一种用于电视调谐器的宽带CMOS低噪声放大器设计

介绍了一种宽带CMOS低噪声放大器设计方法,采用噪声抵消技术消除输入MOS管的噪声贡献.芯片采用TSMC 0.25μm 1P5M RF CMOS工艺实现.测试结果表明:在50～860MHz工作频率内,电压增益约为13.4dB;噪声系数在2.4～3.5dB之间;增益1dB压缩点为-6.7dBm;输入参考三阶交调点为3.3dBm.在2.5V直流电压下测得的功耗约为30mW.     

一种低功耗低电流失配可编程电荷泵

基于0.13 μm CMOS工艺,实现了一种适用于超宽带EOC-Tuner频率合成器的低功耗可编程电荷泵。通过延迟调节单元基本消除了电荷泵控制信号的延迟失配,采用辅助管降低电荷共享的影响,采用误差放大器实现电流精确匹配。后仿结果表明,电荷泵的标准电流为10~160 μA,电流变化步长为10 μA;当输出电流为160 μA时,电流失配低于0.6%,基本消除了电流失配;在0.3~1.2 V输出电压范围内,电流波动为6.4%,避免了沟道长度调制效应的不良影响;延迟失配和电荷共享导致的电流过冲低于20%;当锁相环环路锁定且电源电压为1.5 V时,电荷泵和鉴频鉴相器仅消耗电流197 μA。流片测试结果表明,锁相环输出信号频率为675 MHz时,电荷泵产生的参考杂散约为－64.81 dBc。     

A 10-bit 80-MS/s opamp-sharing pipelined ADC with a switch-embedded dual-input MDAC

A 10-bit 80-MS/s opamp-sharing pipelined ADC is implemented in a 0.18-μm CMOS.An opampsharing MDAC with a switch-embedded dual-input opamp is proposed to eliminate the non-resetting and successive-stage crosstalk problems observed in the conventional opamp-sharing technique.The ADC achieves a peak SNDR of 60.1 dB(ENOB = 9.69 bits) and a peak SFDR of 76 dB,while maintaining more than 9.6 ENOB for the full Nyquist input bandwidth.The core area of the ADC is 1.1 mm~2 and the chip consumes 28 mW with a 1.8 V power supply.     

一种应用于CHPAV2.0的高速EoC Tuner芯片

设计了一种用于C-HomePlug AV (CHPAV) 2.0标准同轴以太网系统的低中频宽带射频收发器芯片。该芯片支持的射频频率范围为0.3~1.3 GHz,中频最高支持300 MHz带宽。芯片集成双LNA和双PA,提供灵活的增益配置,并有利于噪声与线性度的折中优化。同时,集成了整数分频频率合成器和数字控制接口。芯片采用TSMC 0.13 μm CMOS工艺实现。仿真结果表明,接收链路最大增益为40 dB,发射功率最高达10 dBm,在3.3 V电源供电下,接收和发射模式的最大功耗分别为64 mA和118 mA。     

应用于低中频和零中频DVB调谐器中8阶信道滤波器设计

An eighth order active-RC filter for low-IF and zero-IF DVB tuner applications is presented, which is implemented in Butterworth biquad structure. An automatic frequency tuning circuit is introduced to compensate the cut-off frequency variation using a 6-bit switched-capacitor array. Switched-resistor arrays are adopted to cover different cut-off frequencies in low-IF and zero-IF modes. Measurement results show that precise cut-off frequencies at 2.5, 3, 3.5 and 4 MHz in zero-IF mode, 5, 6, 7 and 8 MHz in low-IF mode can be achieved, 60 dB frequency attenuation can be obtained at 20 MHz, and the in-band group delay agrees well with the simulation. Two-tone testing shows the in-band IM3 achieves -52 dB and the out-band IM3 achieves -55 dB with -11 dBm input power. This proposed filter circuit, fabricated in a SMIC 0.18μm CMOS process, consumes 4 mA current with 1.8 V power supply.     

一种采用开关内置双输入MDAC的10b 80 MS/s 运放共享流水线模数转换器

在0.18-μm CMOS工艺下设计了一种10位80MHz采样频率的运放共享流水线模数转换器,提出了一种开关内置的双输入运放共享的MDAC,从而有效的消除了传统结构存在的无法复位和级间干扰通路的问题。测试结果显示,本设计的模数转换器的SNDR可以达到60.1dB,无杂散动态范围可以达到76dB,有效位为9.69 bit,在整个奈奎斯特带宽内有效位均高于9.6bit。芯片核心面积为1.1 mm2,在1.8 V电源电压下功耗为28mW。     

一种应用于频率综合器的全差分电荷泵的设计与噪声分析

A fully-differential charge pump（FDCP）with perfect current matching and low output current noise is realized for phase-locked loops（PLLs）.An easily stable common-mode feedback（CMFB）circuit which can handle high input voltage swing is proposed.Current mismatch and current noise contribution from the CMFB circuit is minimized.In order to optimize PLL phase noise,the output current noise of the FDCP is analyzed in detail and calculated with the sampling principle.The calculation result agrees well with the simulation.Based on the noise analysis,many methods to lower output current noise of the FDCP are discussed.The fully-differential charge pump is integrated into a 1–2 GHz frequency synthesizer and fabricated in an SMIC CMOS 0.18μm process.The measured output reference spur is–64 dBc to–69 dBc.The in-band and out-band phase noise is–95 dBc/Hz at 3 kHz frequency offset and–123 dBc/Hz at 1 MHz frequency offset respectively.     

一种用于电视调谐器的宽带CMOS低噪声放大器设计

介绍了一种宽带CMOS低噪声放大器设计方法,采用噪声抵消技术消除输入MOS管的噪声贡献.芯片采用TSMC 0.25μm 1P5M RF CMOS工艺实现.测试结果表明:在50～860MHz工作频率内,电压增益约为13.4dB;噪声系数在2.4～3.5dB之间;增益1dB压缩点为-6.7dBm;输入参考三阶交调点为3.3dBm.在2.5V直流电压下测得的功耗约为30mW.     

一种全集成CMOS数字电视调谐器射频前端

设计了一种全集成CMOS数字电视调谐器(DTV tuner)射频前端电路.该电路采用二次变频低中频结构,集成了低噪声放大器、上变频混频器、下变频混频器等模块.芯片采用0.18μm CMOS工艺实现,测试结果表明,在50～860MHz频率范围内,射频前端能够实现很好的输入阻抗匹配,并且总的增益变化范围达到20dB.其中,在最大增益模式下,电压增益为 33dB,单边带噪声系数(SSB NF)为9.6dB,输入参考三阶交调点(ⅡP3)为-11Bm;在最小增益模式下,电压增益为 14dB,单边带噪声系数为28dB,输入参考三阶交调点为 8dBm.射频前端电路面积为1.04mm×0.98mm,工作电压为1.8V,消耗电流为30mA.     

一种全集成CMOS数字电视调谐器射频前端

设计了一种全集成CMOS数字电视调谐器(DTV tuner)射频前端电路.该电路采用二次变频低中频结构,集成了低噪声放大器、上变频混频器、下变频混频器等模块.芯片采用0.18μm CMOS工艺实现,测试结果表明,在50～860MHz频率范围内,射频前端能够实现很好的输入阻抗匹配,并且总的增益变化范围达到20dB.其中,在最大增益模式下,电压增益为+33dB,单边带噪声系数(SSB NF)为9.6dB,输入参考三阶交调点(ⅡP3)为-11Bm;在最小增益模式下,电压增益为+14dB,单边带噪声系数为28dB,输入参考三阶交调点为+8dBm.射频前端电路面积为1.04mm×0.98mm,工作电压为1.8V,消耗电流为30mA.