Preparation and Luminescence Properties of the New Long Phosphorescent Phosphors Ba_(1-x)Ca_xAl_2O_4∶Eu ~(2 ), Dy~(3 )

Inrecentyears ,SrAl2 O4 ∶Eu2 ,Dy3 ,CaAl2 O4 ∶Eu2 ,Nd3 [1～ 8] andBaAl2 O4 ∶Eu2 ,Dy3 [9]havebeenconsideredasusefulblueandgreenphos phorsbytheirlongdurationphosphorescence .Howev er ,toourknowledge ,thephosphorBa1-xCaxAl2 O4 ∶Eu2 ,Dy3 hasnotbeeninvestigated .TheluminescenceofEu2 isverystronglydepen dentonthehostlattice ,whichcanoccurfromtheul traviolettotheredregionoftheelectromagneticspec trum .Itiswellknownthatthepersistentluminescenceisduetothetrappingofenergyinthed…     

光折变Bi12SiO20晶体中的波耦合性质

研究在光折变Bi12SiO20晶体中二波耦合扩散全息记录的信号光能量增益和偏振态改变。在3种制备可得的晶体切割面上给出任意光栅取向的能量和偏振态耦合量的取值范围,分析了信号光能量增益和偏振态改变量分别达到最大值时各向同性和各向异性耦合的作用,此外研究旋光效应，压电及弹光效应在3种晶体切割面上对矢量波耦合的影响。     

Preparation and Luminescence Properties of the New Long Phosphorescent Phosphors Ba1-x Cax Al2O4 ： Eu^2＋ , Dy^3＋

New long phosphorescent phosphors Ba1-x CaxAl2O4:Eu^2 , Dy^3 with tunable color emission were prepared and studied. The emission spectra show that the tuning range of the color emission of the phosphors is between 498 and 440 nm, which is dependent on x, under the excitation of UV. The wavelength of the afterglow increases with the increasing of x until x equals 0.6. The XRD patterns show that the single phase limit in the phosphors is below x value of 0.4.The Thermolumineseence spectra were measured to investigate the traps created by the doping of Dy^3 .     

基于单片机与PC机的Z-扫描自动检测系统的设计

介绍了用于研究和测量材料的非线性光学性质的Z-扫描检测系统的工作原理。设计了Z-扫描检测系统硬件和软件．利用单片机和PC机．实现了步进电机的状态控制，测量数据的采集、处理、存储和图形显示等功能。实际应用表明：该系统达到了设计要求，应用效果良好。     

A Novel Structure of ZnS：Tm^3＋ TFEL Device

A novel ZnS :TmF3 TFEL device with the structure of ITO/SiO2/ZnS : TmF3/SiO2/ZnS : TmF3/SiO2/Al was prepared by e-beam evaporation method. The EL emission spectra show that the brightness of the novel structure devices greatly increases compared with that of devices with traditional double insulator structure, and the ratio of blue emission to red emission of the novel structure device is also improved. The improvement of the EL characteristics of this kind TFEL device is attributed to both of the electron acceleration and the ZnS/SiO2 interface.     

射频溅射CoCr双层膜及软磁盘的研究

本研究利用射频溅射法制备了垂直磁记录用正CoCr单层膜及NiFe/CoCr双层膜。研究了溅射压力Prf、基板温度Tsb对CoCr合金层(002)面△θ50角,矫顽力Hc⊥、Hc∥有效各向异性场HK*及正方比S⊥、S∥的影响。可以控制溅射条件使单层CoCr膜(002)面△θ50在5°以内,双层膜CoCr层△θ50在10°以内,而在较宽的范围内调整Hc⊥、Hc∥值。选择一定溅射条件制备了NiFe/CoCr双层膜软盘,并利用市售普通纵向记录的51/4英寸软盘机驱动装置及其环形磁头对该盘进行了读写实验,表明可以实现垂直方式的写入和读出。     

Ba铁氧体溅射薄膜的研究

研究了射频溅射制备Ｂａ铁氧体薄膜的成膜条件对晶化、晶体结构及磁性能的影响。我们的工作表明，为了使射频溅射Ｂａ铁氧体薄膜形成磁铅石结构的晶体，基板温度需高于６００℃，更高的基板温度可获得好的Ｃ轴垂直取向。非晶膜经热处理晶化所需温度要比直接溅射温度高得多。过大、过小的氧气分压不利于垂直膜的生成。使用挡板对最小溅射角限制以后，可在小的基板－靶间距情况下定得Ｃ轴垂直取向的薄膜。     

Preparation and Luminescence Properties of the New Long Phosphorescent Phosphors Ba1-xCaxAl2O4∶Eu2+,Dy3+

New long phosphorescent phosphors Ba1-xCaxAl2O4∶Eu2 , Dy3 with tunable color emission were prepared and studied. The emission spectra show that the tuning range of the color emission of the phosphors is between 498 and 440 nm, which is dependent on x, under the excitation of UV. The wavelength of the afterglow increases with the increasing of x until x equals 0.6. The XRD patterns show that the single phase limit in the phosphors is below x value of 0.4. The Thermoluminescence spectra were measured to investigate the traps created by the doping of Dy3 .