H型栅SOIMOS作为静电保护器件的维持电压的研究(英文)

对绝缘体上硅工艺来说,静电保护可靠性是一个关键且具有挑战性的问题。着重于研究H型栅SOIMOS的维持电压,通过实验发现此器件的维持电压与栅宽紧密联系。结合TCAD仿真解释了器件的工作机理,通过建立集约模型并由HSPICE仿真,揭示了体电阻与维持电压之间的关系。     

An improved analytical model for the electric field distribution in an RF-LDMOST structure

This paper presents an improved analytical model for an RF-LDMOST structure based on the 2D Poisson equation.The derived model indicates the influence of high doped shallow drift and low doping concentration p epitaxial layer on the electric field distribution.In particular,the importance of the thickness of the p epitaxial layer for electric field distributions in RF-LDMOST are shown through MATLAB analytical results based on the model.Then ISE TCAD simulations and experiments are processed and their re...     

Investigation of the polysilicon p-i-n diode and diode string as a process compatible and portable ESD protection device

正The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced technologies as an electrostatic-discharge(ESD) protection device.This paper presents the reverse breakdown,current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes.To evaluate the ESD robustness,the forward and reverse TLPⅠ-Ⅴcharacteristics were measured.The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally,to explain the effects of the device parameters,we analyze and discuss the inherent properties of polysilicon p-i-n diodes.     

RF LDMOS功率器件研制

基于ISE TCAD模拟软件对RF LDMOS器件的工艺流程和器件结构进行了优化设计,采用带栅极金属总线的版图结构降低栅电阻,同时简化了LDMOS器件的封装设计.通过实际流片和测试分析,重点讨论了漂移区注入剂量和漂移区长度对LDMOS器件的转移特性、击穿特性、截止频率及最大振荡频率的影响.测试结果表明该器件的阈值电压为1.8 V,击穿电压可达70 V,截止频率和最大振荡频率分别为9 GHz和12.6 GHz,并可提供0.7 W/mm的输出功率密度.     

郑州市郑东新区“三个统筹”护航复学师生用餐安全

随着疫情防控取得阶段性成果,复工基本达产,社会普遍关注的全面复学工作逐步进行。为守好校园食品安全防线,保障各类学校顺利开学,河南省郑州市郑东新区市场监督管理局多措并举,全方位、全流程闭环管理,守护广大师生用餐安全。加强组织领导和责任落实,统筹好疫情防控和食品安全。党工委、管委会主要领导亲自安排部署复学工作,组建“五员专班”,做好复学联防联控。     

寻根故里情义深 放心餐饮迎亲人——郑州市市场监管局为食品安全保驾护航

正4月4日,郑州市市场监管局局长李建霞等领导到郑东新区督导己亥年黄帝故里拜祖大典、第十三届中国(河南)国际投资洽谈会等重大活动前食品安全保障工作。郑东新区食安办主任、新区食药监局局长卢高义等陪同。检查指导组先后郑东新区辖的福缘酒店、会展中心、大河锦悦酒     

应用型本科“控制工程基础”教学改革与实践

"控制工程基础"是应用型本科测控技术与仪器专业的一门专业基础课。分析该课程教学中存在的教学方法单一、教学内容不完善等问题,提出了解决对策和课程教学改革的方向。从人才培养模式改进、教学内容整合优化、教学方法多样性、课程组队伍建设等方面,进行课程教学改革。教学实践表明,这些措施有利于提高课程教学质量、增强学生就业竞争力以及科研能力。     

一个基于BSIM3的LDMOS大信号模型

提出了一个基于BSIM3的LDMOS大信号模型.LDMOS晶体管分为本征MOS晶体管和漂移区电阻两部分,本征MOS晶体管采用BSIM3模型,漂移区电阻采用一个随栅漏电压变化的电阻模型.根据ISE仿真结果,可以得到漂移区电阻模型.模型考虑自加热效应后,经过参数提取,模拟数据可以很好地与实际器件的测试数据相吻合,说明模型可用于LDMOS功率器件的电路仿真.     

测量大功率LDMOS晶体管特性的TRL校准方法研究

The impedance and output power measurements of LDMOS transistors are always a problem due to their low impedance and lead widths.An improved thru-reflect-line(TRL) calibration algorithm for measuring the characteristics of L-band high power LDMOS transistors is presented.According to the TRL algorithm,the individual two-port S parameters of each fixture half can be obtained.By de-embedding these S parameters of the test fixture,an accurate calibration can be made.The improved TRL calibration algorithm is successfully utilized to measure the characteristics of an L-band LDMOS transistor with a 90 mm gate width.The impedance of the transistor is obtained,and output power at 1 dB compression point can reach as much as 109.4 W at 1.2 GHz, achieving 1.2 W/mm power density.From the results,it is seen that the presented TRL calibration algorithm works well.     

一种针对RF-LDMOST结构改进的解析模型

本文提出一种基于2D泊松方程,针对RF-LDMOST结构改进的解析模型。借助此模型研究了RF-LDMOST电场分布与高掺杂的浅漂移区和低浓度p型外延层之间的关系,能清楚地从解析角度阐明p外延层厚度对电场分布的影响。ISE TCAD仿真和实验结果与解析结果吻合较好。此模型对于RF-LDMOST的理解和设计有一定价值。