基于区间重合度的雷达与ESM航迹关联算法

针对时变系统误差的情况,提出了一种基于区间重合度的雷达与电子支援措施(ESM)航迹关联算法。分析了时变系统误差对雷达与ESM测量数据的影响,将时变系统误差下航迹的不确定性转化为区间问题,通过区间的重合度来衡量雷达与ESM航迹关联程度,建立了灰色关联分析模型,实现了无需系统误差配准下的雷达与ESM航迹关联。在不同误差下进行了仿真对比,仿真结果表明,该算法能有效地实现时变系统误差下的雷达与ESM航迹关联,具有良好的鲁棒性。     

舰艇编队雷达与ESM航迹关联技术研究

主动雷达与ESM的数据关联是典型的异类传感器数据关联。首先对编队雷达与ESM的观测数据进行空间、时间上的对准,然后采用独立双门限判别规则对雷达与ESM航迹进行关联判决,最后仿真分析了该方法下雷达与ESM航迹关联算法的漏关联概率、错误关联概率和正确关联概率。仿真结果表明,该方法计算量适中,具有较低的漏关联概率和错误关联概率,能很好的解决编队雷达与ESM航迹关联问题。     

异地配置的雷达与电子支援措施航迹关联

针对雷达与电子支援措施(Electronic Support Measures,ESM)异地配置的情况,提出了一种基于ESM虚定位点的异类传感器航迹关联算法。ESM属于无源传感器,只能获取角度信息而缺少距离信息。该算法首先基于雷达量测定义了ESM虚定位点,为ESM提供了目标的距离信息。然后利用ESM虚定位点与交叉定位点构造距离统计量,基于统计理论方法对雷达与ESM航迹是否关联进行判决。在不同的测量误差和目标数目环境下进行了仿真实验,结果表明,该算法能较好地实现雷达与ESM的航迹关联。     

系统误差下异地配置的雷达和电子支援测量航迹关联

针对系统误差下异地配置的雷达和ESM航迹关联问题,提出了一种基于位置统计量和最大似然准则的异类传感器航迹关联算法。首先,基于位置统计量对目标进行了航迹粗关联,排除掉一些虚假关联组合;接着,在此基础上采用最大似然准则对目标进行了航迹细关联,以求进一步提高雷达和ESM航迹关联的检测概率。仿真结果表明,与现有算法相比,该算法可较好地完成对多目标的航迹关联。     

ESM与雷达航迹关联的最大似然估计算法

为解决ESM与雷达异类传感器的航迹关联问题,基于统计信号分析理论,采用最大似然估计准则,给出了利用ESM与雷达角度测量信息在航迹互联先验概率相等情况下的航迹关联判别函数.同时给出ESM与雷达航迹由等数量观测构成情况下的错误关联概率表达式.最后,由错误关联概率曲线得出了采取减小雷达航迹测量误差与ESM航迹测量误差比值和增加测量次数等措施可以减小错误关联概率的结论.     

基于几何法的雷达与ESM航迹关联算法

为解决雷达与ESM航迹关联门限的不确定性,提出了基于几何法的雷达与ESM航迹关联算法。该算法根据雷达与ESM的几何位置建立航迹粗关联函数,并利用航迹的历史信息建立航迹关联代价矩阵,通过代价最小实现航迹关联。仿真结果表明,该算法具有很好的关联性能。     

机载ESM与雷达航迹融合仿真系统研究

机载电子对抗侦察（ESM）和雷达已成为机载平台上获取目标信息的重要传感器。针对机载平台的特点模拟工程实践,从航迹配准、航迹关联和航迹融合三个阶段给出了一套仿真计算过程,构建了一个多参数航迹融合仿真模型。在航迹配准中主要考虑ESM传感器和雷达航迹数据之间的时空对齐问题,航迹关联中分析了基于统计理论的、基于模糊分析的和基于快速判别的三种航迹关联算法,在航迹融合中采用一种快速的加权融合的方法。仿真实验中给出了一种衡量不同航迹关联算法性能的评估计算方法,比较了在不同参数环境下三种航迹关联算法的性能及航迹融合的效果。最后给出了一些实验结论和工程实践性的建议,具有一定的工程参考意义。     

基于航迹矢量检测的雷达与电子支援设施抗差关联算法

针对雷达与电子支援设施(ESM)存在系统误差、上报目标不完全一致等复杂场景下目标航迹关联问题,该文基于高斯随机矢量统计特性,提出一种基于航迹矢量检测的雷达与ESM航迹抗差关联算法。首先在修正极坐标系(MPC)下推导目标状态估计分解方程,采用真实状态对消的方法得到航迹矢量,为剔除大部分非同源目标航迹,构建方位角变化率-距离变化率与距离比(ITG)统计量进行粗关联,然后采用基于航迹矢量\begin{document}${\chi ^2}$\end{document}检验的方法实现雷达与ESM的航迹关联。最后通过实验仿真验证了该文算法在不同系统误差、目标密度、检测概率等环境下的有效性。     

基于航迹矢量分级聚类的雷达与电子支援措施抗差关联算法

针对同平台雷达与电子支援措施(ESM)存在系统误差、上报目标不完全一致等复杂场景下航迹关联鲁棒性和有效性问题,该文提出一种基于航迹矢量分级聚类的雷达与ESM航迹抗差关联算法。首先推导修正极坐标系(MPC)下目标等价测量方程,基于等价测量的近似展开得到目标状态估计分解方程,利用真实状态对消的方法得到航迹矢量,基于高斯随机矢量的统计特性,采用航迹矢量分级聚类的方法提取同源航迹。最后通过实验仿真验证,所提算法在不同系统误差、目标分布密度、检测概率等环境下具有较好的关联效果和鲁棒性。     

各种体制与用途的雷达及系统

0225600雷达和 ESM 相关的仿真研究[刊]/郭徽东//系统仿真学报.—2002,14(8).—975～977(K)雷达和 ESM 航迹关联可认为是模式识别问题。在统计假设检验理论和模糊综合分析基础上建立了多目标运动模型、多门限数学模型、时序关联决策模型,给出了累积数据快速计算的模型,以此可对两类传感器的观测数据进行在线时间校准。通过模型能够实现雷达和 ESM 的快速关联,满足航迹关联的精度要求。并对不同运动态势的关联结果进行分析比较.取得了满意的结果。参5     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.