安岳—合川地区低阻气层形成机理研究

安岳—合川地区储层属于低孔、低渗砂岩储层,其复杂的微孔隙系统以及较大的水膜厚度使其具有高束缚水饱和度,且高矿化度的地层水形成了异常发达的导电网络,形成低阻特征。文中结合储层的岩性、物性及水质等进行了相关计算和实验分析,探索了研究区低阻气层的成因。结果表明,导致研究区气层低阻的因素包括粒度大小、高矿化度地层水、高束缚水饱和度。     

低质量Si材料制备太阳电池

通过对比不同硼-磷(B-P)补偿程度的低成本、高杂质含量硅材料制备的太阳电池的性能,发现在含B和其它杂质含量都比较高的Si材料中通过掺入P补偿过多的B可以提高低质量Si片的电阻率、增加少数载流子寿命从而提高电池效率同时还能够减少电池性能的衰减.利用低质量Si材料(B含量2*10-6wt)制作出了效率达到14%左右的大面...     

银粉形貌及表面处理对导电胶性能的影响

利用四点探针和电子万能试验机分别测定了同种树脂体系中不同银粉形貌及银粉表面处理下导电胶的体积电阻率和剪切强度,探索了银粉含量、形状尺寸及表面处理对导电胶性能的影响规律.     

提高导电胶性能的研究进展

导电胶作为一种新型的绿色微电子封装互连材料,其应用范围越来越广,并且其代替传统的Pb-Sn焊料已成为必然趋势。介绍了导电胶的研究应用现状,总结了导电胶的优点及存在的问题。综述了近几年来在提高导电胶的电导率、接触电阻稳定性以及力学性能等方面的研究进展,并展望了导电胶未来的发展方向。     

HDPE/ PC/CB复合体系双逾渗行为的研究

以炭黑(CB)为导电填料,填充到2种不相容的高聚物高密度聚乙烯(HDPE)和聚碳酸酯(PC)基体中制备高分子基正温度效应(PTC)材料.研究表明,CB在HIRE中的逾渗阈值约为20%;HDPE/PC/CB三元复合体系形成了双逾渗行为,当HDPE/PC质量比为40/60时,三元复合体系具有较好的PTC及PTC重复性.     

混凝土养护效果电阻率评价法探索

基于混凝土电阻率与含水率的关系,提出了一种定量评价混凝土养护效果的方法,即将设定接触面积的铜片电极以不同深度埋入混凝土试件内部,用恒电位计测试不同养护条件下混凝土试件内部电阻随深度的变化,根据计算出的混凝土内外层电阻率差值来判定养护的充分性.结果表明:可建立一条充分养护和不良养护之间的定量分界线,即当内外电阻率差值Δρ≤10kΩ.cm时可判定混凝土得到了充分养护,当Δρ≥50kΩ.cm时则可判定混凝土养护不良.     

微量银对Sn0.7Cu钎料物理性能及钎焊工艺性能的影响

SnCu共晶钎料是公认的SnPb钎料最具潜力的替代品,尤其在波峰焊上,但与其它无铅钎料相比,该钎料物理性能及铺展性能差,影响其广泛应用.通过在Sr0.7Cu合金基础上添加微量银来改善合金性能.结果表明,银含量对Sn0.7CuxAg钎料熔点影响不大,最大变化仅为0.3℃;随银含量增加,电阻率逐渐升高;同时,在Sn0.7C...     

Cu/X(X=Cr,Nb)纳米多层膜力/电学性能的尺度依赖性

利用纳米压痕实验以及四探针法,系统研究了相同层厚Cu/X(X=Cr,Nb)纳米金属多层膜的力学性能(强/硬度)和电学性能(电阻率)的尺度依赖性.微观分析表明:Cu/X多层膜调制结构清晰,Cu层沿{111}面择优生长,X层沿{110}面择优生长.纳米压入结果表明,Cu/X多层膜的强度依赖于调制周期,并随调制周期的减小而增加.多层膜变形机制在临界调制周期(λ~c≈25 nm)由Cu层内单根位错滑移转变为位错切割界面.多层膜的电阻率不仅与表面/界面以及晶界散射相关,而且在小尺度下受界面条件显著影响.通过修正的FS-MS模型可以量化界面效应对多层膜电阻率的影响.Cu/X纳米多层膜可以通过调控微观结构实现强度-电导率的合理匹配.     

Study of post annealing influence on structural, chemical and electrical properties of ZTO thin films

Zinc-Tin-Oxide (ZTO) thin films were deposited on glass substrate with varying concentrations (ZnO:SnO₂; 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZTO films were annealed at 450 °C in vacuum. These films were characterized to study the effect of annealing and addition of SnO₂ concentration on the structural, chemical and electrical properties. The XRD analysis indicates that crystallization of the ZTO films strongly depends on the concentration of SnO₂ and post annealing where annealed films showed polycrystalline nature. Atomic force microscopy (AFM) images manifest the surface morphology of these ZTO thin films. The XPS core level spectra of Zn(2p), O(1s) and Sn(3d) have been deconvoluted into their Gaussian component to evaluate the chemical changes, while valence band spectra reveal the electronic structures of these films. A small shift in Zn(2p) and Sn(3d) core level towards higher binding energy and O(1s) core level towards lower binding energy have been observed. The minimum electrical resistivity (ρ ≈ 3.69 × 10⁻² Ω-cm), maximum carrier concentration (n ≈ 3.26 × 10¹⁹ cm⁻³) and Hall mobility (μ ≈ 5.2 cm² v⁻¹ s⁻¹) were obtained for as-prepared ZTO (50:50) film thereafter move towards lowest resistivity (ρ ≈ 1.12 × 10⁻³ Ω-cm), highest carrier concentration (n ≈ 2.96 × 10²⁰ cm⁻³) and mobility (μ ≈ 18.8 cm² v⁻¹ s⁻¹) for annealed ZTO (50:50) thin film.     

High pressure electrical resistivity studies on Ni-doped TiO2 nanoparticles

Electrical resistivity measurement of Ni-doped TiO₂ nanoparticles were performed under high pressure using a Bridgman opposed anvil setup. It is observed that, anatase phase nanoparticles shows a sudden increase in resistivity below the pressure limit of 4 GPa and is attributed to the transition from anatase to rutile phase. In addition, the transition limit is shifted towards lower pressure region with increase in dopant concentration. But, Ni-doped TiO₂ nanoparticles with rutile phase shows a rapid decrease in resistivity up to 5 GPa and thereafter it becomes constant. Samples with constant resistivity behavior are mainly ascribed to the semiconductor-metallic transformation.