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1.
This paper describes a low-pass reconfigurable baseband filter for GSM,TD-SCDMA and WCDMA multi-mode transmitters.To comply with 3GPP emission mask and limit TX leakage at the RX band,the out-of -band noise performance is optimized.Due to the distortion caused by the subthreshold leakage current of the switches used in capacitor array,a capacitor bypass technique is proposed to improve the filter’s linearity.An automatic frequency tuning circuit is adopted to compensate the cut-off frequency variation.Simulation results show that the filter achieves an in-band input-referred third-order intercept point(IIP3) of 47 dBm at 1.2-V power supply and the out-of-band noise can meet TX SAW-less requirement for WCDMA & TD-SCDMA.The baseband filter incorporates -40 to 0 dB programmable gain control that is accurately variable in 0.5 dB steps.The filter’s cut-off frequency can be reconfigured for GSM/TD-SCDMAAVCDMA multi-mode transmitter.The implemented baseband filter draws 3.6 mA from a 1.2-V supply in a 0.13μm CMOS process.  相似文献   

2.
This paper presents a CMOS G_m-C complex filter for a low-IF receiver of the IEEE802.15.4 standard.A pseudo differential OTA with reconfigurable common mode feedback and common mode feed-forward is proposed as well as the frequency tuning method based on a relaxation oscillator.A detailed analysis of non-ideality of the OTA and the frequency tuning method is elaborated.The analysis and measurement results have shown that the center frequency of the complex filter could be tuned accurately.The chip was fabricated in a standard 0.35μm CMOS process,with a single 3.3 V power supply.The filter consumes 2.1 mA current,has a measured in-band group delay ripple of less than 0.16μs and an IRR larger than 28 dB at 2 MHz apart,which could meet the requirements of the IEEE802.15.4 standard.  相似文献   

3.
A fifth/seventh order dual-mode OTA-C complex filter for global navigation satellite system receivers is implemented in a 0.18μm CMOS process.This filter can be configured as the narrow mode of a 4.4 MHz bandwidth center at 4.1 MHz or the wide mode of a 22 MHz bandwidth center at 15.42 MHz.A fully differential OTA with source degeneration is used to provide sufficient linearity.Furthermore,a ring CCO based frequency tuning scheme is proposed to reduce frequency variation.The measured results show that in narrow-band mode the image rejection ratio(IMRR)is 35 dB,the filter dissipates 0.8 mA from the 1.8 V power supply,and the out-of-band rejection is 50 dB at 6 MHz offset.In wide-band mode,IMRR is 28 dB and the filter dissipates 3.2 mA.The frequency tuning error is less than±2%.  相似文献   

4.
This paper presents a channel-select filter that employs an active-RC bi-quad structure for TV-tuner application. A design method to optimize the IIP3 of the bi-quad is developed. Multi-band selection and gain adjustment are implemented using switching resistors in the resistor array and capacitors in the capacitor array. Q-factor degradation is compensated by a tuning segmented resistor. A feed-forward OTA with high gain and low third-order distortion is applied in the bi-quad to maximize linearity performance and minimize area by avoiding extra compensation capacitor use. An RC tuning circuit and DC offset cancellation circuit are designed to overcome the process variation and DC offset, respectively. The experimental results yield an in-band IIP3 of more than 31 dBm at 0 dB gain, a 54 dB gain range with 6 dB gain step, and a continuous frequency tuning range from 0.25 to 4 MHz. The in-band ripple is less than 1.4 dB at high gain mode, while the gain error and frequency tuning error are no more than 3.4% and 5%, respectively. The design, which is fabricated in a 0.18 μm CMOS process, consumes 12.6 mW power at a 1.8 V supply and occupies 1.28 mm2.  相似文献   

5.
A reconfigurable complex band-pass (CBP)/low-pass (LP) active-RC filter with a noise-shaping technique for wireless receivers is presented. Its bandwidth is reconfigurable among 500 kHz, 1 MHz and 4 MHz in LP mode and 1 MHz, 2 MHz and 8 MHz in CBP mode with 3 MHz center frequency. The Op-Amps used in the filter are realized in cell arrays in order to obtain scalable power consumption among the different operation modes. Furthermore, the filter can be configured into the 1st order, 2nd order or 3rd order mode, thus achieving a flexible filtering property. The noise-shaping technique is introduced to suppress the flicker noise contribution. The filter has been implemented in 180 nm CMOS and consumes less than 3 mA in the 3rd 8 MHz-bandwidth CBP mode. The spot noise at 100 Hz can be reduced by 14.4 dB at most with the introduced noise-shaping technique.  相似文献   

6.
An analog/digital reconfigurable automatic gain control(AGC) circuit with a novel DC offset cancellation circuit for a direct-conversion receiver is presented.The AGC is analog/digital reconfigurable in order to be compatible with different baseband chips.What’s more,a novel DC offset cancellation(DCOC) circuit with an HPCF(high pass cutoff frequency) less than 10 kHz is proposed.The AGC is fabricated by a 0.18μm CMOS process.Under analog control mode,the AGC achieves a 70 dB dynamic range with a 3 dB-bandwidth larger than 60 MHz.Under digital control mode,through a 5-bit digital control word,the AGC shows a 64 dB gain control range by 2 dB each step with a gain error of less than 0.3 dB.The DC offset cancellation circuits can suppress the output DC offset voltage to be less than 1.5 mV,while the offset voltage of 40 mV is introduced into the input.The overall power consumption is less than 3.5 mA,and the die area is 800×300μm~2.  相似文献   

7.
This paper presents a 4th-order reconfigurable analog baseband filter for software-defined radios.The design exploits an active-RC low pass filter(LPF) structure with digital assistant,which is flexible for tunability of filter characteristics,such as cut-off frequency,selectivity,type,noise,gain and power.A novel reconfigurable operational amplifier is proposed to realize the optimization of noise and scalability of power dissipation.The chip was fabricated in an SMIC 0.13μm CMOS process.The main filter and frequency calibration circuit occupy 1.8×0.8 mm2 and 0.48×0.25 mm2 areas,respectively.The measurement results indicate that the filter provides Butterworth and Chebyshev responses with a wide frequency tuning range from 280 kHz to 15 MHz and a gain range from 0 to 18 dB.An IIP3 of 29 dBm is achieved under a 1.2 V power supply.The input inferred noise density varies from 41 to 133 nV/(Hz)1/2 according to a given standard,and the power consumptions are 5.46 mW for low band(from 280 kHz to 3 MHz) and 8.74 mW for high band(from 3 to 15 MHz) mode.  相似文献   

8.
李娟  赵冯  叶国敬  洪志良 《半导体学报》2009,30(3):035003-7
A receiver for SRDs implemented by the 0.35μm CMOS process is presented. The receiver, together with the ADC, power amplifier (PA), frequency synthesizer and digital baseband has been integrated into a single chip solution. Low cost and low power requirements are met by optimizing the receiver architecture and circuit topology. A simple mixed-signal mode I/Q imbalance calibration circuit is proposed to enhance the IRR (image rejection ratio) so as to raise the BER. From a single 3 V power supply, the receiver consumes 5.9 mA. The measurement result shows that the receiver achieves reference sensitivity of-60 dBm and a control gain of 60 dB. The S11 reaches -20 dB at 433 MHz and -10 dB at 868 MHz without off-chip impedance match network. The die area is only 2 mm^2 including the bias circuit.  相似文献   

9.
This paper presents a continuously and widely tunable analog baseband chain with a digital-assisted calibration scheme implemented on a 0.13μm CMOS technology.The analog baseband is compliant with several digital broadcasting system(DBS) standards,including DVB-S,DVB-S2,and ABS-S.The cut-off frequency of the baseband circuit can be changed continuously from 4.5 to 32 MHz.The gain adjustment range is from 6 to 55.5 dB with 0.5 dB step.The calibration includes automatic frequency tuning(AFT) and automatic DC offset calibration (DCOC) to achieve less than 6%cut-off frequency deviation and 3 mV residual output offset.The out-of-band IIP2 and IIP3 of the overall chain are 45 dBm and 18 dBm respectively,while the input referred noise(IRN) is 17.4 nV/Hz1/2.All circuit blocks are operated at 2.8 V from LDO and consume current of 20.4 mA in the receiving mode.  相似文献   

10.
一种用于短距离无线通信的低功耗多频带可配置收发机   总被引:2,自引:2,他引:0  
A reconfigurable multi-mode multi-band transceiver for low power short-range wireless communication applications is presented.Its low intermediate frequency(IF) receiver with 3 MHz IF carrier frequency and the direct-conversion transmitter support reconfigurable signal bandwidths from 250 kHz to 2 MHz and support a highest data rate of 3 Mbps for MSK modulation.An integrated multi-band PLL frequency synthesizer is utilized to provide the quadrature LO signals from about 300 MHz to 1 GHz for the transceiver multi-band application. The transceiver has been implemented in a 0.18μm CMOS process.The measurement results at the maximum gain mode show that the receiver achieves a noise figure(NF) of 4.9/5.5 dB and an input 3rd order intermodulation point(IIP3) of-19.6/-18.2 dBm in 400/900 MHz band.The transmitter working in 400/900 MHz band can deliver 10.2/7.3 dBm power to a 50Ωload.The transceiver consumes 32.9/35.6 mW in receive mode and 47.4/50.1 mW in transmit mode in 400/900 MHz band,respectively.  相似文献   

11.
This paper reviews the requirements for Software Defined Radio (SDR) systems for high-speed wireless applications and compares how well the different technology choices available- from ASICs, FPGAs to digital signal processors (DSPs) and general purpose processors (GPPs) - meet them.  相似文献   

12.
Packet size is restricted due to the error-prone wireless channel which drops the network energy utilization. Furthermore, the frequent packet retransmissions also lead to energy waste. In order to improve the energy efficiency of wireless networks and save the energy of wireless devices, EEFA (Energy Efficiency Frame Aggregation), a frame aggregation based energy-efficient scheduling algorithm for IEEE 802.11n wireless network, is proposed. EEFA changes the size of aggregated frame dynamically according to the frame error rate, so as to ensure the data transmission and retransmissions completed during the TXOP and reduce energy consumption of channel contention. NS2 simulation results show that EEFA algorithm achieves better performance than the original frame-aggregation algorithm.  相似文献   

13.
The rapid growth of 3G/4G enabled devices such as smartphones and tablets in large numbers has created increased demand formobile data services.Wi-Fi offloading helps satisfy the requirements of data-rich applications and terminals with improved multi-media.Wi-Fi is an essential approach to alleviating mobile data traffic load on a cellular network because it provides extra capaci-ty and improves overall performance.In this paper,we propose an integrated LTE/Wi-Fi architecture with software-defined net-working(SDN)abstraction in mobile backhaul and enhanced components that facilitate the move towards next-generation 5G mo-bile networks.Our proposed architecture enables programmable offloading policies that take into account real-time network condi-tions as well as the status of devices and applications.This mechanism improves overall network performance by deriving real-time policies and steering traffic between cellular and Wi-Fi networks more efficiently.  相似文献   

14.
The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q) MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (〉 1000 ℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.  相似文献   

15.
A low power 3-5 GHz CMOS UWB receiver front-end   总被引:1,自引:0,他引:1  
A novel low power RF receiver front-end for 3-5 GHz UWB is presented. Designed in the 0.13μm CMOS process, the direct conversion receiver features a wideband balun-coupled noise cancelling transconductance input stage, followed by quadrature passive mixers and transimpedance loading amplifiers. Measurement results show that the receiver achieves an input return loss below -8.5 dB across the 3.1-4.7 GHz frequency range, maximum voltage conversion gain of 27 dB, minimum noise figure of 4 dB, IIP3 of -11.5 dBm, and IIP2 of 33 dBm. Working under 1.2 V supply voltage, the receiver consumes total current of 18 mA including 10 mA by on-chip quadrature LO signal generation and buffer circuits. The chip area with pads is 1.1 × 1.5 mm^2.  相似文献   

16.
李永亮  徐秋霞 《半导体学报》2009,30(12):126001-4
Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.  相似文献   

17.
基于非线性DAC的高速直接数字频率合成器   总被引:1,自引:1,他引:0  
This paper presents a high speed ROM-less direct digital frequency synthesizer (DDFS) which has a phase resolution of 32 bits and a magnitude resolution of 10 bits. A 10-bit nonlinear segmented DAC is used in place of the ROM look-up table for phase-to-sine amplitude conversion and the linear DAC in a conventional DDFS. The design procedure for implementing the nonlinear DAC is presented. To ensure high speed, current mode logic (CML) is used. The chip is implemented in Chartered 0.35μm COMS technology with active area of 2.0 × 2.5 mm^2 and total power consumption of 400 mW at a single 3.3 V supply voltage. The maximum operating frequency is 850 MHz at room temperature and 1.0 GHz at 0℃.  相似文献   

18.
This paper presents a security strategy for resisting a physical attack utilizing data remanence in powered- off static random access memory (SRAM). Based on the mechanism of physical attack to data remanence, the strategy intends to erase data remanence in memory cells once the power supply is removed, which disturbs attackers trying to steal the right information. Novel on-chip secure circuits including secure power supply and erase transistor are integrated into conventional SRAM to realize erase operation. Implemented in 0.25μm Huahong-NEC CMOS technology, an SRAM exploiting the proposed security strategy shows the erase operation is accomplished within 0.2 μs and data remanence is successfully eliminated. Compared with conventional SRAM, the retentive time of data remanence is reduced by 82% while the operation power consumption only increases by 7%.  相似文献   

19.
A fully-differential charge pump(FDCP)with perfect current matching and low output current noise is realized for phase-locked loops(PLLs).An easily stable common-mode feedback(CMFB)circuit which can handle high input voltage swing is proposed.Current mismatch and current noise contribution from the CMFB circuit is minimized.In order to optimize PLL phase noise,the output current noise of the FDCP is analyzed in detail and calculated with the sampling principle.The calculation result agrees well with the simulation.Based on the noise analysis,many methods to lower output current noise of the FDCP are discussed.The fully-differential charge pump is integrated into a 1–2 GHz frequency synthesizer and fabricated in an SMIC CMOS 0.18μm process.The measured output reference spur is–64 dBc to–69 dBc.The in-band and out-band phase noise is–95 dBc/Hz at 3 kHz frequency offset and–123 dBc/Hz at 1 MHz frequency offset respectively.  相似文献   

20.
The emergency relating to software-defined networking(SDN),especially in terms of the prototype associated with OpenFlow,pro-vides new possibilities for innovating on network design.Researchers have started to extend SDN to cellular networks.Such newprogrammable architecture is beneficial to the evolution of mobile networks and allows operators to provide better services.Thetypical cellular network comprises radio access network(RAN)and core network(CN);hence,the technique roadmap diverges intwo ways.In this paper,we investigate SoftRAN,the latest SDN solution for RAN,and SoftCell and MobileFlow,the latest solu-tions for CN.We also define a series of control functions for CROWD.Unlike in the other literature,we emphasize only software-defined cellular network solutions and specifications in order to provide possible research directions.  相似文献   

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