千瓦级连续激光二极管面阵及微沟道冷却组件

千瓦级连续激光二极管面阵由30个40W的808nm连续激光二极管条组成,按要求排列成5×6矩阵,发光孔径12mm×70mm。每个激光二极管条安装在微沟道冷却封装组件上,依靠高压冷却水通过微沟道维持连续运行。面阵的30个二极管条的电路串联,冷却水道并联,恒流电流50A时,发射连续1060W,808nm波长的激光,平均功率密度126W/cm2。5个K型热电偶安装在面阵不同位置测量激光二极管底部附近硅热沉的温度随耗散热功率的增加,面阵整体热阻的测量值为0.009℃/W。千瓦级连续面阵可用于抽运大功率固体激光器,也可用于材料表面热处理。     

连续40 W 808 nm量子阱线阵二极管激光封装技术

研究了高功率二极管激光 (LD)封装中的铟焊料蒸镀工艺和回流焊工艺对芯片焊接状态的影响。在数值模拟和实验研究的基础上 ,优化了冷却器结构设计 ,研制出具有热阻低、压降小的铜微通道液体冷却器 ,可以满足热耗散功率大于 6 0W的二极管激光器散热冷却需要。通过封装实验得到输出功率 40W ,波长 80 8nm ,谱线半高宽<2nm ,电光效率近 40 %的连续线阵二极管激光器。用该激光器进行了抽运Nd∶YAG固体激光实验 ,在抽运功率为 40W时 ,获得 11 8W单横模固体激光输出 ,光 光效率约为 30 %。     

高功率线阵半导体激光器光纤耦合实验研究

通过分析高功率线阵半导体激光器(DL)的激光输出特性,设计了一套光束变换装置,可将10 mm宽的线阵DL激光耦合进单根光纤中.变换过程如下:首先用微柱透镜对DL的快轴方向准直,然后利用微台阶反射镜,通过提高慢轴方向光束质量而降低快轴方向光束质量的方法,使得线阵DL两个方向的光束质量相近,从而可以汇聚成一接近圆形的光斑,再用聚焦透镜耦合进单根光纤中.在实验中实现了将输出功率为42 W的连续线阵DL的输出激光耦合进一根芯径为1 mm,数值孔径NA=0.38的光纤中,光纤输出激光功率为连续25 W,整个光束变换系统的耦合效率为59.5%.     

半导体激光器、集成光学激光器

0103628高占空比、高功率线阵二极管激光器封装技术[刊]/唐淳//强激光与粒子束.—2000,12(5).—544～546(L) 0103629915-980nm 应变量子阱激光器新进展[刊]/徐遵图//功能材料与器件学报.—2000,6(3).—293～296(K)报道了915～980nm 半导体激光器的最新进展,宽条激光器输出功率为0.2～2.0W,最大输出功率大于5W;基横模脊形波导半导体激光器输出功率达400mW,水平和垂直方向远场发射角分别为7°和23°,组合件输出功率大于150mW。     

在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用

从理论上计算了厚度为 110 nm的 W0 .95 Ni0 .0 5 金属薄膜应变条在 In Ga As P/ In P双异质结构中形成的应力场分布 ,及由应力场分布引起的折射率变化 .在 W0 .95 Ni0 .0 5 金属薄膜应变条下半导体中 0 .2— 2μm深度范围内 ,由应变引起条形波导轴中央的介电常数 ε相应增加 2 .3× 10 - 1— 2 .2× 10 - 2 (2 μm应变条宽 )和 1.2× 10 - 1— 4.1× 10 - 2(4μm应变条宽 ) .同时 ,测量了由 W0 .95 Ni0 .0 5 金属薄膜应变条所形成的 In Ga As P/ In P双异质结光弹效应波导结构导波的近场光模分布 .从理论计算和实验结果两方面证实了 In Ga As P/ In P     

“操纵杆”式触摸开关

Genex公司推出 DIP型和表面安装型的“操纵杆”式触摸开关。这种开关的尺寸为1 2 mm× 1 2 mm× 6.5 mm,采用了与操纵杆类似的开关装置 ,可上移、下移、左移、右移或置于中央。表面安装型的开关能经受 5 0 0 gf的操作力(中央推力 ;其它方向为 2 5 0 gf)。中央推动操作的位移为 1 mm(± 0 .2 mm) ,而操纵杆的移动角度为 8°(± 2°)。该型号产品的额定寿命为 1 0 0 ,0 0 0次。DIP型的“操纵杆”式触摸开关能经受35 0 gf的操作力 (中央推力 ;其它方向为2 5 0 gf)。操纵杆的移动角度为 5°(± 1°) ,而中央推动操作的位移为 0 .2 5 mm(± 0 …     

科技简讯

恩耐激光推出高亮度975nm单管半导体激光器世界领先的高功率半导体激光器制造商恩耐激光公司(nLightPhotonics Corp.)最近推出高亮度5W连续波975nm单管半导体激光器,采用标准的C-M ount和H H L封装。该半导体激光器是掺铒和掺钇光纤激光器和光纤放大器的理想泵浦源。此外,它也广泛应用于医疗和工业领域。发光区域宽度为200μm的5W975nm半导体激光器,工作电流为5.5A,工作电压为1.7V,快轴发散角(FW H M)小于38°和慢轴发散角(FW H M)小于10°。该公司能同时提供快轴准直透镜,其透过率高于95%,准直后的发散角(FW H M)小于2°。恩耐激…     

104 W全固态532 nm Nd∶YAG激光器

我们采用单Nd∶YAG棒平凹谐振腔设计及临界相位匹配的KTP晶体 ,利用内腔倍频技术获得了平均功率为 10 4W的绿光输出。实验装置如图 1。实验采用美国CEO公司生产的半导体激光器组件 ,它由 80个 2 0W二极管激光器组成 ,按照五角形等间距侧面抽运Nd∶YAG棒 ,其总抽运功率为 16 0 0W ,激光介质的尺寸为 6 36mm× 146mm ,侧面打毛 ,两端磨成平面 ,镀 10 6 4nm增透膜。倍频晶体采用Ⅱ类相位匹配的KTP晶体 ( =2 3 6° ;θ=90°) ,其尺寸为 7mm× 7mm× 8mm ,两面镀 10 6 4nm和 5 32nm增透膜 ;考虑到高功率下激光介质Nd∶YAG棒的热致…     

大功率半导体激光器模块散热结构的数值优化

考虑大功率半导体激光bar外延结构中GaAs衬底热阻导致p、n面散热的非对称性,利用商用有限元软件Ansys对目前常用的DPSSL侧泵浦源亚封装子模块的散热性能进行了分析和结构优化,并根据优化结构实际制备出3 bar激光线阵泵浦源,其连续输出功率超过120 W,中心波长为807.7 nm,光谱宽度(FWHM)为2.8 nm.该数值分析结果对根据实际需要设计、封装出不同结构尺寸的大功率半导体激光泵浦源模块具有现实的指导意义.     

高光束质量大功率半导体激光阵列的微通道热沉

针对现有高光束质量大功率半导体激光阵列内部发光单元条宽、填充因子不断减小,腔长不断增加的发展趋势所带来的热源分布及长度变化影响器件热阻的问题,利用分离热源边界条件结合商用计算流体力学(CFD)软件FLUENT进行数值计算,获得微通道热沉热阻随阵列器件发光单元条宽、空间位置变化关系以及不同阵列腔长对应的微通道优化长度.根据优化参数制备获得尢氧铜微通道热沉,并对宽1 cm,腔长1 mm,条宽100μm,填充因子为25%的半导体激光阵列进行散热能力测试,冷却器外形尺寸27 mm×11 mm×1.5 mm.微通道热沉热阻0.34 K/W,能够满足半导体激光阵列器件高功率集成输出的散热需求.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.