钯对钛膜吸氢能力的抗污染作用的研究

为寻求一种防止因表面污染而导致钛膜吸氢能力下降的的途径，用表面分析方法检测样品表面状态，用质谱仪测量样品吸氢能力，研究了表面状态和吸氢能力的相互关系。采用在钛膜上淀积钯膜的方法，可使受碳，氧污染的钛膜吸氢能力得以恢复。这种钯／太复合结构在吸氢有力上对碳，氧污染并不灵敏     

表面氧污染影响钛膜吸氢量的机理

表面氧污染的钛膜，其吸氢能力比清洁钛膜降低达数倍之多。在厚度d为40nm，表面氧污染的钛膜表面上，重新蒸镀一层极薄的（约1．2nm）清洁钛膜，吸氢、释氢的测量表明其吸氢能力得到恢复。另外，还对其他四块不同厚度的钛膜，在表面清洁及氧污染的条件下，分别进行了吸氢能力实验。实验结果证实：氧污染降低钛膜吸氢能力的原因是使钛膜上氢分子解离的位置减少，而不是扩散阻挡层的作用。     

表面氧污染影响钛膜吸氢量的机理

表面氧污染的钛膜，其吸氢能力比清洁钛膜降低达数倍之多，在厚度ｄ为４０ｎｍ，表面氧污染的钛膜表面上，重新蒸镀一层极薄的（约１．２ｎｍ）清洁钛膜，吸氢，释氢的测量表明其吸氢能力得到恢复。另外，还对其他四块不同厚度的钛膜，在表面清洁及氧污染的条件下，分别进行了吸氢能力实验，实验结果证实，氧污染降低钛氢能力的原因是使钛膜土氢分子解离的位置减少，而不是扩散阻挡层的作用。     

碳污染对钛膜吸氢能力影响的研究

在钼基底上蒸镀钛膜，用乙炔在钛膜表面引入碳污染，用Ｘ射线光电子谱和俄歇电子谱研究钛膜表面的碳的化学状态，以及表面的碳污染对钛吸氢能力的影响。实验发现，碳在钛表面以二种到三种化学状态存在。碳在钛表面将使钛膜的吸氢能力下降，而且不同化学状态的碳对钛膜吸氢能力的影响也不同。实验结果表明，呈ＴｉＣ状态的碳是降低钛膜吸氢能力的主要因素，共原因是它使解离吸附位置减少。     

碳污染对钛膜吸氢能力影响的研究

在钼基底上蒸镀钛膜，用乙炔（C2H2）在钛膜表面引入碳污染，用X射线光电子谱和俄歇电子谱研究钛膜表面的碳的化学状态，以及表面的碳污染对钛膜吸氢能力的影响。实验发现，碳在钛表面以两种到三种化学状态存在。碳在钛表面将使钛膜的吸氢能力下降，而且不同化学状态的碳对钛膜吸氢能力的影响也不同。实验结果表明，呈TiC状态的碳是降低钛膜吸氢能力的主要因素，其原因是它使解离吸附位置减少。     

表面氧污染影响钛膜吸氢量的机理

表面氧污染的钛膜，其吸氢能力比清洁钛膜降低达数倍之多。在厚度ｄ＝４００Ａ，表面氧污染的钛膜上重新蒸镀，使其表面再生一层极薄的清洁钛膜。吸氢，释氢测量表明其吸氢能力得到恢复。     

钛膜吸氢与释氢特性的研究

在SKL－12型多功能谱仪的预处理室中，采用超高真空镀膜的方法，得到了表面清洁的钛膜。对表面清洁及有一定量氧污染的钛膜进行了吸氢、释氢实验，并用理论模型拟合实验数据。结果表明：表面氧污染使钛膜吸氢能力降低，其原因在于氧原子占据了钛膜表面的吸附位置，使氢解离为原子的几率降低。     

钛膜吸氢与释氢特性的研究

在ＳＫＬ－１２型多功能谱仪的预处理室中，采用超高真空镀膜的方法，得到了表面清洁的钛膜。对表面清洁及表面一定量氧污染的钛膜进行了吸氢，释氢实验，并用理论模型拟合实验数据。结果表明：表面氧污染使钛膜吸氢能力降低，其原因在于氧原子占据了钛膜表面的吸附位置，使Ｈ２解离为原子的几率降低。     

钛膜吸氢与释氢特性的研究

在ＳＫＬ－１２型多功能谱仪的预处理室中，采用超高真空镀膜的方法，得到了表面清洁的钛膜。对表面清洁及有一定量氧污染的钛膜进行了吸氢、释氢实验，并用理论模型拟合实验数据。结果表明：表面氧污染使太膜吸氢能力降低，其原因在于氧原子占据了钛膜表面的吸附位置，使氢解离为原子的几率降低。     

表面等离子共振氢敏传感器理论和模拟

提出了一种钯(Pd)膜氢敏感表面等离子共振传感器结构,该传感器以镀在棱镜端面的 Pd作为氢敏感膜。Pd 膜吸氢以后发生化学反应,生成的 PdHx使折射率发生变化,同时,它作为金属膜产生 SPW,当折射率变化时又在金属和介质表面产生表面等离子共振。利用 Fortran 语言程序进行了表面等离子共振氢敏传感器的 Pd 膜厚度和传感器灵敏度数值模拟。氢气浓度的变化引起折射率的变化,数值模拟表明,表面等离子共振氢敏传感器的灵敏度与 Pd 膜厚度有关,当 Pd膜的厚度在 10-30nm 时,氢气浓度在 1%-10%范围内具有较高的灵敏度。这种传感器结构将用于监测氢气作燃料的商用和军用机车的氢气泄漏。     

Successive deposition of layered titanium oxide/indium tin oxide films on unheated substrates by twin direct current magnetron sputtering

Layered titanium oxide/indium tin oxide (TiO₂/ITO) films were successively deposited on unheated glass substrates in situ using a twin direct current magnetron sputtering system. The layered TiO₂/ITO films exhibited a strongly polycrystalline structure that comprises anatase and rutile phases, as revealed by X-ray diffraction and Raman spectra. The X-ray photoelectron spectrum of Ti2p also verified the stoichiometric state of titanium oxide near the surface. The photo-induced hydrophilic properties of the films were determined from changes in the water contact angles under ultra-violet (UV) irradiation. The results revealed that the layered TiO₂/ITO films possessed a dissipated rate of 30% when they were stored in the dark for 12 h. This result shows that the layered TiO₂/ITO films acted as “electron pools” with an inherent energy storage capability. This unique property is attributable to the rougher surface and nearly porosity-free columnar structure, which is responsible for increased UV energy absorption and loss-free hole or electron transportation.     

Suppression of phase transitions in Pd thin films by insertion of a Ti buffer layer

We investigated the effects of a thin titanium (Ti) buffer layer on structural changes and electrical responses of palladium (Pd) thin films. A Ti buffer layer was inserted between a Pd film and the substrate, with varying thickness from 0.5 to 80 nm. Unlike pure Pd films, Ti-buffered Pd films showed no structural deformations after cyclic exposure to hydrogen gas, leading to a linear relationship between sensitivity and hydrogen gas concentration over the measured concentration range of 0 to 2%. This was attributed to the suppression of phase transitions from the α to the β phase in Pd films, due to the reinforced film adhesion by the inserted Ti layer. Our results highlight the practical usability of Pd thin films as reliable and sensible hydrogen sensors, enabled simply by the insertion of a thin Ti buffer layer.     

Structure and electronic states in a-Si:H thin films

The hydrogenated amorphous silicon (a-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition at various substrate temperatures. This paper examined the relationship between structural evolution and electronic states of the tested thin films. Raman spectroscopy was used to evaluate the structural evolution in amorphous network. Meanwhile, Fourier transform infrared spectroscopy was applied to explore the change of hydrogen in thin films. Results show that the order of network on short and intermediate scales, the content and bonding mode of bonded hydrogen, as well as the intrinsic stress and silicon coordination defects, and closed rings in the thin films, vary with the deposition temperature. The dielectric spectra of samples were measured using SE850 spectra ellipsometer. The density of electronic band states (DOS) in both valence band and conduction band for a-Si:H thin films was obtained by fitting the measured dielectric spectra. The results, verified by optical measurement, reveal that the effect of hydrogenation on band edge DOS is predominant in comparison with that of network relaxation.     

Characterization of Ni–Pd alloy as anode for methanol oxidative fuel cell

Electrochemical deposition of Ni–Pd alloy films of various compositions from bath solution containing ethylenediamine (EDA) was carried out to use as anode material for methanol oxidative fuel cell in H₂SO₄ medium. Electronic absorption spectrum of bath solution containing Ni²⁺, Pd²⁺ ions and EDA indicated the formation of a four coordinate square planar metal–ligand complex of both the metal ions. X-ray diffraction (XRD) patterns of the deposited alloy films show an increase in Pd–Ni alloy lattice parameter with increase in Pd content, and indicate the substitution of Pd in the lattice. A nano/ultrafine kind of crystal growth was observed in the alloy film deposited at low current density (2.5 mA cm⁻²). X-ray photoelectron spectroscopic (XPS) studies on the successively sputtered films showed the presence of Ni and Pd in pure metallic states and the surface concentration ratio of Ni to Pd is less than bulk indicating the segregation of Pd on the surface. Electro-catalytic oxidation of methanol in H₂SO₄ medium is found to be promoted on Ni–Pd electrodeposits. The anodic peak current characteristics to oxidation reaction on Ni–Pd was found typically high when compared to pure nickel and the relative increase in surface area by alloying the Ni by Pd was found to be as much as 300 times.     

炔基化改性聚乙烯醇吸氢材料的制备及吸氢性能表征

以聚乙烯醇(PVA)高分子材料为基体,通过氨基甲酸酯化反应在PVA高分子链上引入炔基形成炔基功能化的高分子,利用核磁共振法对炔基化高分子的分子结构及接枝度进行表征。通过化学还原法制备出炔基化高分子负载纳米钯的复合材料,采用激光粒度仪确定纳米钯粒径分布。同时将不同接枝度炔基功能化的PVA和Pd/C催化剂,按照一定的比例采用研磨法制备出吸氢材料。利用PVT法对上述所有的吸氢材料的吸氢性能进行了研究。结果表明,氨基甲酸酯化改性PVA接枝度高的炔基化高分子与Pd/C混合研磨后的吸氢材料的吸氢效果最好,吸氢容量为0.8893 mol/kg。     

MOD制备的PZT薄膜的相结构发展和成分分析

采用MOD工艺制备了PZT薄膜,利用XRD和TEM研究了焦绿石相向钙钛矿相的转变过程．制备在Pt／Ti／SiO₂／Si衬底上的PZT薄膜,其XRD分析显示焦绿石相在600℃完全转变为钙钛矿相;与之相比,Pt箔上无支持的PZT薄膜,其TBM分析表明PZT焦绿石相完全转变为钙钛矿相的温度更高,且与薄膜的厚度有关．XPS研究表明,薄膜表面含有化学吸附氧和污染碳,无其它杂质存在.表面富含少量Pb,其Zr／Ti比与化学计量比一致,但晶格中缺氧．     

Influence of hydrogen-doped MgO thin films on the discharge characteristics in plasma display panels

In order to improve the discharge characteristics of Magnesium Oxide (MgO) thin films, hydrogen was doped to MgO thin films using an ion plating technique. Changes in the surface morphology, crystal orientation, optical properties, secondary electron emission coefficient, and defect states were studied with increasing hydrogen flow rates during the growth using field emission scanning electron microscope, X-ray diffraction, ellipsometry, γ-focused ion beam, and photoluminescence analysis. The change in firing voltage and delay time in plasma display panels (PDP) with the hydrogen-doped MgO thin films were also investigated. The results indicated that optimal hydrogen doping conditions can affect the surface structure and defect states: resulting in a significant reduction in the firing voltage and delay time of the PDP.