Novel Oxide Trap Behavior in Ultra Thin Gate and Its Study by PDO Method

The degradation of MOSFETs under high field stress has been investigated for a long time. The degradation is due to the newly generated traps. As the gate thickness scaled down rapidly, a conventional method for detecting oxide traps, such as C-V or subthreshold swing, is no longer effective. Some new phenomena also appear, such as Stress Induced Leakage Current (SILC) and soft-breakdown. The oxide traps' behavior and their characteristics are the key problems in the study of degradation. By extracting the change of transition coefficients from the I-V curve and using the PDO (Proportional Differential Operator) method, various oxide traps can be distinguished and as would be helpful in the determination of trap behavior changes during the degradation process.     

二氧化硅与硅界面及其对能带轮廓及MOSFET栅遂穿电流影响的理论研究

利用第一原理对双键及桥氧两种二氧化硅与硅界面模型进行了理论研究。结果表明双键模型的界面转变区宽度较大。这种差别会导致MOSFET栅漏电的不同。遂穿电流的计算表明界面双键模型结构有较大的栅漏电。     

住宅工厂化装修对装修垃圾减少的意义分析

近年来,随着人们生活水平的提高,居室装修也成为一种时尚和潮流。美化居室,原本应该,但同时却产生了大量不利于环境的装修垃圾。人们在美化居室的同时却无意中损坏了他人的利益、破坏了坏境,而本文就住宅工厂化装修带来的高效、合理的材料利用、垃圾管理、生产模式可以为装修垃圾减少做出新的途径。     

SAFERTOS在新型智能负荷检测仪中的应用

介绍了实时操作系统(SAFERTOS)的特点,并将其与μC/OS-Ⅱ进行比较。以SAFERTOS的队列机制为基础,实现了邮箱和信号量机制。最后介绍了SAFERTOS在新型智能负荷监测仪中的应用。     

Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current

Two SiO_2/Si interface structures,which are described by the double bonded model(DBM) and the bridge oxygen model(BOM),have been theoretically studied via first-principle calculations.First-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by BOM.Such a difference will result in a difference in the gate leakage current. Tunneling current calculation demonstrates that the SiO_2/Si...     

基于熵值法的内蒙古上市企业品牌竞争力研究

随着全球化竞争的激烈程度不断加深,各国在国际上的竞争已经从实体经济的竞争转移到品牌的竞争,拥有强势品牌与核心竞争力的国家往往能够在国际市场上获得更多的市场份额。本文以内蒙古上市企业品牌竞争力状况分析为出发点,通过对品牌竞争力来源的仔细梳理,建立了一套适用于内蒙古上市企业的品牌竞争力评价体系,并使用熵值法对评价指标的权重进行计算,以此来对内蒙古上市企业的品牌竞争力水平进行测算,同时提出了一些建议与对策。     

Novel Oxide Trap Behavior in Ultra Thin Gate and Its Study by PDO Method

Oxide traps for stressed MOSFET' s have been extensively investigated in the pastdecades,and the trap generation mechanism was presented[1— 4] .When oxide film isthinner than approximately 7nm,some new phenomena,such as SILC and soft...     

分散剂和超剪切对二氧化硅的协同分散作用

为了提高纳米二氧化硅粉体的分散性，拓展其应用领域，以丙烯酸（AA）、丙烯酸丁酯（BA）为主单体，丙烯酰胺（AM）为功能单体，经自由基溶液聚合法合成了一系列三元共聚物分散剂。采用红外光谱、核磁共振氢谱等对分散剂的分子结构进行了表征，验证了其结构。将此分散剂应用于二氧化硅纳米粉体的表面改性以提高其分散性，同时考察了外加超剪切力场对纳米二氧化硅粉体的分散效果，研究了分散剂用量、超剪切力场强度和分散时间等因素对纳米二氧化硅平均粒径的影响，优化了工艺参数。激光粒度和透射电镜分析结果表明，在分散剂用量为二氧化硅质量的1%、超剪切设备转速为18 000 r/min、分散时间为30 min条件下，由于分散剂和超剪切的协同作用，纳米二氧化硅悬浮液的分散性能最佳。