高帧频高灵敏度线列PIN-CMOS图像传感器研究

设计了一款高帧频高灵敏度双通道16元线列PIN-CMOS图像传感器。相对于传统的pn结光电二极管,PIN光电二极管具有结电容小和量子效率高的优点,可以降低CTIA像素电路的噪声,提高信噪比;同时采用一种新型的相关双采样电路结构,可以在边积分边读出的模式下实现相关双采样,抑制像素复位带来的KTC噪声。基于0.35μm PIN-CMOS工艺进行了线列CMOS图像传感器流片,并对器件的光电性能进行了测试。测试结果表明:在像元尺寸为90μm×90μm,700nm波长下,器件灵敏度达3000V/(lx·s),量子效率为96%;在40kHz高帧频、0.05lx光照条件下器件信噪比为7,适于弱信号下的高速探测。     

高光谱成像用高速CMOS图像传感器设计

针对高帧频、全局曝光、通道数可选等成像应用需求,提出了一种高光谱成像用CMOS图像传感器,重点分析了8T像素结构和读出电路的设计方案与电路原理,完成了芯片的整体仿真和流片验证。结果表明:设计符合预期,成像效果良好,像素具备较高的满阱和全局快门功能,读出电路实现了输出通道数可选功能,同时保证了模拟信号在大面阵、低输出通道数条件下的高速、低噪声输出,最终实现的像素阵列为2048×256,像素尺寸为24μm×24μm,单通道最大输出频率为40×10⁶pixel/s,最高帧频为4000f/s,可满足高光谱成像系统对图像传感器的需求。     

非制冷微悬臂梁式红外焦平面探测器读出电路设计

针对非制冷微悬臂梁电容式红外探测器,设计了一款焦平面读出电路.根据电路噪声建模与分析,对电路进行了优化设计以抑制噪声.采用0.35μm的CMOS工艺设计,制造了16×16读出电路原型.测试结果表明,5V电源电压、50Hz帧频下电路总功耗为16.5mW,典型工作模式下线性度为99.2%,通道一致性大于97%,等效输入噪声电荷小于150e.     

一种Gm-APD阵列型读出电路的设计与实现

提出了一种雪崩光电二极管(APD)阵列读出电路的系统架构。针对2×8盖革模式InGaAs-APD传感器阵列,进行读出电路系统设计,其中的时间数字转换器(TDC)采用游标卡尺二段式结构,将计数分为粗计数与细计数,计数器放置在像素外,整个芯片共用一个计数器,以实现资源共享,减小了芯片面积,降低了系统功耗。全局采用高、低频时钟分别控制计数、传输数据,进一步降低系统功耗。系统采用CSMC 0.5μm CMOS工艺进行流片验证。测试结果表明,该系统的功能与时序正确。     

一种6T像素全局曝光CMOS图像传感器

提出了一种基于6T像素结构的全局曝光CMOS图像传感器。通过采用PPD结构的6T像素、高复位电平和低阈值器件,提高了动态范围,并优化设计了像素单元的版图,使之获得较高的填充系数;模拟读出电路部分,通过采用双采样、增益放大和减小列级固定模式噪声(FPN)处理,以及对列选控制电路进行优化,减小了对全局PGA的运放设计要求。芯片的工作频率为20MHz,动态范围为66dB,实现了全局曝光方式CMOS图像传感器的设计。     

CMOS有源像素传感器特性分析与优化设计

设计了一个三管有源像素和其用开关电容放大器实现的双采样读出电路.该电路被嵌入一64×64像素阵列CMOS图像传感器,在Chartered公司0.35μm工艺线上成功流片.在8μm×8μm像素尺寸下实现了57%的填充因子.测得可见光响应灵敏度为0.8V/(lux·s),动态范围为50dB.理论分析和实验结果表明随着工艺尺寸缩小,像素尺寸减小会使光响应灵敏度降低.在深亚微米工艺条件下,较深的n阱/p衬底结光电二极管可以提供合理的填充因子和光响应灵敏度.     

光谱成像用红外焦平面读出电路研究

红外焦平面是光谱成像系统的核心器件。讨论了多光谱用红外焦平面读出电路的特点,设计了用于多光谱成像的64×16元红外焦平面读出电路。读出电路采用CTIA输入级,快照式曝光方式,边积分边读出工作。电路芯片与InGaAs光敏芯片阵列通过铟柱倒焊的方法,组成混成互连焦平面器件,像元间距50μm,响应波段0.9～1.7μm,盲元率0.2%,半阱时的响应不均匀性4.7%。     

CMOS有源像素传感器特性分析与优化设计

设计了一个三管有源像素和其用开关电容放大器实现的双采样读出电路.该电路被嵌入一64×64像素阵列CMOS图像传感器,在Chartered公司0.35μm工艺线上成功流片.在8μm×8μm像素尺寸下实现了57%的填充因子.测得可见光响应灵敏度为0.8V/(lux·s),动态范围为50dB.理论分析和实验结果表明随着工艺尺寸缩小,像素尺寸减小会使光响应灵敏度降低.在深亚微米工艺条件下,较深的n阱/p衬底结光电二极管可以提供合理的填充因子和光响应灵敏度.     

像素级数字化紫外焦平面读出电路的研究

为提高紫外焦平面组件成像质量,提出了可用于紫外焦平面的像素级数字化读出电路结构。针对紫外信号微弱及焦平面探测器像素面积小的特点,设计了基于电容反馈跨阻放大器(Capacitive Trans-Impedance Amplifier,CTIA)结构、模数转换器和锁存器的紫外焦平面像素级模数转换读出电路,并给出了实现像素内模数转换的工作原理。详细讨论了像素内模数转换的实现方法,各模块的设计要求及其具体实现,并基于0.35μm DP4M CMOS工艺设计制造了面阵规模128×128、像素单元面积50μm×50μm的读出电路芯片。电路性能测试与成像实验表明:电路的精度达到1mV以下,有效位数达到11位,实现了紫外焦平面读出电路的低噪声数字化输出。     

卫星用高光谱红外焦平面读出电路设计

研制出一款高性能卫星用高光谱红外焦平面CMOS（complementary metal oxide semiconductor）读出电路ROIC（readout integrated circuit）芯片。读出电路设计包括任意行选择功能以及行增益单独调制功能,满足高光谱应用对读出电路提出的新要求。读出电路7档增益可选,适用于中波与短波碲镉汞HgCdTe（MCT）芯片;其他功能包括边积分边读出IWR（integration while reading）,抗晕,串口功能控制以及全芯片电注入测试功能。读出电路采用0.35 m曝光缝合工艺,电源电压5 V,测试结果表现出良好的性能:在77 K条件下,全帧频可达450 Hz,功耗可调且典型值为300 mW。本文介绍了在读出电路设计的基本架构,提出设计中遇到的问题以及相应的解决方法,在文末给出了电路的测试结果。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.