Novel design to improve band to band tunneling and gate induced drain leakages (GIDL) in cylindrical gate all around (GAA) MOSFET

Microsystem Technologies - In this paper a cylindrical Dual Metal (DM) Dielectric Engineered (DE) Gate All Around (GAA) MOSFET has been proposed to resolve a big issue of Gate Inducted Drain...     

High-K Spacer Dual-Metal Gate Stack Underlap Junctionless Gate All Around (HK-DMGS-JGAA) MOSFET for high frequency applications

High-K Spacer based Dual-Metal Gate Stack Junctionless Gate All Around (HK-DMGS-JGAA) MOSFET has been proposed and analyzed in this paper for high frequency analog ad RF applications. It has been done by comparing it with the existing Junctionless devices in particular, Junctionless-Gate All Around, Junctionless Gate All Around Underlap and Dual-Metal Junctionless Gate All Around Underlap MOSFET. It is so found that HK-DMGS-JGAA MOSFET shows higher I_ds, g_m, g_d and f_T over existing Junctionless device architectures making it a suitable device for high frequency analog applications. It has also been established that HK-DMGS-JGAA MOSFET has better I_ON/I_OFF ratio, Subthreshold Slope (SS) most close to the ideal values, lower Channel Resistance, R_ch, higher Early Voltage (V_EA), higher Frequency Transconductance Product, superior Transconductance Generation Factor, Maximum gains in terms of current gain, Maximum Transducer Power Gain and Unilateral Power Gain, superior noise performance in terms of the Noise Conductivity and Noise Figure. All these improved figure of merits warrant HK-DMGS-JGAA MOSFET as the best suited device design for various analog and digital applications along with high frequency applications.

     

Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed,high frequency digital and analog applications

Microsystem Technologies - In this paper Hafnium Oxide (HfO2) based cylindrical Junctionless Double Surrounding Gate (CJLDSG) MOSFET has been analyzed for various metrics of device performance....     

Core-Shell Nanowire Junctionless Accumalation Mode Field-Effect Transistor (CSN-JAM-FET) for High Frequency Applications - Analytical Study

Silicon - Here, an analytical model has been proposed for Core-Shell-Nanowire-Junctionless-Accumulation-Mode- Field-Effect Transistor (CSN-JAM-FET) for High Frequency Applications. CSN-JAM-FET has...     

A comparative study of anxiogenic effects of fluoroquinolones in rats

It is well known that the removal of a fixation point prior to the presentation of a peripheral target dramatically reduces saccadic reaction time (SRT). This effect has become known as the "gap effect". The present study examined several detailed kinematic variables to determine whether the removal of the fixation point also affects the manner in which saccades are produced. The findings indicate that saccades that were initiated after the removal of the fixation point had higher average velocities and reached greater peak velocities, accelerations, and decelerations than did saccades produced in the presence of the fixation point. The results suggest that the removal of the fixation point may affect the force-time curves of saccades in addition to affecting the time needed to initiate the saccades.     

Enhanced Analog Performance and High-Frequency Applications of Dielectric Engineered High-K Schottky Nanowire FET

Silicon - In this paper, Gallium Nitride (GaN) based Dielectric Engineered High-K GaN Schottky Nanowire Field Effect Transistor (DE-HK-GaN-SNWFET) is examined for enhancing analog performance for...