The Bipolar Field-Effect Transistor: VII. The Unipolar Current Mode for Analog-RF Operation (Two-MOS-Gates on Pure-Base)

This paper reports the DC steady-state current-voltage and conductance-voltage characteristics of a Bipolar Field-Effect Transistor （BiFET） under the unipolar （electron） current mode of operation, with bipolar （electron and hole） charge distributions considered. The model BiFET example presented has two MOS-gates on the two surfaces of a thin pure silicon base layer with electron and hole contacts on both edges of the thin base. The hole contacts on both edges of the thin pure base layer are grounded to give zero hole current. This 1-transistor analog-RF Basic Building Block nMOS amplifier circuit, operated in the unipolar current mode, complements the 1-transistor digital Basic Build Block CMOS voltage inverter circuit, operated in the bipolar-current mode just presented by us.     

欧姆接触金属退火对应力AlGaN/GaN异质结构中电子迁移率的影响

The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas （2DEG） is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors （AlGaN/GaN HFETs）. Current-voltage （I-V） characteristics for ungated AlGaN/GaN heterostructures and capacitance-voltage （C-V） characteristics for AlGaN/GaN HFETs are obtained, and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated. It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50% compared with the electron mobility of Hall measurements. We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.     

硅基二维通道电子倍增器微孔阵列基体形成的光电化学技术研究

A semiconductor PEC etching method is applied to fabricate the n-type silicon deep micropore channel array. In this method, it is important to arrange the direction of the micropore array along the crystal orientation of the Si substrate. Otherwise, serious lateral erosion will happen. The etching process is also relative to the light intensity and HF concentration. 5% HF concentration and 10-15 cm distance between the light source and the silicon wafer are demonstrated to be the best in our experiments. The n-type silicon deep micropore channel array with aperture of 3/2m and aspect ratio of 40-60, whose inner walls are smooth, is finally obtained.     

槽栅MOSHEMT研制与特性分析

An A1GaN/GaN recessed-gate MOSHEMT was fabricated on a sapphire substrate. The device, which has a gate length of 1μm and a source-drain distance of 4μm, exhibits a maximum drain current density of 684mA/mrn at Vgs = 4V with an extrinsic transconductance of 219 mS/mm. This is 24.3% higher than the transconductance of conventional A1GaN/GaN HEMTs. The cut-off frequency and the maximum frequency of oscillation are 9.2 GHz and 14.1 GHz, respectively. Furthermore, the gate leakage current is two orders of magnitude lower than for the conventional Schottky contact device.     

Comparison for the carrier mobility between the III-V nitrides and AIGaAs/GaAs heterostructure field-effect transistors

Using the measured capacitance-voltage curves ofNi/Au Schottky contacts with different areas and the current-voltage characteristics for the A1GaAs/GaAs, A1GaN/A1N/GaN and InoAsA10.szN/A1N/GaN heterostructure field-effect transistors （HFETs） at low drain-source voltage, the two-dimensional electron gas （2DEG） electron mobility for the prepared HFETs was calculated and analyzed. It was found that there is an obvious difference for the variation trend of the mobility curves between the Ⅲ-V nitride HFETs and the A1GaAs/GaAs HFETs. In the III-V nitride HFETs, the variation trend for the curves of the 2DEG electron mobility with the gate bias is closely related to the ratio of the gate length to the drainto-source distance. While the ratio of the gate length to the drainto-source distance has no effect on the variation trend for the curves of the 2DEG electron mobility with the gate bias in the A1GaAs/GaAs HFETs. The reason is attributed to the polarization Coulomb field scattering in the Ⅲ-V nitride HFETs.     

Ternary logic circuit design based on single electron transistors

Based on the I-V characteristics and the function of adjustable threshold voltage of a single electron transistor （SET）, we design the basic ternary logic circuits, which have been simulated by SPICE and their power and transient characteristics have been extensively analyzed. The simulation results indicate that the proposed circuits exhibit a simpler structure, smaller signal delay and lower power.     

Research on Secondary Electron Emission Yield Intellectualized Testing System of Space Materials Based on Kingview and PLC

This paper describes an intellectualized testing system of the secondary electron emission yield of space materials by combining the technology of electronic control and communication. This system is based on Kingview 6.52 and PLC. The system achieves the document multithreading intellectualized control of vacuum obtaining, pulse modulation of electron gun and on-off of all power sources. The application of Kingvlew 6.52 makes the design of system more convenient and improves the control quality. The communication with PLC through serial interface improves the ability of data collection and real-tlme disposing of industry personal computers.     

Mining User Interest in Microblogs with a User-Topic Model

Microblogs have become an important platform for people to publish, transform information and acquire knowledge. This paper focuses on the problem of discovering user interest in microblogs. In this paper, we propose a topic mining model based on Latent Dirichlet Allocation （LDA） named user-topic model. For each user, the interests are divided into two parts by different ways to generate the microblogs： original interest and retweet interest. We represent a Gibbs sampling implementation for inference the parameters of our model, and discover not only user＇s original interest, but also retweet interest. Then we combine original interest and retweet interest to compute interest words for users. Experiments on a dataset of Sina microblogs demonstrate that our model is able to discover user interest effectively and outperforms existing topic models in this task. And we find that original interest and retweet interest are similar and the topics of interest contain user labels. The interest words discovered by our model reflect user labels, but range is much broader.     

Adaptive Method of Velocity Control for Cardiac CT

The image for cardiac CT is blurred because the heart is in motion. Currently, fixed scan velocity for cardiac CT is used and approximate projection can only be achieved due to the non-synchronism between the heartbeat and scan velocity. In order to achieve ideal projection, the control method for selectable scan velocity is proposed according to heartbeat. The velocity varies with the heart beat, temporal resolution and control parameters to achieve a desirable temporal resolution in nonperiodic heartbeat. The selectable scan velocity can provide ideal projection with uniform distribution and the same phases. The simulation result shows that the variable velocity method outperforms the current fixed velocity method.     

SDN-Based Data Offioading for 5G Mobile Networks

The rapid growth of 3G/4G enabled devices such as smartphones and tablets in large numbers has created increased demand formobile data services.Wi-Fi offloading helps satisfy the requirements of data-rich applications and terminals with improved multi-media.Wi-Fi is an essential approach to alleviating mobile data traffic load on a cellular network because it provides extra capaci-ty and improves overall performance.In this paper,we propose an integrated LTE/Wi-Fi architecture with software-defined net-working(SDN)abstraction in mobile backhaul and enhanced components that facilitate the move towards next-generation 5G mo-bile networks.Our proposed architecture enables programmable offloading policies that take into account real-time network condi-tions as well as the status of devices and applications.This mechanism improves overall network performance by deriving real-time policies and steering traffic between cellular and Wi-Fi networks more efficiently.     

The Data Age of Mobile Cellular Network in Germany and China： Policies,Technologies and Markets （Part I）

The UMTS auction in 2000 brought approximately 100 billion DM （Deutsche Mark） for the German National Treasury. T-Mobile （D1-Netz）, Vodafone （D2-Netz）, E-Plus （E1-Netz） and 02 （E2-Netz） have gradually evolved from GSM to full-fledged UMTS operators over the past years. The conglomerate of China Telecom was split twice. China acceded to WTO and promulgated the FITE Provisions. MIIT （Ministry of Industry and Information Technology） became the regulator and China Netcom was incorporated into China Unicorn in 2008. Most recently the layout of 3G future has been reconfirmed by MIIT. Voice service has remained the main source of income in both countries and operators have continued to focus on voice quality and network availability in their respective 2G networks. Because value-added and higher-speed data applications have been gaining market attention, 2.5G and 3G infrastructure has increasingly become the focal network strategy for the operators since the beginning of the new century. Germany has rolled out WCDMA/UMTS services on a large scale in the consumer market, while China has adopted all three 3G standards （TD-SCDMA, WCDMA/UMTS, CDMA2000）, which shall gradually capture a wider 3G subscriber base. The summary shows that the development of the cellular technology and market in Germany and China can be discussed in three distinct historical periods. The conclusion suggests that the case of the cellular technology appears to be consistent with and applicable to a number of arguments widely disputed in economics and management related to technology and innovation, such as dominant design, technology waves/ S-Curve, disruptive technologies, Technology Adoption Life Cycle.     

Stability Analysis of Information Spreading on SNS Based on Refined SEIR Model

Investigating the stability of information spreading over SNS helps to understand the principles inherent in the spreading behavior. This paper explores the mechanisms of information spreading including stifling mechanism, latent mechanism and forgetting mechanism, establishes a refined SEIR model, and builds the corresponding mean-field equations. The methods of the differential dynamics and the next generation matrix are used to calculate the equilibriums and the basic reproductive number, and the asymptotical stability of the network equilibriums are proved theoretically. Simulation experiments are carried out to analyze the effect of the spreading mechanisms on the information spreading process and the results support our conclusions.     

Software Radio——Software Radio： A Review of Design Considerations and Digital Hardware Choices

This paper reviews the requirements for Software Defined Radio （SDR） systems for high-speed wireless applications and compares how well the different technology choices available- from ASICs, FPGAs to digital signal processors （DSPs） and general purpose processors （GPPs） - meet them.     

EEFA： Energy Efficiency Frame Aggregation Scheduling Algorithm for IEEE 802.11n Wireless Network

Packet size is restricted due to the error-prone wireless channel which drops the network energy utilization. Furthermore, the frequent packet retransmissions also lead to energy waste. In order to improve the energy efficiency of wireless networks and save the energy of wireless devices, EEFA （Energy Efficiency Frame Aggregation）, a frame aggregation based energy-efficient scheduling algorithm for IEEE 802.11n wireless network, is proposed. EEFA changes the size of aggregated frame dynamically according to the frame error rate, so as to ensure the data transmission and retransmissions completed during the TXOP and reduce energy consumption of channel contention. NS2 simulation results show that EEFA algorithm achieves better performance than the original frame-aggregation algorithm.     

A Fast Algorithm for Near Field Radiated by Aperture Antennas

A fast algorithm in frequency and time domain is presented for near field radiated by aperture antennas. The convolution formulation is earlier developed to relate the near field to the equivalent magnetic current sources on the aperture in frequency domain, which accelerates the near field＇s calculation via FFT, and Fourier transform pairs have been found on the basis of Plane wave spectrum （PWS） theory and convolution theorem. The algorithm in time domain can be obtained based on the method of frequency domain, which has been proved by the rigorous Electromagnetic theory associated with Fourier transform theory. Numerical results are presented for two antennas to verify the fast algorithm.     

Golay Sequence Based Time-Domain Compensation ot Frequency-Dependent I/Q Imbalance

A time-domain frequency- dependent I/Q imbalance compensation scheme based on Golay complementary sequence for receiver is presented. By utilizing property of Golay sequence, the signal and its conjugate interference （image interference） in preamble are separated by correlation and used to estimate I/Q imbalance parameters. After that, a Least Square （LS） estimation of compensation filter is obtained and adopted in the compensation structure. Two applications of the presented algorithm are discussed： we could either estimate the channel along with I/Q imbalance or estimate the imbalance parameter only to maintain a lower cost. Both applications are testified by simulation. The results show that the image interference is significantly suppressed even in poor SNR condition, and the computation cost of the algorithms is low.     

应用于生物医疗的0.6-V 8.3-ENOB 异步时序逐次逼近型模数转换器

A microwatt asynchronous successive approximation register （SAR） analog-to-digital converter （ADC） is presented. The supply voltage of the SAR ADC is decreased to 0.6 V to fit the low voltage and low power require- ments of biomedical systems. The tail capacitor of the DAC array is reused for least significant bit conversion to decrease the total DAC capacitance thus reducing the power. Asynchronous control logic avoids the high frequency clock generator and further reduces the power consumption. The prototype ADC is fabricated with a standard 0.18 μm CMOS technology. Experimental results show that it achieves an ENOB of 8.3 bit at a 300-kS/s sampling rate. Very low power consumption of 3.04 μW is achieved, resulting in a figure of merit of 32 fJ/conv.-step.     

Design of a 16 gray scales 320×240 pixels OLED-on-silicon driving circuit

A 320×240 pixel organic-light-emitfing-diode-on-silicon （OLEDoS） driving circuit is implemented using the standard 0.5μm CMOS process of CSMC. It gives 16 gray scales with integrated 4 bit D/A converters. A three- transistor voltage-programmed OLED pixel driver is proposed, which can realize the very small current driving required for the OLEDoS microdisplay. Both the D/A converter and the pixel driver are implemented with pMOS devices. The pass-transistor and capacitance in the OLED pixel driver can be used to sample the output of the D/A converter. An additional pMOS is added to OLED pixel driver, which is used to control the D/A converter operating only when one row is on. This can reduce the circuit＇s power consumption. This driving circuit can work properly in a frame frequency of 50 Hz, and the final layout of this circuit is given. The pixel area is 28.4 × 28.4μm^2 and the display area is 10.7 × 8.0 mm^2 （the diagonal is about 13 mm）. The measured pixel gray scale voltage shows that the function of the driver circuit is correct, and the power consumption of the chip is about 350 mW.     

基于双功率时钟的DTCTGAL电路设计及其应用

By research on the switch-signal theory for multiple-valued logic circuits, the theory of three essential elements and the principle of adiabatic circuits, a design scheme for a double power clock ternary clocked transmission gate adiabatic logic （DTCTGAL） circuit is presented. The energy injection and recovery can be conducted by the bootstrapped NMOSFET, which makes the circuit maintain the characteristics of energy recovery as well as multiple-valued input and output. An XOR/XNOR circuit based on DTCTGAL is also presented using this design scheme. Finally, using the parameters of a TSMC 0.25μm CMOS device, PSPICE simulation results indicate that the proposed circuits have correct logic and significant low power characteristics.     

纳米硅/单晶硅异质结MAGFET制作及特性

A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The experimental results show that when VDS = -7.0 V, the magnetic sensitivity of the single nc-Si/c-Si heterojunction magnetic metal oxide semiconductor field effect transistor （MAGFET） with an L ： W ratio of 2 ： 1 is 21.26 mV/T, and that with an L ： W ratio of 4 ： 1 is 13.88 mV/T. When the outputs of double nc-Si/c-Si heterojunction MAGFETs with an L ： W ratio of 4 ： 1 are in series, their magnetic sensitivity is 22.74 mV/T, which is an improvement of about 64% compared with that of a single nc-Si/c-Si heterojunction MAGFET.