一种改进的联合点特征与灰度特征的红外图像配准算法研究

在研究红外图像成像原理与特征、传统红外图像配准方法的基础上,提出了一种改进的联合点特征与灰度特征的红外图像配准算法。首先采用经典的Harris角点检测算法提取一次角点,在一次角点的基础上对其进行下降排序,对排序结果进行不同份数的等分并提取每一部分的中间值,最后根据图像配准需求有效利用中值选择不同的特征点;该算法充分利用环形区域的旋转不变性和特征点区域灰度差异性很小的原则进行特征点匹配。实验结果表明该算法能够提取出更加精确的匹配点,能够有效的完成红外图像配准。     

基于Harris-SIFT特征匹配的图像自动配准算法研究

为解决目前大多图像配准算法存在匹配精度低、实时性差的问题,本文提出了一种基于区域分块提取特征点的自动配准算法。该算法结合了Harris算子与SIFT(Scale-Invariant Feature Transform)算子的优点,先用Harris算子快速提取角点作为图像原始特征点,然后利用SIFT算子的特征描述方法对原始特征点进行描述,获得具有尺度不变性的特征点描述符,最后通过欧氏距离确定匹配点对进行图像配准。实验结果表明,该算法保留了Harris算子和SIFT算子的优点,减少了经典SIF算法提取极值点的时间,并且具有良好的鲁棒性、尺度不变性。本文针对200幅图像进行测验,当发生平移、旋转或缩放变换时,两幅图像间的匹配正确率高达95%。结果表明该算法能高效、高精度的实现图像配准。     

基于二维局域波和角点匹配的多模态图像配准

目前多模态图像配准研究是现代图像处理的一个热点。提出了一种基于二维局域波分解后剩余图像和角点检测的自动点匹配的多模态图像配准方法。首先通过理论分析得出通过求解剩余图像之间的变换参数即可获得原始图像之间的变换参数,从而论证了二维局域波应用于多模态图像配准的可行性,提出了一个新的基于Harris角点检测的高精度自动点匹配算法。该算法充分利用了图像的角点特征以及图像灰度和位置信息,匹配过程中采用圆形模板进行相似度计算和松弛匹配。实验表明,该算法可以精确的自动匹配,其精度优于传统的点匹配算法。     

一种基于SIFT和区域选择的图像拼接方法

提出了一种基于SIFT和区域选择相结合的图像拼接方法.该方法采用改进的尺度不变特征变换(SIFT)特征提取方法获得图像特征点,并充分利用圆形区域的旋转不变性和互信息量最大原则进行特征点匹配,避免了传统的图像配准算法计算量过大、特征点匹配不准确等问题,最后采用加权平均的方法对图像进行融合.实验表明,该方法对图像间存在的平移、旋转、明暗强度和噪声干扰等都具有良好的鲁棒性,可实现高质量的图像拼接.     

一种基于点特征与Freeman链码的红外与微光图像配准算法研究

由于红外与微光图像成像原理的不同,成像特征的巨大差异,研究提出了一种基于点特征与Freeman链码的红外与微光图像配准算法。目的是解决红外与微光图像配准中特征点提取较复杂、特征匹配难的问题;采用优化的Harris角点检测算法进行特征点提取,结合环形灰度区域、RSTC不变矩和Freeman链码对红外与微光图像进行特征点匹配。实验结果表明该算法能够提取出有效的匹配点,能够有效地解决红外与微光图像配准中遇到的视场不统一、旋转、平移问题。     

透视变换模型的Harris图像配准

针对图像末制导系统的图像配准问题,提出了一种透视变换模型下基于增强旋转不变性Harris算法的快速图像配准方法.首先,将Harris算法进行了旋转不变性的增强,利用增强后的Harris算法提取摄像系统中每帧图像的角点,采用基于归一化互相关(Normalized Cross Correlation,NCC)匹配算法进行角点的粗匹配;然后,利用随机抽样一致(Random Samples Consensus,RANSAC)算法对粗匹配的角点进行迭代筛选,剔除错误的匹配点,并将保留下来的精确匹配角点带入透视变换模型,计算出稳定的可反映图像平移、旋转和尺度变换信息的透视变换矩阵;最后,利用得到的变换矩阵对图像进行配准.实验表明,该方法对平移、旋转、尺度变化、视角变化以及光照变化和模糊变化均具有良好的不变性,可以快速高效地实现高精度的图像配准.     

基于自适应筛选Harris角点检测的快速图像配准算法

针对传统Harris角点检测算法的图像配准过程计算量大、速度慢等问题,提出一种快速预筛选Harris角点检测算法。首先通过FAST算法快速排除大量非特征点,再通过抑制半径解决FAST角点聚簇现象,然后在FAST角点邻域内筛选出Harris角点,最后采用Brute-Force匹配方式得到精准匹配。实验结果表明:所提改进算法不仅提高了角点检测速度而且减少了冗余角点数量,在图像配准过程中有效提高了配准速度与精度,配准效果良好。     

基于方向角的特征配准算法

图像特征点匹配是计算机视觉领域的一个瓶颈问题,为了提高匹配精度,提出了一种基于方向角的特征配准算法.该算法采用Harris算子检测角点,根据图像梯度变化计算特征点的方向角,然后将待匹配特征点对间的方向角距离转化为权值对代价函数进行加权,并对特征点进行分析,改进了代价函数.实验证明,本文算法的匹配精度高于传统的归一化互相关(NCC)匹配,且具有一定的旋转不变性和抗噪性.     

分块的基于Harris角点检测的图像配准方法

传统的Harris角点检测选用全局的阈值且不具有尺度不变性,对于较大的图像会导致检测的角点分布不均、错检等问题,为此提出一种新的基于多尺度的Harris角点检测的图像配准方法.首先将图像分块,并对其进行相应排序,根据局部阈值来提取Harris角点,然后根据图像特征点的最邻近和次邻近距离之比来确定初始匹配,最后利用特征点附近的灰度信息来实现进一步的配准.实验证明该方法使得图像配准精度和配准效率得到了极大提高.     

基于SURF分割圆形区域的图像拼接

针对SURF(Speeded Up Robust Features)算法在图像拼接过程中配准精度低和运算复杂度较高的问题,提出了一种基于SURF分割圆形区域的图像拼接方法.首先,对图像进行特征点的检测和提取过程中,在传统SURF算法的基础上采用了分割圆形区域提取描述符;接着,计算了区域归一化的灰度均值和韦伯局部描述细节信息,形成新的描述符;然后,通过改进的RANSAC(RandomSample Consensus)算法对每个模块的误匹配点进行消除,得到精确的匹配特征点.实验结果表明,相较基于改进的SURF算法的图像拼接,该方法匹配正确率平均提高了6.05％,拼接时间平均减少了24.47％,匹配速度和效果有了较大提升,基本满足图像拼接速度快、精准度高、稳定可靠等要求.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.