基于整数规划的分散式视频全景系统节点任务分配算法

重点分析了分散式系统中的任务经典分配方法,并根据视频全景系统的实际需求设计了一个基于整数规划的视频全景系统节点任务分配方法,该方法同时考虑了系统通信开销和系统节点负荷的问题,使得系统能够尽量减小不必要的通信开销并让系统达到负荷平衡。     

系统辨识研究的现状

综述了系统辨识问题的研究进展,介绍了经典的系统辨识方法及其缺点,引出了将集员、多层递阶、神经网络、遗传算法、模糊逻辑、小波网络等知识应用于系统辨识得到的一些现代系统辨识方法,最后总结了系统辨识今后的发展方向。     

利用普通摄像头实现振动的实时测量

为实现对低频小振幅振动的实时测量,以USB摄像头为图像传感器,以常规计算机为上位机,设计了一套性价比较高的基于数字图像的检测装置。介绍了检测系统的原理和结构,以及主要的图像处理方法。根据系统的特点,本系统应用基于颜色的图像分割方法,大大提升了系统的适应性和可靠性,并利用捕捉振动物体部分区域的方法提高系统的测量精度,同时将卡尔曼滤波方法用于预测振动物体的位置,大大降低了系统处理的图像数据量,提高了系统的实时性,进而提高了系统的测量范围。二维低频振动测量实验证明了本系统性能可靠。     

基于JMS的RFID中间件的研究与实现

文中简单介绍了RFID技术以及RFID系统向企业级应用集成的关键技术--RFID中间件,并且在详细分析RFID中间件系统功能的基础上,重点阐述了基于JMS技术的RFID中间件消息系统的构建方法,并提出了一种消息系统的设计思想和实现方法,解决了RFID系统向企业级应用集成中数据共享的问题。     

基于能力要素的系统指标体系论证方法

在分析研究常用理论方法的基础上,结合体系结构设计技术,提出了一种基于能力要素的指标体系论证方法。该方法把系统指标体系看作一个整体,从系统能力、指标确定原则和系统运行背景等多视角对其进行综合分析。给出了该方法的论证框架,结合实例描述了该方法的论证过程,可供相关人员进行系统指标论证时参考。     

实现基于密钥的两级条件接收系统的新方法

介绍了基于密钥的条件接收系统的基本原理,两级条件接收系统的需求和原理,阐述了两级条件接收系统的一些实现方法,并对这些方法进行了比较。说明了其应用情况。     

基于混沌的保密通信研究

由于混沌系统对初始条件和混沌参数非常敏感以及生成的混沌系统具有非周期性和伪随机性的特性,近年来混沌系统在密码学领域中得到了较多的研究。提出了有关混沌系统在保密通信系统的实现方法。研究表明,该方法明显加强了混沌保密通信系统的安全特性。研究证明了它的有效性,正确性,可行性。     

基于BOTDR系统的检测方法研究进展北大核心

从BOTDR系统信号的检测方法出发,分别介绍了本地外差相干检测及自外差相干检测两种相干检测方法,描述并对比了多波长BOTDR系统的两种不同检测方法,进而列举分析了BOTDR检测系统中的噪声因素,对利用相干检测方法提升BOTDR系统信噪比的研究现状进行了研究。     

带有同道干扰的MIMO系统性能分析

鉴于已有评估MIMO系统性能的方法没有引入同道干扰而导致评估数据不准确,给出了一种准确评估MIMO系统性能的方法,并且通过K-best检测算法检验该方法的准确性.进而利用此估计方法评估了带有同道干扰的MIMO系统性能,并分析了同道干扰对系统性能的影响.仿真结果表明,随着干扰源的增加,同道干扰对MIMO系统的影响愈加明显.由于考虑了系统的同道干扰,故给出的估计方法更准确地评估了MIMO系统的性能.     

基于Orbitrom系统太阳轨迹的角度标校方法

文章介绍了无线电测控系统的常用角度标校方法,详细阐述了基于Orbitrom系统太阳轨迹的角度标校方法,实际表明对于高精度无线电测控系统该方法满足精度要求。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.