无线传感器网络路由中的能量预测及算法实现

基于无线传感器网络中路由协议高效合理利用能量的要求,提出一种基于剩余能量预测的地理位置路由(EPGR,energy prediction and geographical routing)算法。算法通过建立传感器网络节点运作模型,及相邻节点剩余能量预测机制,优化路由选择。仿真和分析表明,EPGR算法能够有效地优化数据传输路径,均衡传感器网络节点的能量消耗,延长网络寿命。     

一种基于WSN时变性与节点剩余能量均衡的机会路由算法

 为了解决数据报文在无线传感网络中动态路由以及网络内各节点剩余能量均衡问题,该文提出了一种机会路由算法。首先,利用热力学第2定律描述数据报文在无线传感器网络中动态路由的传输过程,其中,为了表征网络内各节点状态的时变性以及剩余能量,提出了机会熵模型;其次,以机会熵模型作为选择下一跳节点的理论依据,并结合蚁群优化(ACO)算法,设计并实现了考虑网络中各节点时变性与剩余能量均衡的机会路由算法(ACO for Time Dependent Opportunistic-routing Protocol, ATDOP),使得数据报文在转发过程时,能够有效地选择下一跳节点,从而使网络内各节点的通信资源和能量资源达到负载均衡。最后,通过实验证明,相对于已有的机会路由协议,ATDOP具有报文成功传输率高、网络有效吞吐量大以及网络工作寿命长等优点。     

基于博弈理论的无线传感器网络分布式节能路由算法

为了有效解决无线传感器网络路由节能问题,该文提出适合无线传感器网络的节能路由算法。在引入博弈理论概念建立网络模型的基础上,通过对于以往传感器网络簇首选择方法的研究,设计了一种基于博弈论的,兼顾节点剩余能量及簇首分布的节能路由DEER(DistributedEnergy-EconomicalRouting),大大节省了分布式决策网络协议的能量损耗。仿真证明了该方法在无线传感器网络中,能够有效地平衡网络负载,节省节点能量,延长网络寿命。     

面向智慧园区的WSN路由优化算法

为解决智慧园区中无线传感器网络(WSN)的能耗不均衡问题,构建了路由代价函数,并提出了一种新的能耗均衡路由算法.该算法结合智慧园区中无线传感器网络的特点,综合考虑节点地理位置和剩余能量来构建路由代价函数.传感器节点通过选择其邻居节点中路由代价最小的节点进行数据转发.仿真结果表明,该算法可以有效节约网络能耗,同时延长了网络的生命周期.     

一种射频能量捕获网络移动能量源均衡化充电策略

为解决传统电池供电传感器网络存在的电池不易更换、节点能量容易耗尽等问题,射频能量捕获技术已逐步应用于无线可充电传感器网络中.由于不同位置传感器节点的工作负荷不同,捕获能量也有差异,实现节点能量的均衡化分布可以有效地提高节点的存活率.考虑射频能量源移动充电的场景,在已知节点位置信息的条件下,设计合理均衡的路由方案和充电算法.首先将区域基于蜂窝六边形网格划分,分别对网格和节点分层,提出逐层传输的均衡式路由策略,然后给出无线充电小车的移动路径,对相邻两层内节点剩余能量的方差最小化问题建模,由内层向外层依次确定能量源在各停留点的充电时间.仿真结果表明,相比已有的均衡化充电方法,该策略可以明显提高节点剩余能量的均衡性,从而延长网络的生命周期.     

具有能量和位置意识基于ACO的WSN路由算法

通过融合传感器节点的剩余能量和地理位置信息,设计一种具有传感器节点能量和地理位置意识的基于蚁群优化方法的无线传感器网络路由算法(ELACO);针对路由空洞现象,提出一种路由回退机制,提高了路由搜索成功率.仿真结果表明,ELACO算法具有很高的路由查寻成功率,能够更好地均衡传感器节点能量消耗,从而延长网络使用寿命.     

一种提高无线传感器网络鲁棒性的方法

传感器网络节点是能量受限的节点,节点的能耗以及路由选择是影响传感器网络鲁棒性的重要因素之一。本文提出一种基于能耗预测来确定路由选择的方法,使得剩余能量较低、预测的传输能力较差的节点避开路由传输,避免传输失败引起的网络瘫痪,增强无线传感器网络的鲁棒性。     

基于剩余能量和节点度的多跳分簇算法的研究

LEACH协议是第一个在无线传感器网络中提出的分簇路由协议,由于其簇头产生的随机性,产生了一些不足,因此为了均衡整个网络的能耗,延长WSN的生命周期,提出了基于节点剩余能量和节点度的多跳分簇路由协议。其基本思想是在LEACH中加入门限,让剩余能量高且节点度高的节点优先成为簇头,簇头之间采用多跳路由传输机制。仿真结果表明,该协议能够有效地延长网络的生命期。     

无线传感器网络能量均衡分簇路由协议

LEACH是无线传感器网络(Wireless Sensor Network,WSN)中一种经典的分层式路由协议,在此基础上通过对LEACH成簇算法及簇间路由的改进,提出了一种新的均衡能量消耗分簇路由协议。该协议在无线传感器网络成簇过程中充分考虑了传感器节点的能量状态,同时簇首向基站的通信采用基于能量的簇间路由。理论分析及仿真结果表明,改进的协议能够均衡传感器节点的能量消耗,有效地延长网络寿命。     

k跳受限泛洪的能量平衡组播路由算法

组播路由算法(Energy-Balanced Multicast Routing,EBMR)把无线传感器网络节点的剩余能量作为建立组播路由的重要因子,在不引入过长路径的同时优先选择剩余能量高的节点作为组播数据转发节点,构建组播能量平衡树(EB-Tree),从网络能量均衡消耗的角度来延长了无线传感器网络的生存时间.针对EBMR算法路由开销较大的问题,提出了k跳受限泛洪的能量平衡组播路由算法k-EBMR,控制组播路由报文在k跳范围内传播,并且研究了影响算法性能的关键因子的选取.仿真实验表明,与EBMR算法相比,k-EBMR算法较大程度上降低了路由控制报文的传输,提高了节点能量有效使用性,进一步延长了网络生存时间.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.