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Novel design to improve band to band tunneling and gate induced drain leakages (GIDL) in cylindrical gate all around (GAA) MOSFET |
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| Authors: | Rewari Sonam Nath Vandana Haldar Subhasis Deswal S S Gupta R S |
| Affiliation: | 1.University School of Information and Communication Technology, Guru Gobind Singh Indraprastha University, Sector-16C, Dwarka, New Delhi, 110078, India ;2.Department of Physics, Motilal Nehru College, University of Delhi, New Delhi, 110021, India ;3.Department of Electrical and Electronics Engineering, Maharaja Agrasen Institute of Technology, New Delhi, 110086, India ;4.Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, New Delhi, 110086, India ; |
| Abstract: | Microsystem Technologies - In this paper a cylindrical Dual Metal (DM) Dielectric Engineered (DE) Gate All Around (GAA) MOSFET has been proposed to resolve a big issue of Gate Inducted Drain... |
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