一种带有Trimming电路的Gm-C带通滤波器的设计

针对红外接收芯片中带通滤波器的功能要求,在G_m-C二阶带通滤波器架构的基础上,设计了引入非平衡差分对的跨导运算放大器、驱动外部负载的缓冲器、修调电路以及外部中心频率调整电路。该G_m-C二阶带通滤波器的中心频率、通带增益、带宽均正交可调。电路采用0.25μm标准CMOS工艺设计,然后使用Hspice软件对整体电路进行了仿真验证。仿真结果显示:该带通滤波器的中心频率为36.3 kHz,带通增益为23.2 dB,带宽为5.8 kHz,品质因数为5.3。该电路结构简单、容易集成,可广泛应用于红外遥控接收系统中。     

基于CMOS的OTA—C带通滤波器设计

针对红外接收芯片对带通滤波器参数可调的要求,提出了一种二阶带通连续时间滤波器,该滤波器的中心频率、带宽和通带增益均可调,并可在0.5μmn阱CMOS工艺下实现集成。设计过程是基于现有的理论以及实际要求的综合考虑,采用了合理的电路结构,在cadence环境下仿真并得出了适用的结论.     

用于红外接收芯片的OTA-C带通滤波器

设计了一种二阶带通连续时间滤波器(BPF),采用0.5μm n阱CMOS工艺设计,在Cadence Spectre环境下进行了电路仿真。结果表明:该滤波器的中心频率38kHz,带宽6kHz,通带增益16dB且均匀可调,可用于红外接收芯片中。     

一种基于开关电容的可配置多模滤波器

设计了一种基于开关电容的可配置多模滤波器,由模拟信号处理模块、数字控制模块和参考电压电流源组成;通过数字控制模块配置滤波器工作在旁路、低通、带通、自适应工作状态,同时实现低通滤波器截止频率和带通滤波器中心频率可调;自适应滤波器截止频率和中心频率能准确跟随输入信号主频率.整个电路基于SMIC 0.18μm CMOS工艺实...     

一种新颖的电流模式双二阶OTA-C滤波器设计

提出了一种新颖OTA-C实现的电流模式双二阶通用滤波器。该滤波器具有三个输入端和一个输出端,通过选择不同的输入信号即能实现低通、高通、带通、带阻和全通五种滤波器功能。电路结构简单、中心频率和品质因数可调,灵敏度低,均为0.5。理论分析和SPICE仿真表明所提电路方案正确可行。     

基于LTC1068-200的低频带通滤波器设计

在蓄电池性能监测过程中,接收的信号都是比较微弱的低频信号,而且为了得到更多的信息,往往向蓄电池施加多个频率的激励。因此,设计带通滤波器以提高抗干扰能力,而且中心频率要可调。开关电容滤波器可实现低通、高通、带通和带阻滤波功能,而且中心频率可调节,文中采用了LTC1068-200开关电容滤波器集成模块进行电路设计,时钟频率由CD4046锁相环控制。仿真结果表明本文设计的滤波器通带宽度可以达到5 Hz,中心频率从10 Hz到1 kHz可调节,满足实际需要。     

对称L型缺陷微带结构可调带通滤波器研究

设计了一种由对称L型缺陷微带结构实现的新型频率可调带通滤波器,并给出了相应的等效电路;对具有该结构的单频带带通滤波器的S参数频响特性进行了仿真与分析,并计算了耦合系数;依据上述结构设计制作了一种可调谐的双频带带通滤波器,并对其谐振频率的可调性进行了分析。结果表明:所制滤波器的谐振频率分别为2.4 GHz和3.5 GHz,相对带宽分别为4.63%和4.95%,有效电路尺寸仅为26.0 mm×1.2 mm。该L型缺陷微带结构带通滤波器具有结构简单紧凑、尺寸小、频率选择性好和谐振频率独立可调等优点。     

基于MO-OTAS和CCCⅡ电流模式通用滤波器

提出一种采用跨导运算放大器MO-OTAS与电流传送器CCCⅡ相结合构成的电流模式多功能滤波器,该电路由一个CCCⅡ器件、二个MO-OTAS和三个接地电容所组成.在输入端加入信号并将其与相应的输出端进行适当的组合,即可得到低通、高通、带通、带阻和全通五种二阶滤波器功能.所提出的电路中心频率可调范围大,中心频率ω0和品质因数Q独立可调,无源元件全部接地,利于集成,产生的电路具有很低的灵敏度.理论分析和Hspice计算机仿真表明,提出的电路方案正确.     

基于交指结构的可调带通滤波器的设计

依据微带线的基本原理和电压调谐变容二极管的特性,结合微带交指滤波器的设计方法,提出一种基于交指结构的中心频率可调带通滤波器。设计了一种中心频率可调范围1.23～2.23GHz、带内插损小于4dB、带内平坦度优于0.5dB、相对带宽6.5%～4.5%的可调带通滤波器。经过ADS软件的仿真验证,证实了设计的有效性。     

高增益差分无源N通道带通滤波器的设计

针对传统无源N通道滤波器无增益的问题,采用高增益隐式电容叠加电路的方法,设计了一种高增益差分无源N通道带通滤波器。同时,通过底板电容开关电路来稳定开关的电阻和提高滤波器的线性度,采用差分结构消除偶次谐波对N通道带通滤波器输出信号的影响。采用TSMC 40 nm CMOS工艺,后端仿真结果表明：当通道数为4,电源电压为1.1 V时,滤波器的中心频率可调范围为1.6～2.4 GHz,在频率可调范围内带宽为3.4～7 MHz,噪声系数(NF)小于4.6 dB。当中心频率f_s=2 GHz时,电压增益达到26 dB,输入三阶交调点(IIP3)大于22.8 dBm。与同类型的N通道带通滤波器相比,所设计的无源N通道带通滤波器增益较高且线性度较好,可应用于射频接收机前端电路。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.