5G超密集组网网络架构及实现路径

随着网络信息的不断更新与发展,超密集组网利用基站加密部署提升空间的方式,成为解决5G网络数据流量用户体验速率合理的有效方案.但是,小区密集部署带来的影响和基站小范围的覆盖面积给高速移动用户带来了一些影响,从而减少了网络容量以及用户体验.对此,为了满足5G超密集组网的覆盖和容量问题,主要对5G超密集组网网络架构进行了分析.     

5G超密集组网网络架构及实现

超密集组网通过小基站加密部署提升空间复用的方式,成为解决未来5G网络数据流量1 000倍以及用户体验速率10～100倍提升的有效解决方案.然而,小区密集部署带来的干扰问题以及小基站较小的覆盖范围导致的高速移动用户频繁切换问题,会降低网络容量和用户体验.因此,为了同时考虑未来5G超密集组网“覆盖”和“容量”的问题,提出了以控制承载分离以及簇化集中控制为主要技术特征的5G超密集组网网络架构.除此之外,针对宏-微和微-微的超密集组网部署场景,给出了具体实现方案.更进一步地,针对5G超密集组网网络架构中可能存在的问题与挑战进行了讨论,为后续研究发展提供参考.     

5G超密集网络环境下功率控制方案研究

超密集网络(Ultra Dense Network,UDN)是一种通过密集化地部署各种低功率小基站来提升系统容量的技术,因可以解决小区覆盖盲区、实现用户无缝连接、缓解宏基站压力以及配置灵活等优点被列为未来5G通信系统的关键技术之一。在密集基站的网络部署下,基站与终端的路径损耗有所降低,在增大有益信号的同时也提升了干扰信号,影响通信系统的性能和用户终端的服务质量。为提升用户的服务质量和降低系统损耗,提出了一种跨层功率最大化方案,选取发射功率最强的小基站作为服务基站。提出一种协作功率最大化控制方案,选取2个小基站为用户提供协作式数据传输服务。仿真结果表明,2种方案均能提升用户的服务质量,后者在能效等指标上要优于前者。     

联合传输机制下的三维超密集网络性能分析

超密集网络（Ultra-dense Networks,UDN）作为一项新兴技术，通过密集部署微基站大幅提升了网络容量，近年来受到了广泛关注。但随着二维平面基站数量逐渐饱和，基站部署逐渐向三维（3D）立体化发展。因此，针对中央商务区（Central Business District,CBD）等未来移动通信典型应用场景，基于随机几何理论对写字楼中基站与用户的分布进行建模与分析。该场景下，考虑到实际部署情况，用户只会接收到其上方基站的信号，而忽略低楼层基站的影响。针对这一特点，基于联合传输（Joint Transmission,JT）方案的覆盖性能，推导出用户的覆盖率和遍历容量解析表达式。结果表明，覆盖率和遍历容量都随协作簇的变大而增加，收益呈递减状态。     

无人机通信网络的容量与覆盖性能

无人机搭载通信设备升空作为空中基站,具有灵活机动、部署迅速等特点,合理地部署无人机基站可以有效提升网络的覆盖与容量。与传统的移动通信网络相比,无人机通信网络性能不仅受到无人机基站部署密度的影响,还与无人机的飞行高度有关。通过搭建无人机通信的系统级仿真平台研究了不同场景下无人机通信网络中各参数对网络容量与覆盖能力的影响。仿真结果表明,无人机密度增加,会提升网络容量及覆盖;相同无人机密度下,网络容量随着无人机飞行高度增加先增后减。     

基于实际城区场景的TD-LTE异构网络性能研究

本文对密集城区环境下的实际TD-LTE网络部署进行了研究.通过系统级仿真对宏小区/微小区、宏小区/家庭基站小区、宏小区/微小区/家庭基站小区3种异构网络的下行系统性能进行研究,并与单一宏小区的网络部署场景进行了比较.对实际城区环境下的信号传播损耗模型和用户分布进行了三维空间建模.通过比较4种不同TD-LTE网络部署方案下,位于不同楼层高度室内用户的性能,得出异构网络中不同小区(宏小区、微小区和家庭基站小区)的覆盖和容量特性.     

密集异构网络中基于多目标优化的资源分配策略

密集异构网络(Dense Heterogeneous Network, DHN)通过部署小基站可以提升网络容量和用户速率,但小基站的密集部署会产生巨大的能耗和严重的干扰,进而影响系统的能量效率(Energy Efficiency, EE)和频谱效率(Spectral Efficiency, SE)。在保证用户服务质量(Quality of Service, QoS)需求的前提下,为了联合优化系统的能量效率和频谱效率,研究了密集异构网络中下行链路的资源分配(Resource Allocation, RA)问题。首先,将频谱和小基站发射功率分配问题建模为联合优化系统能量效率和频谱效率的多目标优化问题;其次,提出了基于单策略多目标强化学习(Single-strategy Multi-objective Reinforcement Learning, SMRL)的资源分配算法求解所建立的多目标优化问题。仿真结果表明,与基于单目标强化学习的资源分配算法相比,所提算法可以实现系统能量效率和频谱效率的联合优化,与基于群体智能算法的资源分配算法相比,所提算法的系统能量效率提高了1%～1.5%,频谱效率...     

小基站在LTE异构网络中的应用发展研究

LTE(长期演进)的频段普遍较高,传统建设方式覆盖效果不佳,LTE主要采用异构网络进行深度覆盖和热点容量吸收。而具有多种技术优势的小基站有望成为未来解决LTE异构网络底层覆盖的重要手段。文章首先阐述我国小基站在LTE异构网络中的重要性和现网应用部署情况,接着对比分析小基站与传统建设方式的异同和作用,分析阐述小基站的网络规划和优化,最后分析小基站在LTE网络建设中的应用原则和应用案例。     

LTE网络室内覆盖小基站模式探讨

LTE网络室内覆盖建设是4G网络建设的重点,相比较传统的室内分布系统和光纤分系统,采用小基站模式的解决方案在容量扩充、深度覆盖、灵活部署上有其较为独特的优势,本文就LTE网络室内覆盖特点和方式进行分析,就小基站覆盖的解决方案进行探讨。     

LTE网络典型场景下小微基站部署方案研究

在宏微协同,分层组网的LTE网络中,布局类宏站已基本部署到位,现阶段主要问题为城区深度覆盖问题和热点区域的容量问题,小微基站作为一种有效的解决手段被提了出来.本文介绍了小微基站的定义与分类,并详细说明了在五种典型场景中小微基站的部署方案.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.