基于低温In_xGa_(1-x)P组分渐变缓冲层的InP/GaAs异质外延

采用低温GaAs与低温组分渐变InxGa1-xP作为缓冲层,利用低压金属有机化学气相外延(LP-MOCVD)技术,在GaAs(001)衬底上进行了InP/GaAs异质外延实验。实验中,InxGa1-xP缓冲层选用组分线性渐变生长模式(xIn0.49→1)。通过对InP/GaAs异质外延样品进行双晶X射线衍射(DCXRD)测试,并比较1.2μm厚InP外延层(004)晶面ω扫描及ω-2θ扫描的半高全宽(FWHM),确定了InxGa1-xP组分渐变缓冲层的最佳生长温度为450℃、渐变时间为500s。由透射电子显微镜(TEM)测试可知,InxGa1-xP组分渐变缓冲层的生长厚度约为250nm。在最佳生长条件下的InP/GaAs外延层中插入生长厚度为48nm的In0.53Ga0.47As,并对所得样品进行了室温光致发光(PL)谱测试,测试结果表明,中心波长为1643nm,FWHM为60meV。     

GaAs/InP的键合界面热应力分析

采用双层条状金属热应力模型,用MATLAB方法对退火过程中GaAs/InP晶片间的应力和双轴弹性形变能进行模拟和分析。结果表明:将InP剪薄至200μm,GaAs剪薄至175μm,剪应力取得了一个相对的小值,而剥离应力更是被完全消除,这时正应力也相对较小。而按照一定的比例适度剪薄两侧晶片的厚度,可以使得两侧的双轴形变能减小到原来的一半以下。通过减薄键合晶片的厚度可以得到较好的键合质量。另外,不管那一种应力都随退火温度的升高而快速增加,所以实验中一定保持低的退火温度,通常小于300°C为宜。     

GaAs参量振荡产生太赫兹波的腔相位匹配研究

基于腔相位匹配的方法,研究了GaAs微片状晶体构成的光学微腔光参量振荡产生太赫兹波的条件与参数设计.计算了腔相位匹配下GaAs晶体的最优化腔长,通过调节GaAs晶体的温度研究了太赫兹波的输出情况,模拟了不同波长下最低的能量阈值.结果表明,在完全相位匹配很难实现的情况下,采用腔相位匹配能很容易地实现大范围的太赫兹波调谐输出.结果为小型化光学太赫兹源的实验与理论研究提供了参考.     

基于异变缓冲层与应变层超晶格的InP/GaAs异质外延

利用低压金属有机化学气相沉积技术, 开展InP/GaAs异质外延实验。由450 ℃生长的低温GaAs层与超薄低温InP层组成双异变缓冲层, 并进一步在正常InP外延层中插入In1-xGaxP/InP(x=7.4%)应变层超晶格。在不同低温GaAs缓冲层厚度、应变层超晶格插入位置及应变层超晶格周期数等条件下, 详细比较了InP外延层(004)晶面的X射线衍射谱, 还尝试插入双应变层超晶格。实验中, 1.2 μm和2.5 μm厚InP外延层的ω扫描曲线半峰全宽仅370 arcsec和219 arcsec; 在2.5 μm厚InP层上生长了10周期In0.53Ga0.47As/InP 多量子阱, 室温PL谱峰值波长位于1625 nm, 半峰全宽为60 meV。实验结果表明, 该异质外延方案有可能成为实现InP-GaAs单片光电子集成的一种有效途径。     

周期极化GaAs晶体中差频产生太赫兹辐射的研究

传统的光学差频产生的太赫兹辐射转换效率低,不能获得高功率太赫兹辐射。本文对周期极化GaAs晶体中差频产生太赫兹辐射进行了理论计算,通过温度调谐实现了周期极化GaAs晶体中差频获得可调谐太赫兹波的输出。为了提高差频过程的增益和量子效率,在准相位匹配基础上引进了级联差频机理,并对最佳晶体长度和最佳泵浦频率进行了计算。结果表明,利用周期极化的GaAs晶体可以获得更高能量更高效率的太赫兹波辐射。     

Current-injection efficiency in semiconductor lasers with a waveguide based on quantum wells

A dynamic distributed diffusion-drift model of laser heterostructures, which takes into account carrier capture by quantum wells, is developed. The leakage currents in the lasing mode are calculated for different laser structures without wide-gap emitters: InGaAs/GaAs (lasing wavelength λ = 0.98 μm), InGaAsP/InP (λ = 1.3 μm), and InGaAs/InP (λ = 1.55 μm). It is shown that consideration of the finite carrier-capture time is of major importance for calculating structures with deep quantum wells. The ratio of the leakage currents to the total current in the structures with deep quantum wells (InGaAsP/InP and InGaAs/InP) increases with an increase in the injection current and may reach a few percent when the lasing threshold is multiply exceeded.     

化合物半导体器件与电路的研究进展

介绍了GaAs,InP和GaN等几种重要化合物半导体电子器件的特点、应用和发展前景。回顾了GaAs,InP和GaN材料的材料特性及其器件发展历程与现状。分别讨论了GaAs基HEMT由PHEMT渐变为MHEMT结构和性能的变化,GaAs基HBT在不同电路应用中器件的特性,InP基HEMT与HBT的器件结构及工作特性,GaN基HEMT与HBT的器件特性参数。总体而言,化合物半导体器件与电路在高功率和高频电子器件方面发展较快,GaAs,InP和GaN材料所制得的各种器件电路工作在不同的频率波段,其在相关领域发展潜力巨大。     

发射层对指数掺杂Ga1-χAlχ As/GaAs光阴极性能的影响

为了探索发射层厚度对指数掺杂Ga1-χAlχAs/GaAs光电阴极光学性能与光电发射性能的影响,实验制备了两种发射层厚度不同的阴极样品,并测试得到400μm～1 000 nm内反射率、透射率与光谱响应曲线.实验结果说明发射层2.0 μm厚的样品比1.6μm厚的样品性能更好.利用薄膜光学矩阵理论公式计算阴极膜系反射率、透...     

ZnGeP2光参变振荡器晶体参数的数值分析

给出了3μm~5μm中红外角度调谐ZnGeP2光参变振荡器晶体参数较完整的理论计算过程,分别计算了其角度调谐曲线、有效非线性系数曲线和光参变增益曲线,确定了光参变振荡器的相位匹配方式和晶体的切割角,同时计算了晶体的走离角和相位匹配允许角,所得结果对于ZnGeP2光参变振荡器的实验研究具有一定的参考价值.     

MBE-grown Ridge-waveguide InGaAs/InGaAsP Strained Quantum Well Lasers at 2 μm Wavelength

The result of molecular beam epitaxy (MBE)-grown ridge-waveguide InGaAs/ InGaAsP/InP strained quantum well lasers at 2 μm wavelength is reported. The pulsed electrical luminescence spectrum at room temperature is observed with peak wavelength of about 1.98 μm. At 77 K the lasers become lasing in pulse regime, with threshold current of about 18～30 mA, peak wavelength of about 1.87～ 1. 91 μm, and single longitudinal mode operation in the current range of 160～230 mA.     

Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host

Arrays of strained nanoscale InP islands in an In_0.49Ga_0.51P host on a GaAs(100) substrate and InAs islands in a In_0.53Ga_0.47As host on an InP(100) substrate are obtained by metalorganic vapor-phase epitaxy (MOVPE). Their structural and photoluminescence properties are investigated. It is shown that the nanoscale islands that are formed measure 80 nm (InP/InGaP) and 25–60 nm (InAs/InGaAs). The photoluminescence spectra of the nanoscale islands display bands in the wavelength ranges 0.66–0.72 and 1.66–1.91 μm at 77 K with maxima whose position does not vary as the effective thickness of InP and InAs increases. The radiation efficiency of the nanoscale InP islands is two orders of magnitude greater than the luminescence intensity of the InAs islands. Fiz. Tekh. Poluprovodn. 33, 858–862 (July 1999)     

自倍频激光晶体NGAB的研究

本文报道用最小偏向角和固定入射角相结合的方法测量NGAB晶体的折射率n     

长波双色Al_xGa_(1-x)As/GaAs量子阱红外探测器的研制

介绍了长波双色AlxGa1-xAs/GaAs多量子阱红外探测器单元的设计、制作和测试。器件光敏面面积为300μm×300μm,光吸收峰值波长分别为10.8、11.6μm;采用垂直入射光耦合的工作模式,65K温度2V偏压下,两个多量子阱区的暗电流分别为4.23×10-6、4.19×10-6A;黑体探测率分别为1.5×109、6.7×109cm.Hz1/2/W;响应率分别为0.063、0.282A/W。GaAs基量子阱红外探测器(QWIP)材料生长和加工工艺成熟、大面积均匀性好、成本低、不同波段之间的光学串音小,使得AlGaAs/GaAsQWIP在制作多色大面阵方面具有明显的优势。     

Temperature dependence of the properties of DBR mirrors used insurface normal optoelectronic devices

The variation in the center wavelength of distributed Bragg reflectors used in optoelectronic devices, such as surface emitting lasers and Fabry-Perot modulators, is measured as the temperature of the mirrors changes over the range 25°C to 105°C. An analytic expression for the shift in center wavelength with temperature is presented. The mirrors measured are made of InP/InGaAsP (λ_gap=1.15 μm), GaAs/AlAs, and Si/SiN_x. The linear shifts in center wavelength are 0.110±0.003 nm/°C, 0.087±0.003 nm/°C, and 0.067±0.007 nm/°C for the InP/InGaAsP, GaAs/AlAs, and Si/SiN mirrors, respectively. Based on these data, the change in penetration depth with temperature is calculated     

砷化镓、磷化铟化合物的液相外延生长

本文叙述了液相外延的简单理论及其生长工艺.稳态生长和瞬态生长中的三种冷却技术都是以生长速率取决于溶质向界面的扩散快慢为依据的.砷化镓液相外延所获得的实验结果与理论的一致性证实了本试验是符合扩散理论模式的.瞬态法中的过冷工艺能在几微米到十几微米的范围内获得重复的厚度和良好的表面形态的外延层.对生长厚度在一百微米以上的外延层则稳态法是一种理想的工艺.实验指出:严格舟器的处理,改善系统的密封性,提高保护气氛的纯度以及对生长溶液的高温热处理都会对外延层纯度的提高带来明显的效果.文中列出了各种生长工艺参数对外延层材料的电学性能,厚度控制以及表面形态的影响,并得到了本系统的理想生长工艺条件.薄层外延材料参数能满足器件制造的要求.在变容管和体效应管方面得到了应用,特别是在6毫米体效应管的制作中,得到了更为满意的结果.文章也列出了由瞬态法生长的磷化铟材料液相外延的初步结果.     

Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2／Ar Plasma

Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl_2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/min) were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.     

Wavelength controlled InAs/InP quantum dots for telecom laser applications

This article reviews the recent progress in the growth and device applications of InAs/InP quantum dots (QDs) for telecom applications. Wavelength tuning of the metalorganic vapor-phase epitaxy grown single layer and stacked InAs QDs embedded in InGaAsP/InP (1 0 0) over the 1.55-μm region at room temperature (RT) is achieved using ultra-thin GaAs interlayers underneath the QDs. The GaAs interlayers, together with reduced growth temperature and V/III ratio, and extended growth interruption suppress As/P exchange to reduce the QD height in a controlled way. Device quality of the QDs is demonstrated by temperature-dependent photoluminescence (PL) measurements, revealing zero-dimensional carrier confinement and defect-free InAs QDs, and is highlighted by continuous-wave ground-state lasing at RT of narrow ridge-waveguide QD lasers, exhibiting a broad gain spectrum. Unpolarized PL from the cleaved side, important for realization of polarization insensitive semiconductor optical amplifiers, is obtained from closely stacked QDs due to vertical electronic coupling.     

Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxy

We have demonstrated that a self-organization phenomenon occurs in strained InGaAs system on InP (311) substrates grown by metalorganic vapor phase epitaxy. This suggests that a similar formation process of nanocrystals exists not only on the GaAs (311)B substrate but also on the InP (311)B substrate. However, the ordering and the size homogeneity of the self-organized nanocrystals are slightly worse than those of the InGaAs/AlGaAs system on the GaAs (311)B substrate. The tensilely strained condition of a InGaAs/InP system with growth interruption in a PH₃ atmosphere reveals a surface morphology with nanocrystals even on the InP (100) substrate. It was found that strain energy and high growth temperature are important factors for self-organization on III-V compound semiconductors. Preliminary results indicate that the self-organized nanostructures in strained InGaAs/InP systems on InP substrates exhibit room temperature photoluminescent emissions at a wavelength of around 1.3 p.m.     

Influence des effets de contrainte induits par la température sur la conversion TE-TM dans des guides planaires de YIG substitué

We have demonstrated the tuning of linear birefringence in magnetooptic planar thin film waveguides by temperature adjustment. Using this method, phase-matching between coupled te₀and tm₀ modes, a necessary condition for the integrated optical isolator based on mode conversion, has been obtained at λ = 1.52 µm in bilayer gadolinium gallium substituted yig films. The waveguide temperature was 85°C. Moreover, phase-matching temperature can be modified by a slight variation of gadolinium and gallium substitutions as shown by a phase-matching observed in a waveguide at room temperature.     

AllnAs/InP异质隧道结的设计与器件应用

应用高掺杂pn结和异质结能带理论,计算了AllnAs/InP异质隧道结的电学特性,发现其性能优于AllnAS和InP同质隧道结,并得出了掺杂浓度与隧道电流的关系曲线.采用气态源分子束外延(GSMBE)设备生长了面电阻率约为10~(-4)Ω·cm~2的AllnAs/InP异质隧道结结构,并应用于制作1.3μm垂直腔面发射激光器(VCSEL),器件在室温下脉冲激射.

Abstract：

By using high doping pn junction and heterojunction energy band model,electrical properties of AlInAs/InP tunnel junction are calculated.It is found that AlInAs/InP hetero-tunnel junction is superior to AlInAs or InP homo-tunnel junction,and the influence of doping level on the tunneling current is discussed.AlInAs/InP tunnel junction structures are grown by gas-source molecular-beam epitaxy (GSMBE) with the specific contact resistivity of about 10~(-4) Ω·cm~2.Then such structures are adopted in the fabrication of 1.3 μm vertical-cavity surface-emitting lasers(VCSEL).