Repulsive Flux Pinning Force in NbTi/Nb Superconductor/Superconductor Multilayers

Flux pinning characteristics have been investigated for the Nb _x Ti_100-x /Nb(x = 65, 50 and 28) and Nb ₂₈ Ti ₇₂/Nb ₆₅ Ti ₃₅ superconductor(S)/superconductor(S^′) multilayers. The maximum of the pinning force F _{p⊥ max} perpendicular to the layer plane as a function of the structure modulation length λ has a peak in the quasi-two-dimensional region (λ～20 nm). The maximum. values of the F _{p⊥ max} versus λ curve are proportional to the difference of the GL coherence length (ξ _GL ) between the superconductive sublayers S and S^′. The results suggest that the large F _{p⊥ max} in the S/S^′ multilayer is caused by the repulsive pinning force due to Nb layers with larger ξ _GL .     

Coating of hydroxyapatite on metal plates using thermal dissociation of calcium-EDTA chelate in phosphate solutions under hydrothermal conditions

Coating of hydroxyapatite on various metal plates was carried out by a homogeneous precipitation technique using hydrothermal reactions in Ca(edta)^2-–NaH₂PO₄ at 140–200°C and pH 3.4–10.0. Hydroxyapatite films were formed on the surface of the iron plates in solutions at an initial pH above 4.7, whereas aggregates consisting of needle-like hydroxyapatite crystal radiating from a point in the form of flower deposited as islands on the surface of aluminum, copper and titanium plates. The upper part of the film formed on the surface of the iron plates consisted of needle-like hydroxyapatite particles whereas the bottom of the film consisted of spherical hydroxyapatite particles. The length of the needle-like hydroxyapatite particles increased with decreasing concentration of Ca(edta)^2-.     

Partial scan design and test sequence generation based on reduced scan shift method

This paper presents a partial scan algorithm, calledPARES (PartialscanAlgorithm based onREduced Scan shift), for designing partial scan circuits. PARES is based on the reduced scan shift that has been previously proposed for generating short test sequences for full scan circuits. In the reduced scan shift method, one determines proch FFs must be controlled and observed for each test vector. According to the results of similar analysis, PARES selects these FFs that must be controlled or observed for a large number of test vectors, as scanned FFs. Short test sequences are generated by reducing scan shift operations using a static test compaction method. To minimize the loss of fault coverage, the order of test vectors is so determined that the unscanned FFs are in the state required by the next test vector. If there are any faults undetected yet by a test sequence derived from the test vectors, then PARES uses a sequential circuit test generator to detect the faults. Experimental results for ISCAS'89 benchmark circuits are given to demonstrate the effectiveness of PARES.     

Complexity of the color appearance of objects with nonuniform illumination

An inversion relationship is clarified between lightness and brightness, and also between chroma and colorfulness under nonuniform illumination with different illuminance levels (high and low) within the same visual field. Brightness (or colorfulness) of object color with low lightness (or chroma) under high illuminance level is perceived higher than that of another object color with high lightness (or chroma) under low illuminance level. Two color images are given for showing the inversion phenomena on brightness–lightness and colorfulness–chroma between object colors under different illuminance levels. These color images are useful for making researchers on color understand the differences in concept between brightness and lightness, and also between colorfulness and chroma. In particular, the concept of colorfulness is important, but difficult to understand. © 2007 Wiley Periodicals, Inc. Col Res Appl, 32, 372–377, 2007     

Temperature Dependence of the Raman Spectrum in Lithium Oxide Single Crystal

Temperature dependence of the Raman spectrum of lithium oxide single crystal has been measured over a temperature range of 80 to 1073 K. The frequency shift and the line width of the Raman spectrum in lithium oxide were about 531 and 4.5 cm^-1 at 80 K, respectively. At 1073 K, the frequency shift and the line width attained the values of 464 and 112 cm^-1, respectively. The strong temperature dependence of the frequency shift and line width was compared with data from some crystals with a fluorite structure.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Sintering of fibrous barium titanate powder compacts with preferred orientation

The sintering of fibrous BaTiO₃ powder particles was investigated. Special emphasis was given to the role of particle orientation in the compact on densification and microstructure development. Compacts were made by dry-pressing. During the initial stage of sintering, the fibrous particles rearranged and bundles of particles were formed. The volume of pores between bundles of particles decreased on further heating. Grain growth started when the sintered density reached ca. 56% of the theoretical density. Higher temperatures of sintering increased the degree of the crystal axis orientation. Thus, highly orientated sintered bodies with high densities were prepared by heating at 1500 °C.     

Current collecting efficiency of micro tubular SOFCs

In this study, current collecting efficiency of the micro tubular solid oxide fuel cell (SOFC) was estimated to determine optimum size of the micro tubular SOFC. Two models for collecting current from single terminal (ST) and double terminal (DT) of anode tube were proposed and used to calculate the current collecting efficiency as functions of anode thickness, tube length and operating temperature. It was shown that design of the cell geometry and current correcting method are significantly important to achieve high performance micro tubular SOFC stacks. The efficiency loss estimated from the DT model was about 2–4-fold lower than those of obtained from the ST model. The DT model was shown to be more effective for higher operating temperature and the tube length.