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本文研制了一种与0.1μm SOI CMOS工艺兼容的射频PD SOI NMOSFET,并分析了电离总剂量辐照对四种不同结构射频器件的静态特性和频率特性的影响,分别包括前/背栅阈值、泄漏电流、跨导,输出特性以及交流小信号电流增益和最大有效/稳定增益。实验表明,在室温环境下经过总剂量为1Mrad(Si)的g射线辐照,所有的射频PDSOI NMOSFET的静态和射频特性均表现出明显退化,其中以浮体NMOSFET变化最大。虽然损失了部分驱动电流、开关速度和高频特性,LBBC型体接触结构的射频器件仍表现出优于GBBC和BTS型体接触结构的射频器件的抗电离总剂量辐照的能力。 相似文献
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正The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced technologies as an electrostatic-discharge(ESD) protection device.This paper presents the reverse breakdown,current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes.To evaluate the ESD robustness,the forward and reverse TLPⅠ-Ⅴcharacteristics were measured.The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally,to explain the effects of the device parameters,we analyze and discuss the inherent properties of polysilicon p-i-n diodes. 相似文献
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This paper presents an improved analytical model for an RF-LDMOST structure based on the 2D Poisson equation.The derived model indicates the influence of high doped shallow drift and low doping concentration p epitaxial layer on the electric field distribution.In particular,the importance of the thickness of the p epitaxial layer for electric field distributions in RF-LDMOST are shown through MATLAB analytical results based on the model.Then ISE TCAD simulations and experiments are processed and their re... 相似文献
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