非晶硅TFT栅界面层氮化硅薄膜性能的研究

采用傅里叶变换红外光谱仪、椭偏仪和YAF-5000M等测试仪器，对薄膜晶体栅界面层的键结构及含量、光学性能、物理性能以及晶体管导电性能进行分析研究。重点讨论了键含量与薄膜禁带宽度和介电常数的关系。结果表明：提高栅界面层N—H键含量（或减少Si-H键含量）能提高光禁带宽度和相对介电常数。栅界面层能改善非晶氮化硅薄膜和非晶硅薄膜的界面性能，提高薄膜晶体管的稳定性和场效应迁移率。     

无机薄膜电致发光研究进展

薄膜电致发光显示是平板显示的主要技术之一。文章在介绍了无机薄膜电致发光器件结构和工作原理的基础上，介绍了薄膜电致发光研究的一般方法，描述了无机薄膜电致发光的研究现状，分析了薄膜电致发光所面临的问题，重点探讨了解决蓝光问题的几种方案。蓝光亮度已能满足全色显示的要求，薄膜电致发光具有广阔的发展前景。     

Study on Effect of Flux on CeMgAl_(11)O_(19)∶Tb ~(3 ) Phosphor

Asthebackgroundlightofhighqualityliquidcrystaldisplay (LCD) ,coldcathodefluorescentlamp(CCFL)becametheresearchemphasisalongwiththedevelopmentofthemarketofLCD .AnimportantissueagainsttheapplicationofCCFListhebrightnessandlifetimeofthephosphors .CeMgAl11O19∶Tb3 (CMAT)isaveryimportantgreen emittingphosphorfortheim provementofbrightnessofCCFL .CeMgAl11O19∶Tb3 isakindofhexagonalpoly aluminatewiththestructureasshowninFig .1.Thecrystalstructureissimilartomagnetoplumbite (idealformula…     

人工耳蜗言语处理系统的CIS算法设计与实现

采用双麦克风工作模式提高语音采集效果。为解决传统CIS算法在信噪比低的情况下语音识别率差的问题,在CIS算法设计前端增加了基于LMS算法的自适应滤波器。通过Matlab仿真,语音中的噪声得到很大程度上消除。为了降低运算量、减少硬件资源和功耗,通过FFT运算在频域实现带通滤波功能。在硬件实现中,与刺激芯片联合仿真,刺激幅度与刺激时间均满足要求。     

Study on Effect of Flux on CeMgAl11O19∶Tb3+ Phosphor

High calcination temperature is an important factor in the preparation process of CeMgAl11O19∶Tb3 . To decrease the temperature, different fluxes(H3BO3, MgF2 and AlF3) were tested in order to compare their influence on the luminescence property and particle size distribution of CeMgAl11O19∶Tb3 . The result shows that when the content of MgF2 is 0.1 mol/mol, the intensity of luminescence can attain a maximum. Furthermore, MgF2 can improve the particle size quality of the phosphor. So MgF2 can take the place of the conventional flux H3BO3 to prepare high quality CeMgAl11O19∶Tb3 phosphor. In addition, the relation between phosphor property and content of AlF3 was also studied. The crystal structure of the phosphor was analyzed by XRD method. The phase composition analysis shows that the reason of decrease of the brightness of CeMgAl11O19∶Tb3 phosphor is the emergence of TbAlO3 and α-Al2O3 during the preparation process.     

Preparation and Luminescence Properties of the New Long Phosphorescent Phosphors Ba1-xCaxAl2O4∶Eu2+,Dy3+

New long phosphorescent phosphors Ba1-xCaxAl2O4∶Eu2 , Dy3 with tunable color emission were prepared and studied. The emission spectra show that the tuning range of the color emission of the phosphors is between 498 and 440 nm, which is dependent on x, under the excitation of UV. The wavelength of the afterglow increases with the increasing of x until x equals 0.6. The XRD patterns show that the single phase limit in the phosphors is below x value of 0.4. The Thermoluminescence spectra were measured to investigate the traps created by the doping of Dy3 .     

还原气氛对Sr1.94－xBaxMgSi2O7:Eu2+0.01，Dy3+0.05长余辉材料发光性能的影响

用高温固相反应法,分别在H₂和CO还原气氛 中制备了Sr1.94－xBaxMgSi ₂O₇:Eu²⁺0.01,Dy³⁺0.05长 余辉材料;研究了不同还原气氛对该系列荧光粉发光及余辉性能的影响。研究结果表明,随 着Ba²⁺浓度的增 加,荧光粉的晶体结构发生了改变,从而导致发射光谱和余辉光谱的峰位也发生了变化;CO 还原气氛下所制备荧光 粉的纯度要高于H₂还原气氛下制备的样品,CO还原气氛下所制备荧光粉的余辉的初始亮 度和衰减都明显优于H₂还原条件下所制备的样品,说明CO还原条件下更容易形成具有合 适浓度和深度陷阱的纯相荧光粉,有助于提高样品的余辉性能。     

白光LED用红色荧光粉Sr0.7Ca0.3－2xMoO4:Eux3+Nax+的制备及发光性能研究

采用高温固相法合成白光LED用红色荧光粉Sr0.7Ca0.3-2 xMoO4Eux3+Nax+,对样品分别进行X射线衍射(XRD)分析和荧光光谱的测定,讨论了不同掺杂量下合成的荧光粉的发光性质。XRD图谱分析表明,在1 000℃下灼烧9h得到的样品为纯相的SrMoO4。研究结果表明,制备的Sr0.7Ca0.3-2 xMoO4:Eux3+Nax+荧光粉可以被近紫外光(393nm)和蓝光(464nm)有效激发;发射光谱中,在波长在611nm和615nm处有很强的发射峰,其中最强发射峰位于615nm左右,与Eu3+的5D0→7F2跃迁对应。进一步探讨Na+和Eu3+掺杂浓度对发光强度的影响,得出Sr0.7Ca0.3-2 x MoO4:Eux3+Nax+样品的发光强度比SrMoO4:Eu3+Na+增强,当掺杂量x=0.07时,Sr0.7Ca0.3-2 x MoO4:Eux3+Nax+样品在波长614nm处发光强度最强。最后测试计算样品在393nm紫外激发下的色坐标,当Eu3+和Na+的掺杂量x=0.02时,样品红色显示最强。研究结果表明,所合成的红色荧光粉Sr0.7Ca0.3-2 xMoO4:Eux3+Nax+新型红色荧光粉适合在白光LED中应用。     

铁矿石浮选药剂的研究现状

重点介绍了国内外铁矿浮选药剂的研究状况,并对新型铁矿浮选药剂的性能进行了评述,指出了铁矿浮选药剂的发展方向。     

0.65BaTiO3-0.35Na0.5Bi0.5TiO3薄膜的制备及其电学性能研究

采用脉冲激光沉积法制备了0.65 BT-0.35NBT/SRO/STO异质结构薄膜.通过XRD、AFM和SEM分析了0.65BT-0.35NBT薄膜的微观结构.XRD结果表明:0.65BT-0.35NBT为钙钛矿结构,其薄膜为沿c轴择优取向生长结构.0.65BT-0.35NBT薄膜表现出优异的铁电和压电性能,剩余极化强度达到38.1 μC/cm2.0.65 BT-0.35NBT薄膜的居里温度(Tc ～ 223℃)明显高于BTO的居里温度,是一种具有优异电学性能和较高的居里温度的BTO基铁电材料.