Investigation of the polysilicon p-i-n diode and diode string as a process compatible and portable ESD protection device |
| |
Authors: | Jiang Yibo Du Huan Han Zhengsheng |
| |
Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
| |
Abstract: | The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced technologies as an electrostatic-discharge(ESD) protection device.This paper presents the reverse breakdown,current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes.To evaluate the ESD robustness,the forward and reverse TLPⅠ-Ⅴcharacteristics were measured.The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally,to explain the effects of the device parameters,we analyze and discuss the inherent properties of polysilicon p-i-n diodes. |
| |
Keywords: | polysilicon p-i-n diode ESD polysilicon p-i-n diode string |
本文献已被 CNKI 万方数据 等数据库收录! |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|