一种8-b 180KSPS的带有新颖的时域比较器且有效位数7.97的差分逐次逼近模数转换器

This paper presents a differential successive approximation register analog-to-digital converter (SAR ADC) with a novel time-domain comparator design for wireless sensor networks. The prototype chip has been implemented in the UMC 0.18-μ m 1P6M CMOS process. The proposed ADC achieves a peak ENOB of 7.98 at an input frequency of 39.7 kHz and sampling rate of 180 kHz. With the Nyquist input frequency, 68.49-dB SFDR, 7.97-ENOB is achieved. A simple quadrate layout is adopted to ease the routing complexity of the common-centroid symmetry layout. The ADC maintains a maximum differential nonlinearity of less than 0.08 LSB and integral nonlinearity less than 0.34 LSB by this type of layout.     

应用于人工关节无线监控系统的低功耗循环式ADC设计

This paper presents a low power cyclic analog-to-digital convertor （ADC） design for a wireless monitoring system for orthopedic implants. A two-stage cyclic structure including a single to differential converter, two multiplying DAC functional blocks （MDACs） and some comparators is adopted, which brings moderate speed and moderate resolution with low power consumption. The MDAC is implemented with the common switched capacitor method. The 1.5-bit stage greatly simplifies the design of the comparator. The operational amplifier is carefully op- timized both in schematic and layout for low power and offset. The prototype chip has been fabricated in a United Microelectronics Corporation （UMC） 0.18-μm 1P6M CMOS process. The core of the ADC occupies only 0.12 mm2. With a 304.7-Hz input and 4-kHz sampling rate, the measured peak SNDR and SFDR are 47.1 dB and 57.8 dBc respectively and its DNL and INL are 0.27 LSB and 0.3 LSB, respectively. The power consumption of the ADC is only 12.5 μW in normal working mode and less than 150 nW in sleep mode.     

A passive UHF RFID tag chip with a dual-resolution temperature sensor in a 0.18μm standard CMOS process

This paper presents a passive EPC Gen-2 UHF RFID tag chip with a dual-resolution temperature sensor. The chip tag integrates a temperature sensor,an RF/analog front-end circuit,an NVM memory and a digital baseband in a standard CMOS process.The sensor with a low power sigma-delta(ΣΔ) ADC is designed to operate in low and high resolution modes.It can not only achieve the target accuracy but also reduce the power consumption and the sensing time.A CMOS-only RF rectifier and a single-poly non-volatile memory(NVM) are designed to realize a low cost tag chip.The 192-bit-N VM tag chip with an area of 1 mm~2 is implemented in a 0.18-μm standard CMOS process.The sensitivity of the tag is -10.7 dBm/-8.4 dBm when the sensor is disabled/enabled.It achieves a maximum reading/sensing distance of 4 m/3.1 m at 2 W EIRP.The inaccuracy of the sensor is -0.6℃/0.5℃(-1.0℃/1.2℃) in the operating range from 5 to 15℃in high resolution mode(-30 to 50℃in low resolution mode).The resolution of the sensor achieves 0.02℃(0.18℃) in high(low) resolution mode.     

A 2.5-V 56-mW baseband chain in a multistandard TV tuner for mobile and multimedia applications

This paper presents post-layout simulated results of an analog baseband chain for mobile and multimedia applications in a 0.13-μm SiGe BiCMOS process.A programmable 7th-order Chebyshev low pass filter with a calibration circuit is used in the analog baseband chain,and the programmable bandwidth is 1.8/2.5/3/3.5/4 MHz with an attenuation of 26/62 dB at offsets of 1.25/4 MHz.The baseband programmable gain amplifier can achieve a linear 40-dB gain range with 0.5-dB steps.Design trade-offs are carefully considered in designing the baseband circuit,and an automatic calibration circuit is used to achieve the bandwidth accuracy of 2%.A DC offset cancellation loop is also introduced to remove the offset from the layout and self-mixing,and the remaining offset voltage is only 1.87 mV.Implemented in a 0.13-μm SiGe technology with a 0.6-mm~2 die size,this baseband achieves IIP3 of 23.16 dBm and dissipates 22.4 mA under a 2.5-V supply.     

Ka波段具有宽锁定范围高注入灵敏度的分频器*

This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into the locking range and output power are proposed. A new method to analyze and optimize the injection sensitivity is presented and a layout technique to reduce the parasitics of the cross-coupled transistors is applied to decrease the frequency shift and the locking range degradation. The circuit is designed in a standard 90-nm CMOS process. The total locking range of the ILFD is 43.8% at 34.5 GHz with an incident power of –3.5 dBm. The divider IC consumes 3.6 mW of power at the supply voltage of 1.2 V. The chip area including the pads is 0.50.5 mm2.     

应用于数控机床系统的低毛刺12位100MHz电流舵DAC设计

A 12-bit,100-MHz CMOS current-steering D/A converter for CNC(computer number control) systems is presented.To reduce the glitch and increase the SFDR(spurious-free dynamic range),a low crosspoint switch driver and a special dummy switch are applied.In addition,a 4-5-3 segmental structure is used to optimize the performance and layout area.After improvement,the biggest glitch energy decreased from 6.7 pVs to 1.7 pVs,the INL decreased from 2 LSB to 0.8 LSB,the SFDR is 78 dB at a 100-MSPS clock rate and 1 MHz output frequency. This DAC can deliver up to 20.8 mA full-scale current into a 50Ωload.The power when operating at full-scale current is 163 mW.The layout area is 1.8×1.8 mm~2 in a standard 0.35-μm CMOS technology.     

Current mode ADC design in a 0.5-μm CMOS process

This paper presents a pipelined current mode analog to digital converter（ADC） designed in a 0.5-μm CMOS process.Adopting the global and local bias scheme,the number of interconnect signal lines is reduced numerously,and the ADC exhibits the advantages of scalability and portability.Without using linear capacitance,this ADC can be implemented in a standard digital CMOS process;thus,it is suitable for applications in the system on one chip（SoC） design as an analogue IP.Simulations show that the proposed current mode ADC can operate in a wide supply range from 3 to 7 V and a wide quantization range from ±64 to ±256 μA.Adopting the histogram testing method,the ADC was tested in a 3.3 V supply voltage/±64 μA quantization range and a 5 V supply voltage/±256 μA quantization range,respectively.The results reveal that this ADC achieves a spurious free dynamic range of 61.46 dB,DNL/INL are-0.005 to ＋0.027 LSB/-0.1 to ＋0.2 LSB,respectively,under a 5 V supply voltage with a digital error correction technique.     

具有增益失配校正的I/Q双通道数模转换器设计

This paper presents a two-channel 12-bit current-steering digital-to-analog converter(DAC) for I and Q signal paths in a wireless transmitter.The proposed DAC has a full-scale output current with an adjusting range of 2 to 10 mA.A gain matching circuit is proposed to reduce gain mismatch between the I and Q channels.The tuning range is±24%of full scale and the minimum resolution is 1/16 LSB.To further improve its dynamic performance, the switch driver and current cell are optimized to minimize glitch energy.The chip has been processed in a standard 0.13μm CMOS technology.Gain mismatch between a 1-channel DAC and a Q-channel DAC is measured to be approximately 0.13%.At 120-MSPS sample rate for 1 MHz sinusoidal signal,the spurious free dynamic range (SFDR) is 75 dB.The total power dissipation is 62 mW and has an active area of 1.08 mm2.     

一款用于数字电视调谐器的高线性度多频带增益可调信道选择滤波器

This paper presents a channel-select filter that employs an active-RC bi-quad structure for TV-tuner application. A design method to optimize the IIP3 of the bi-quad is developed. Multi-band selection and gain adjustment are implemented using switching resistors in the resistor array and capacitors in the capacitor array. Q-factor degradation is compensated by a tuning segmented resistor. A feed-forward OTA with high gain and low third-order distortion is applied in the bi-quad to maximize linearity performance and minimize area by avoiding extra compensation capacitor use. An RC tuning circuit and DC offset cancellation circuit are designed to overcome the process variation and DC offset, respectively. The experimental results yield an in-band IIP3 of more than 31 dBm at 0 dB gain, a 54 dB gain range with 6 dB gain step, and a continuous frequency tuning range from 0.25 to 4 MHz. The in-band ripple is less than 1.4 dB at high gain mode, while the gain error and frequency tuning error are no more than 3.4% and 5%, respectively. The design, which is fabricated in a 0.18 μm CMOS process, consumes 12.6 mW power at a 1.8 V supply and occupies 1.28 mm2.     

A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a dc input and outputs a doubled dc voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pairs generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by spice with TSMC 0.35-μm CMOS technology and operates with a 2.7 V to 3.6 V supply voltage. It has an area of 0.4 mm2; it was designed with a frequency regulation of 1 MHz and internal current mode to reduce power consumption.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.