实现PMOSFET迁移率提升了150%[J].半导体学报,2012,33(6):064002-4. |
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| 作者姓名： | 唐昭焕 谭开洲 崔伟 张静 钟怡 徐世六 郝跃 张鹤鸣 胡辉勇 张正璠 胡刚毅 |
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| 作者单位： | Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China;Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China |
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| 基金项目： | 国家基础研究重大项目基金(No.61398); |
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| 摘 要： | 本文提出了一种基于混合晶向硅材料的高性能PMOSFET 器件。采用硅玻键合、化学机械抛光、硅刻蚀和非选择性外延等方法，成功制作了集成有（100）和（110）晶向的混合晶向硅片。基于这种混合晶向材料，成功研制了沟道宽长比为50：8 的PMOSFET器件，器件测试结果表明：制作在（110）晶向上的PMOSFET 器件在低场条件下，电流驱动能力提高了50.7%，最大迁移率增加了150%，是当前见于报道的PMOSFET迁移率提升指标较高的一颗器件。
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| 关 键 词： | 混合晶向 非选择性外延 载流子迁移率 (110)晶向 PMOSFET 化学机械抛光 |
| 修稿时间： | 2/14/2012 8:19:03 PM |
A 150% enhancement of PMOSFET mobility using hybrid orientation |
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| Tang Zhaohuan,Tan Kaizhou,Cui Wei,Zhang Jing,Zhong Yi,Xu Shiliu,Hao Yue,Zhang Heming,Hu Huiyong,Zhang Zhengfan and Hu Gangyi.A 150% enhancement of PMOSFET mobility using hybrid orientation[J].Chinese Journal of Semiconductors,2012,33(6):064002-4. |
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| Authors: | Tang Zhaohuan Tan Kaizhou Cui Wei Zhang Jing Zhong Yi Xu Shiliu Hao Yue Zhang Heming Hu Huiyong Zhang Zhengfan and Hu Gangyi |
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| Affiliation: | Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China;Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China |
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| Abstract: | |
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| Keywords: | hybrid orientation non-selective expitaxy carrier mobility (110) crystal orientation PMOSFET chemical mechanical polishing |
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