产生外差输出的光学发生器

光频发生器可以发生比现用设备更低噪声和更低功耗的射频输出。由加州理工学院喷气推进实验室R．Logan申请专利的光学射频合成器产生具有1～100GHz以上频率范围的相位稳定、强度调制的光载波。利用光纤的多数应用，包括从通信到射频天文学都可从强度可调的微波和毫米波频率信号使用中获得好处。这种信号目前用光学和电子学方法产生。光外差信号振荡系统以调谐到稍不同频率f1和f2的两台连续波激光器为基础。这两台激光器的输出被组合，两个频率之差导致产生第三个频率，即拍频（f1-f2）。为产生所希望的拍频，该两激光的频率差可以选择。需…     

基于法布里-珀罗波长选择器的毫米波信号产生的研究

随着移动增值服务的快速增加,对无线通信带宽的需求越来越高,光纤无线电系统作为宽带无线接入系统受到越来越多的关注。理论分析了将法布里-珀罗(F-P)波长选择器引入光纤无线电系统中从可调谐激光器中选出两束相位近似相等的相干光,利用光外差的原理经过光电探测器接收之后产生的毫米波信号,降低了相位噪声对产生的毫米波信号的影响。通过仿真发现在带通滤波器的输出端产生了频率为两束相干光频率差60GHz的毫米波信号,分析了随着光纤的长度增加,信号在光纤中的损耗越来越大,噪声也随之增加,毫米波信号的功率越来越低。     

空间引力波探测激光外差干涉信号模拟系统

由于激光外差干涉测量系统光机平台无法模拟多普勒频移,并且商用信号发生器无法实现多种类、高复杂度的星间外差干涉信号模拟,不能对空间引力波探测的相位计进行全面测试。通过分析外差干涉信号的特性,研究信号模拟系统的实现原理及方法,设计了空间引力波探测激光外差干涉信号模拟系统。首先,应用直接数字合成器（DDS）模拟外差干涉信号。其次,通过频率偏移方式模拟多普勒效应,应用混合同余算法生成散粒噪声并调制到外差干涉信号中。最后,基于FPGA搭建系统硬件平台,通过示波器及频谱分析仪分析生成信号的时频特性。实验结果表明,信号模拟系统在2~20 MHz的频率范围内杂波抑制度为?53 dBc,谐波（二次）抑制达到?47 dBc,生成信号的时频特性符合理论预期,满足空间引力波探测相位计的地面测试需求。     

基于相移光纤光栅的单光源毫米波生成研究

利用相移光纤光栅中不同的相移量可以在光栅传输阻带中的不同位置打开透射窗口这一特性,给出了用光外差法将单一光源形成两个差频再经拍频后生成毫米波的方案.理论分析和数值计算结果表明,采用单个光源产生毫米波所引入的激光随机相位噪声低于双光源系统,能够产生波长稳定、相位噪声低、频率调整方便、耦合效果好的毫米波,可为光纤无线通信系统实际应用提供参考.     

微波光子链路中的附加相位噪声分析

针对模拟微波光子链路中附加相位噪声对微波信号相位噪声的恶化问题,详细研究了光链路中白噪声及有色噪声的产生机理,建立了光链路的附加相位噪声理论模型,阐述了附加相位噪声的变化规律,并通过实验证实了模型的正确性。同时针对本振信号的多路光分配典型应用,提出了EDFA 辅助的附加相位噪声优化措施。实验结果表明所提出的相位噪声模型能够有效地应用于微波光子链路,能对附加相位噪声的分析和优化提供理论依据,具有较大的工程指导意义。     

高线性波分复用模拟光链路的设计及实现

面向多路射频模拟信号的高线性传输需求，基于强度调制-直接探测的原理，提出了基于波分复用技术的模拟射频光传输方案；利用高线性度模拟直调半导体激光器、波分复用器、模拟光电探测器，设计了基于微波光子技术的波分复用射频光传输链路，该链路具有低串扰、低失真、链路增益可调等性能。利用该链路进行了直调激光器、驱动控制电路、射频光发射模块和光接收模块的样机研制。对所研制出的样机进行了实验测试。测试结果表明：通道增益可在-30～10 dB调谐，通道内基波与二次谐波抑制比高于50 dB，相邻及非相邻通道间射频串扰均低于60 dB，相位一致性在±5°以内。针对不同的信号输入功率，在线调整链路增益，改善链路的信噪比或非线性失真效应。设计和研制的样机可用于低频段射频信号的光纤传输。     

噪声对消射频光子链路的噪声系数研究

噪声系数是宽带射频光子链路的重要参数,影响 射频信号传输和处理系统的信噪比。 提出了一种噪声对消射频光子链路,采用平衡光探测器对直流光和调制光转换的光电流相减 处理,得到链路的噪声系数改善。从光信号调制、探测及噪声功率变化特性出发,建立了噪 声对消射频光子链路的理论模型,并通过理论分析研究了噪声系数与激光功率、相对强度噪 声、光调制器损耗、光耦合器分光比等参数的关系。构建了噪声对消射频光子链路实验,对 频率6~18 GHz的噪声系数进行对比研究。实验研究结果表明,在相同 条件下,噪声 对消射频光子链路的噪声系数减小2～4 dB。理论和实验结果充分证 明提出的方法正确性。     

基于相位调制的大动态微波光子链路仿真研究

针对相位调制微波光链路线性解调困难的问题,开展了基于锁相环高线性相位解调方法的理论研究。建立了详细的链路模型,充分考虑噪声和非线性畸变的影响,推导得到了链路关键参数的变化趋势。同时结合实际链路器件参数,完成了链路关键参数的仿真研究。结果显示,基于锁相环,在200MHz的射频频率下,链路动态范围可达到127dB·Hz2/3,较传统强度调制方法提升近20dB,为大动态微波光子链路实验应用提供了一定的理论参考。     

基于光外差理论的毫米波RoF系统研究

从理论上介绍了利用光外差法产生毫米波RoF系统的原理,并分析了制约其性能的因素.基于光外差理论,对传统的光外差系统结构进行了改进.实验证明,与传统的光外差系统相比,改进的光外差系统受相对强度噪声的影响更小,在相同的接收光功率的情况下,误码率平均降低了3～4dB;同时,在一定范围内,改进的光外差系统性能几乎不受激光器线宽...     

采用单个相位调制器产生毫米波

实验研究了采用单个相位调制器(PM)产生毫米波的方案。该方案采用电混频器将射频(RF)信号与基带信号混频后再利用相位调制器产生双边带调制(DSB)信号,经光纤传输到基站后用一个光交叉复用器(IL)分离一阶边带和中心载波,一阶边带经过光电(O/E)检测器拍频产生两倍频于射频频率的毫米波,而中心载波可以作为上行链路载波重新利用。理论分析了该毫米波的传输性能,研究发现由于色散导致两个一阶边带时延不同,码元的占空比会随着传输距离的增加而减小,将限制毫米波的最大传输距离;实验中采用频率为20 GHz射频信号产生频率为40 GHz的毫米波,速率为2.5 Gbit/s的非归零(NRZ)码作为下行链路数据,经过20 km色散光纤传输后下行链路的功率代价为0.2 dBm。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.