| Progress in Group Ⅲ nitride semiconductor electronic devices |
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| 引用本文： | 郝跃,张金风,沈波,刘新宇.Progress in Group Ⅲ nitride semiconductor electronic devices[J].半导体学报,2012,33(8):1-8. |
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| 作者姓名： | 郝跃 张金风 沈波 刘新宇 |
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| 作者单位： | Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University;School of Physics,Peking University;Key Laboratory of Microwave Devices and Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences |
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| 基金项目： | Project supported by the Key Program of the National Natural Science Foundation of China(No.60736033) |
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| 摘 要： | Recently there has been a rapid domestic development in groupⅢnitride semiconductor electronic materials and devices.This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China,which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures,and eventually achieve high performance GaN microwave power devices.Some remarkable progresses achieved in the program will be introduced,including those in GaN high electron mobility transistors(HEMTs) and metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) with novel high-k gate insulators,and material growth,defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication,and quantum transport and spintronic properties of GaN-based heterostructures,and highelectric -field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources.
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| 关 键 词： | AlGaN/GaN InAlN/GaN HEMT MOSHEMT Gunn diode |
Progress in Group Ⅲ nitride semiconductor electronic devices* |
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| Hao Yue,Zhang Jinfeng,Shen Bo,and Liu Xinyu.Progress in Group Ⅲ nitride semiconductor electronic devices*[J].Chinese Journal of Semiconductors,2012,33(8):1-8. |
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| Authors: | Hao Yue Zhang Jinfeng Shen Bo and Liu Xinyu |
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| Affiliation: | 1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University, Xi’an 710071,China 2 School of Physics,Peking University,Beijing 100871,China 3 Key Laboratory of Microwave Devices and Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029,China |
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| Abstract: | Recently there has been a rapid domestic development in groupⅢnitride semiconductor electronic materials and devices.This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China,which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures,and eventually achieve high performance GaN microwave power devices.Some remarkable progresses achieved in the program will be introduced,including those in GaN high electron mobility transistors(HEMTs) and metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) with novel high-k gate insulators,and material growth,defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication,and quantum transport and spintronic properties of GaN-based heterostructures,and highelectric -field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. |
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| Keywords: | AlGaN/GaN InAlN/GaN HEMT MOSHEMT Gunn diode |
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