基于最小误差算法的BGA图像分割

针对BGA封装元器件焊点的空洞缺陷难以用常规方法检测的问题,本文利用数字图像处理理论中的图像分割技术对基于X射线所采集的图像检测BGA元器件焊点在PCB板上所存在的空洞缺陷。针对一些经典分割算法的优缺点,本文提出一种首先将X射线图像根据其灰度特征,投影到不同的小区域然后在不同的小区域内使用最小误差算法相结合的方法,实现了焊点图像的分割检测,并给出了相关实验结果。实验结果表明本文的方法在分割检测BGA图像的空洞缺陷上是有效的。     

SMT焊点视觉获取及预处理系统的建立与应用

为研究检测SMT焊点的质量和可靠性的方法，建立了一套SMT焊点视觉获取及预处理系统。该系统由硬件检测装置和相关软件组成，具有视频采集、图像捕捉、图像保存、图像预处理以及图像特征参数分析的功能。该系统可以实时对SMT焊点进行视频采集，可以捕捉图像并进行图像预处理，能够获得SMT焊点三维重构所需的图像。通过对比各种图像滤波算法和增强算法，找到了适合SMT焊点图像的预处理算法。     

基于特征融合的PCB焊点图像增强

<正>在使用AOI(Automated Optical Inspection)进行PCB焊点检测时，常使用图像特征进行焊点分类。针对焊点区域暗、特征细节不明显问题，本文提出了一种基于邻域颜色变化矩阵的图像融合增强算法，提取图像的暗部，利用多尺度金字塔融合，对高对比度、高曝光和颜色增强的图像进行融合，实现焊点图像增强。实验结果表明，本文方法与其他几种主流的算法相比较，在评估指标和图像质量方面都取得了良好效果，为后续的焊点质量检测奠定了基础^[1-3]。随着现代微电子技术的不断发展，PCB电路板逐渐从传统的分立插件器件向小封装和高密度的表贴器件发展，元件尺寸和芯片管脚间距越来越小^[4]。     

SMT焊点X-Ray检测系统的设计

利用Visual C++ 6.0编程软件设计了一个X射线检测机图像检测系统.用腐蚀算法和中值滤波法滤掉X射线图像中的大量噪声,编制了对焊点出现桥接和漏焊等情况的分析软件,实时显示和放大焊点检测图像,并可报警.     

基于机器视觉的焊点检测算法研究

为了提高电路板焊点检测的准确率,提出了改进的K-近邻法。首先,采用工业相机采集图像并选取470个焊点作为训练样本,利用模板匹配法对图像中的焊点进行定位。然后根据特征分布直方图提取焊点的特征并绘制特征分布情况,选择能区分不同类别焊点的特征作为有效特征。最后,建立改进的K-近邻法焊点检测分类器,选取559个焊点作为测试样本对模型进行测试。实验结果表明改进的K-近邻算法检测的准确率96%以上,可以有效地提高检测效率。     

全自动LED引线键合机焊点快速定位方法的研究

提出了一种定位全自动LED引线键合机焊点位置的新方法。该方法先用图形处理器(graphic processing unit,GPU)对获取的LED微芯片图像进行基于均值查找的自适应窗口大小的中值滤波处理,再通过自适应阈值的图像分割算法确定微芯片的潜在区域,然后将所有潜在区域以位置关系分组存储,利用灰度基本对称特征筛选出每组中的最佳潜在区域,再对选定区域进行加权处理,最后计算质心以精确定位LED微芯片焊点位置。实验结果表明,该检测方法速度快、定位准,而且对LED微芯片形状的一致性无要求,更适合自动化操作,从而提高生产效率。     

贴片电阻焊点内部空洞缺陷自适应检测

贴片电阻在回流焊过程中,受工艺影响,焊点内部或多或少会存在空洞缺陷,空洞占比率过高会严重降低器件的可靠性。该文融合局部预拟合(LPF)活动轮廓模型和自适应圆形卷积核,提出一种贴片电阻焊点内部空洞缺陷自适应检测方法。首先,根据贴片电阻图像具有明暗两个明显区域的特点,通过求解区域平均灰度差异最大的优化问题将其自适应地分为较暗和较亮两个区域。然后,针对较暗区域中空洞与背景之间对比度低、空洞分布较稀疏、面积偏大等特点,采用局部预拟合活动轮廓模型进行空洞检测;针对较亮区域中空洞与背景之间差异明显、空洞分布密集、面积偏小等特点,提出一种自适应圆形卷积核检测空洞。最后,采用形状因子和平均灰度策略剔除误检测,实现贴片电阻焊点内部空洞精细检测。实验结果表明,该文算法相较于其他检测算法性能有明显的提升,平均Dice系数高达0.8846。     

三种分割算法在BGA焊点图像分割中的应用

x射线BGA焊点检测图像中,存在大量与检测无关的冗余信息。针对这一问题,从原理和应用效果上对三种基本阈值分割算法进行了对比分析并进行仿真实验。通过对三种分割算法的比较,得到了较为通用的算法,效果令人满意。     

基于微焦点X射线BGA焊点缺陷检测

BGA封装是是一种高集成的封装方式,其焊点缺陷会影响封装器件性能。为克服全局阈值分割、边缘检测方法对BGA焊点缺陷检测错误率较高的问题,本文提出采用Otsu阈值分割、轮廓提取、边界跟踪方法提取焊点轮廓,并用灰度形态学顶帽操作、直方图拉伸、Blob分析提取焊点气泡轮廓。通过分析BGA焊点缺陷类型及特征,提出基于焊点轮廓、气泡轮廓特征参数的焊点检测与分类算法。试验研究表明该算法较全局阈值、Canny算子焊点缺陷检测的准确率高,能够准确的完成焊点缺陷分类。     

基于深度学习的电路板焊接异常检测算法研究

焊点的焊接质量决定了电路板的可靠性,而电路板焊接异常的快速检测是大批量生产的先决条件。为了快速地实现焊接异常的精确检测,提出了一种基于深度学习的焊点图像识别算法。该算法通过自适应矩估计配合加速卷积神经网络实现,可对大量焊接图片进行快速分类识别检测。实验选取5 000幅焊接图像训练集测试,并与传统的K-means聚类算法和Canny边缘检测算法对比。实验结果显示,在小球和连桥缺陷中3种方法效果相近,而在虚焊、少锡缺陷中,本算法具有明显优势。在1 000组测试集实验中,其综合检出率及召回率分别达97.92%和98.21%,明显优于传统方法,验证了本算法具有更好的应用前景。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.