Bi_2O_3掺杂对Mn-Cu-Ca系负温度系数热敏电阻性能的影响

通过在Mn-Cu-Ca系负温度系数热敏电阻器(NTCR)配方中掺杂质量分数x%的Bi2O3(x=0,0.5,1,2.4,4.8,7),采用传统固相反应法制备了单层圆片式热敏电阻元件,研究了该元件的微观结构和电性能。实验结果表明:Bi2O3存在于晶界处,Bi2O3的存在增大了元件的晶粒尺寸,同时影响元件的气孔率。Bi2O3的引入降低了元件的室温电阻率,拓宽了元件的使用温区。当Bi2O3的添加量为质量分数4.8%时,元件具有较低的室温电阻率(6?·cm)及较宽的使用温区(室温~240℃)。     

微型薄膜电阻的制备及研究

将具有优异特性的碳纳米管（CNTS）与负性感光胶（SU-8 2002）混合得到复合材料,将不同比例的碳纳米管通过超声工艺分散到SU-8 2002感光胶中,通过UV-LIGA加工工艺,热压处理后实现了微型电阻的快速制备。对复合薄膜电阻的性能进行测试,测试结果表明复合薄膜电阻率随着碳纳米管比例的增加而减小,当碳纳米管的比例为12%时,电阻率减小到0.06 ,复合材料达到逾渗阈值,频率小于1.2GHz时,电阻值的变化范围小于5%,为快速制备微型电阻提供了新的方法。     

接触面陷阱密度对a-InSnZnO薄膜晶体管器件电气性能的影响研究

We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powers.The device with the smallest N_t of 5.68×10¹¹ cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage(V_ON) of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio(I_ON/I_OFF) of⁸ x 108.With increasing N_t,the V_ON,S.S and I_ON/I_OFF were suppressed to-9.40 V,0.24 V/dec and 2.59×10⁸,respectively.The V_TH shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices.The result showed that the reduction in N_t contributes to an improvement in the electrical properties and stability.     

The sprayed ZnO films: nanostructures and physical parameters

We synthesized the pure and indium-doped (IZO) ZnO films with a facile composition control spray pyrolysis route. The substrate temperature (T_s) and In-doping effects on the properties of as-grown films are investigated. The X-ray pattern confirms that the as-synthesized ZnO phase is grown along a (002) preferential plane. It is revealed that the crystalline structure is improved with a substrate temperature of 350 ℃. Moreover, the morphology of as-grown films, analyzed by AFM, shows nanostructures that have grown along the c-axis. The (3 × 3μm²) area scanned AFM surface studies give the smooth film surface RMS < 40 nm. The UV-VIS-IR measurements reveal that the sprayed films are highly transparent in the visible and IR bands. The photoluminescence analysis shows that the strong blue and yellow luminescences of 2.11 and 2.81 eV are emitted from ZnO and IZO films with a slight shift in photon energy caused by In-doping. The band gap is a bit widened by In-doping, 3.21 eV (ZnO) and 3.31 eV (IZO) and the resistivity is reduced from 385 to 8 Ω ·m. An interesting result is the resistivity linear dependence on the substrate temperature of pure ZnO films.     

混凝土养护质量原位检测评价方法研究进展

论述了常用的混凝土养护质量原位检测方法的原理和差异,分析了养护质量检测方法存在的问题。采用单一的检测方法难以有效评价混凝土养护质量,且评价养护质量时所需的基准值也难以准确测定,因此,可以利用混凝土渗透性与电阻变化率这个相对值之间的相关性评价混凝土养护质量;常用的检测方法主要是检测混凝土某个时间点的养护状态,无法在线连续监测养护历程,而通过监测养护历程才能更有效地评价混凝土养护质量。     

Effect of Ag photo-doping on structural,optical and phase change properties of GeTe chalcogenide films

This paper reports the effect of Ag photo-doping on optical, electrical and structural properties of GeTe:Ag thin films. The absence of sharp diffraction peak confirms the amorphous nature of as-deposited and photo-doped films. The decrease in reflectance of GeTe:Ag bilayer films with photo-doping reaction time has been observed. The RAMAN spectrum showed the characteristic Raman bands for GeTe₄ (127 cm⁻¹), long chain interactions of Te–Te chains (145 cm⁻¹) and a broad peak for Ge–Ge vibrations (275 cm⁻¹) without appreciable change in their position/shape with photodoped Ag concentration. The electrical resistivity measurement shows that photo-doping of Ag led to sharp amorphous-crystalline phase transition along with an increase in transition temperature and resistivity value in both amorphous as well as crystalline state. The annealing of photo-doped GeTe:Ag samples showed an enhancement in the crystallinity of GeTe phase without any segregation of Ag phases in annealed samples. The preferential formation of GeTe (200) phase upon crystallization has been observed for GeTe:Ag films. Different optical parameters have been calculated for photo-doped and annealed samples and are discussed in conjunction with the modification of network structure of GeTe with inclusion of photo-doped Ag content.     

原位氧化工艺制备Ag-92SnO2In2O3电接触材料研究

以Ag-65SnIn-8熔炼雾化粉体为原料,采用原位氧化工艺制备了Ag-60SnO₂In₂O₃中间体粉体,与雾化纯银粉配比成Ag-92SnO₂In₂O₃材料,通过混粉-等静压-烧结-热压-挤压技术制备Ag-92SnO₂In₂O₃带材,再通过固相复合工艺制备所需要的Ag-92SnO₂In₂O₃/Cu/Fe电接点材料。相对比常规氧化工艺制备的Ag-60SnO₂In₂O₃中间体粉体制备的Ag-92SnO₂In₂O₃/Cu/Fe电接点材料,原位氧化工艺制备的Ag-92SnO₂In₂O₃/Cu/Fe电接点材料电阻率可达2.1μΩ.cm以下,硬度可达85~110HV;产品应用于380V,65A,功率因数0.7的电动机负载电路的热保护器中,电器寿命满足5000次分断要求,替代AgCdO/Cu/Fe电接点材料,实现环保,无镉化切换。     

基于防腐层电阻率的埋地管道防腐层退化规律

调研防腐层退化行为的研究现状,分析北京燃气防腐层应用现状,统计在役管道的土壤环境、杂散电流环境,结合历年防腐层电阻率及破损点检测数据,分析3PE及沥青类防腐层的.退化规律。研究得出:3PE防腐层材料较好,管段的平均防腐层电阻率随服役年限的变化较小,应重点考虑防腐层破损点的剥离情况,尤其在pH值较高、阴极保护、杂散电流干扰等多种情况叠加下的剥离风险。沥青类防腐层相对于3PE防腐层性能较差,由于服役年限较长及受各种因素影响导致防腐层电阻率较低,随着服役年限的增长,防腐层电阻率持续下降。沥青类防腐层由于破损点剥离程度随时间变化越来越严重,对于管段的平均防腐层电阻率有一定影响。对于防腐层退化规律的后续研究,应根据不同服役年限的防腐层试样,结合电化学阻抗谱、材料成分检测、材料性能检测等手段,分析防腐层性能的变化规律。     

Two types of changes in apparent resistivity in earthquake prediction

Two types of changes in apparent resistivity (AR) have been linked to earthquake occurrences. This paper studies the changes and their causes, in detail with the ultimate purpose of developing and assessing a method of earthquake (EQ) prediction. The AR changes of the first type (CFT) are considered to be precursors related to earthquakes (EQs); these appear mostly in the medium-term period before EQs and in the short-term period preceding EQs. The changes of the second type (CST) are characterized by a tur...     

直流磁控溅射铝纳米颗粒膜的微结构及电学特性

采用直流磁控溅射法,以高纯铝(99.99%)为靶材,高纯氩气(99.999%)为起辉气体,在经机械抛光的单晶Si衬底上制备铝纳米颗粒薄膜。利用X射线衍射仪(XRD)、光学薄膜测厚仪、扫描电子显微镜(SEM)和四探针测试仪分别测试了铝纳米颗粒薄膜的晶相结构、薄膜厚度、表面形貌及电阻率。XRD衍射图谱表明此薄膜为面心立方的多晶结构,择优取向为Al(111)晶面。随溅射功率由30 W增至300 W,铝纳米颗粒薄膜的沉积速率由3.03 nm/min增加至20.03 nm/min;而随溅射压强由1 Pa增加至3 Pa,沉积速率由2.95 nm/min降低到1.66 nm/min。在溅射功率为150 W,溅射压强为1.0 Pa条件下制备的样品具有良好的晶粒分布。随溅射功率从80 W增大到160 W,样品电阻率由4.0×10-7Ω·m逐渐减小到1.9×10-7Ω·m;而随溅射压强从1 Pa增至3 Pa,样品电阻率由1.9×10-7Ω·m增加到7.1×10-7Ω·m。