基于ROI互信息的电路板红外图像配准技术

电路板的红外图像配准是电路板红外图像故障检测系统中的重点研究内容,由于电路板红外图像背景区域灰度单调,元器件发热区域轮廓粗糙,且伴随着大片受环境影响的辐射区域,对配准精度和配准效率产生很大影响。结合这些特点,利用相位一致性提取电路板发热芯片轮廓,再将轮廓内的区域用区域增长法提取为电路板红外图像ROI,基于ROI的图像配准不仅最大限度地保留了图像信息,又显著降低互信息运算量。实验表明:相对不进行ROI提取的图像配准算法,本文算法能够在保证配准精度的前提下大幅提高配准效率,具有一定的实用性和鲁棒性。     

结合小波模极大值和改进Hausdorff距离的电路板红外图像配准

电路板红外图像具有背景区域灰度单调、元器件发热区域轮廓模糊、噪声高、对比度低等特点,对配准精度和稳定性有很大影响。针对这些特征,提出了结合小波模极大值和改进Hausdorff距离的红外图像配准方法。首先用小波模极大值的算法提取边缘曲线;然后对传统Hausdorff距离进行改进,边缘曲线分段,并建立匹配基本单元;其次对基本单元粗匹配,压缩搜索空间,再进行精匹配,找出最优变换。最后采用Matlab进行仿真,实现图像精确配准。对比实验结果表明:该方法明显提高了配准精度,显著改善了配准稳定性。     

红外与可见光图像自动配准算法的研究

提出了一种新的红外与可见光图像的配准算法,该方法基于图像的小波变换与互信息最大化完成图像的配准过程.首先通过搜索小波模极大提取图像感兴趣区域(ROI),完成图像预处理,并采用仿射变换,建立图像变换模型;其次将低分辨率图像进行图像插值,计算灰度直方图,进行概率分布的估计;最后选择模拟退火法,逼近全局最优解.实验结果证明了此算法的有效性.     

一种新的SAR图像自动配准算法

由于图像间光谱特性的差异，对图像配准的精度产生严重的影响，因此该文提出了一种基于改进灰度熵的SAR图像自动配准算法。文中首先对SAR图像进行配准前的预处理，提取图像掩模，然后计算图像行和列的灰度熵，将其作为图像的特征信息完成图像间的配准，提出了配准优化算法的完整步骤，并利用多种方法对配准结果进行评价。实验证明该方法可以有效克服图像间亮度不均的影响，充分利用了像素的有用信息，具有很高的配准精度和配准效率，是一种正确可行的图像配准算法。     

改进配准测度的SUFT红外图像快速配准算法

为方便电路板卡故障诊断,实现红外图像快速、有效配准,提出一种基于SUFT(Speeded-Up Robust Features)和相似四边形的红外图像快速配准算法。该算法首先对红外图像进行特征点检测,生成SUFT特征点描述子;然后采用欧氏距离进行相似性度量,提取粗匹配特征点对,再利用相似四边形进行精匹配,去除误配准点对;最后依据精匹配点对求解变换模型参数,实现红外图像的配准。实验表明,改进后的算法能有效剔除误匹配点对,提高配准精度,配准结果较理想,与同类算法相比耗时较短。因此该算法具有快速性、稳定性等优点,且配准精度较高,有很好的实用价值。     

基于区域特征与灰度交叉相关的序列图像拼接

针对具有平移、旋转、缩放变换的序列图像连续拼接,提出一种将基于区域特征的配准算法和基于灰度交叉相关的配准算法相结合的拼接算法。该算法用迭代阈值分割算法提取区域．利用区域特征进行配准,建立初始的同名区域对;然后以同名区域对的质心点作为特征点,基于图像的灰度信息,选择交叉相关准则作为度量;最后得到图像间的精确变换关系,实现序列图像的拼接。实验结果表明,算法配准率高,鲁棒性强。     

一种基于点特征与Freeman链码的红外与微光图像配准算法研究

由于红外与微光图像成像原理的不同,成像特征的巨大差异,研究提出了一种基于点特征与Freeman链码的红外与微光图像配准算法。目的是解决红外与微光图像配准中特征点提取较复杂、特征匹配难的问题;采用优化的Harris角点检测算法进行特征点提取,结合环形灰度区域、RSTC不变矩和Freeman链码对红外与微光图像进行特征点匹配。实验结果表明该算法能够提取出有效的匹配点,能够有效地解决红外与微光图像配准中遇到的视场不统一、旋转、平移问题。     

结合Broyden族算法和微分同胚变换的图像自动配准方法

本文采用微分同胚变换预处理图像,得到初始化形变场,提高对形变图像的配准精度;采用Broyden族算法优化能量函数,自动确定迭代次数,提高优化效率;基于Demons算法思想引入图像梯度灰度场相似量构造能量函数,提高灰度信息少的图像配准精度。实验证明,本文算法配准精度优于改进的Demons算法,尤其在配准大形变图像时,本文算法配准精度高的优势更加明显。     

基于ROI的高精度红外全景拼接算法研究

针对红外图像空间分辨率低、视场窄,导致图像配准率低、实时性差的问题,提出一种基于感兴趣区域(ROI)的高精度红外全景拼接算法。该算法首先根据两张相邻图像的近似位置关系,求取图像间的ROI;接着,在ROI窗口中提取尺度不变特征变换(SIFT)特征点并将其作为运动目标,结合KLT(Kanade-Lucas-Tomasi)实时跟踪算法确定待配准图像中特征点的位置信息并进行匹配;然后采用随机采样一致性(RANSAC)算法剔除误匹配点对;最后利用像素级融合法消除拼接痕迹,合成一幅分辨率稳定、视场宽的红外全景图像。经实验验证,该算法与传统SIFT算法相比,配准率提高了3.491%,运行时间约提高了50%,能够准确、有效地实现多帧红外图像的无缝拼接。     

基于边缘和互信息法的红外图像配准

用红外图像配准技术对多帧图像进行配准,不仅可以实现平台防抖等电子稳像功能,而且还可以通过对配准后的图像进行多帧累加来积累目标能量,增强图像的性噪比,从而为红外图像弱小目标识别提供帮助。将传统的单纯基于图像整体灰度和基于图像结构特征的配准方法相结合,利用边缘检测得到边缘图像,然后以交互方差为配准测度,以向下加速度法为寻优算法进行图像配准。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.