基于支持向量机的辐射源识别算法

为了提高电子对抗设备对辐射源的识别能力,采用小波包变换法提取信号的时频谱特征,并引入支持向量机完成对辐射源的分类。小波包变换对信号局部的时频特征具有较好的分辨率,支持向量机分类器结构简单、可获得全局优化、泛化能力强。仿真结果表明,基于支持向量机的辐射源分类方法的正确率优于传统算法。     

基于二维小波变换的激光成像雷达目标识别算法

提出了基于二维小波变换的激光成像雷达目标识别算法,首先对激光成像雷达目标的距离像进行二维小波变换;然后从近似分量和细节分量中提取奇异值特征,利用遗传算法对支持向量机参数进行智能优化;最后应用支持向量机对三种地面目标进行识别.仿真实验表明,该方法与直接应用距离像奇异值特征进行识别的方法相比,在高载噪比20dB时的平均识别...     

基于支持向量机和无源特征的目标识别方法

通过引入机栽雷达辐射这一无源特征.采用多类分类支持向量机进行类型识别,提出了一种更有效的目标识别方法.无源特征是有用信号和噪声的叠加.具有一定程度的不确定性,采用范数熵衡量无源特征,类间距较大,类内聚集性较强,还可以抑制噪声.支持向量机分类器结构简单、可获得全局最优、泛化能力强,多类分类支持向量机解决目标识别问题高效而且实用.实验证明,该方法明显地提高了目标识别的正确率.     

基于离散曲波变换和支持向量机的掌纹识别方法

提出了一种基于离散曲波变换和支持向量机的掌纹识别方法.首先将所有掌纹样本图像和测试图像通过基于Wrapping的快速离散曲波变换进行分解,从而获得不同尺度、不同角度的曲波变换系数;掌纹重要特征信息包含在曲波变换分解系数中的低频系数中,因此将分解系数变换形成特征向量后作为特征参数送入支持向量机中进行学习训练;最后将训练好的支持向量机用于掌纹分类.基于香港理工大学Palmprint掌纹数据库进行了大量实验,实验结果证实所提方法的识别正确率相对优于小波变换方法和其它几种经典方法.     

一种小波核函数的支持向量回归算法及应用

借助谐波小波函数在分析窄带信号方面的性能,利用支持向量回归算法,提出了一种基于谐波小波核函数和支持向量机相结合的谐波小波核支持向量回归算法,实现了小样本情况下微弱信号的精确检测.仿真和实测检测噪声数据的分析表明该算法可以有效地检测出舰船噪声中的线谱信号.     

小波支持向量去噪

噪声对图像质量产生不利影响,降低了图像的应用价值,为了更好的消除图像中的噪声,提出一种小波支持向量去噪方法.首先采集大量的激光散斑图像,并将它们划分成为训练图像集和测试图像集,然后将训练图像集输入到小波支持向量机进行学习,将图像中信号划分为噪声和有用信息,最后采用测试图像集对小波支持向量机去噪性能进行测试与分析.实验结果表明,相比于其它激光散斑图像去噪方法,小波支持向量机可以更加有效的去除噪声,可以很好的保护图像边缘细节信息,提高了激光散斑图像的质量.     

基于PSO-LSSVM的过电压识别

为了获得理想的过电压识别结果,提出了粒子群优化算法优化最小二乘支持向量机参数的过电压识别方法。首先采用小波变换对过电压原始信号进行分解,提取过电压信号的特征量,然后将过电压信号的特征量作为最小二乘支持向量机的输入,建立过电压识别分类器,并采用粒子群优化算法估计最小二乘支持向量机的参数,最后采用实测的过电压数据进行仿真实验,测试其可行性。结果表明,本文方法可以对各种类型的过电压信号进行准确分类和识别,识别结果稳定,且过电压识别率要高于其它方法。     

基于小波变换和支持向量多分类机的光纤布拉格光栅低速冲击定位系统

利用光纤布拉格光栅(FBG)构建传感器网络,结合小波变换、频谱分析和支持向量机分类算法,对碳纤维复合材料板低速冲击区域定位进行了研究。根据划分区域进行冲击试验,探索冲击区域与信号特征之间的关系。在对低速冲击信号进行小波变换去除基线干扰的基础上,采用傅里叶变换提出提取冲击信号幅频特性作为信号特征进行低速冲击区域定位识别的方法,将提取的信号幅频特性作输入、冲击区域类别作输出构建支持向量多分类机实现低速冲击区域定位识别。实验结果表明:在500mm×500mm×2mm的碳纤维复合材料板上对36个测试样本进行低速冲击区域定位识别,实现33个低速冲击区域准确定位,正确率达90%以上,低速冲击定位系统的区域识别精度为40mm×40mm,且每个区域定位时间小于1011ms。研究结果为碳纤维复合材料板的低速冲击区域定位检测提供了一种科学可靠的方法。     

基于双谱分析和支持向量机的 手震颤加速度信号识别

 针对目前临床上对特发性、帕金森病、生理性等3种常见震颤误诊断的问题,本文提出了一种基于双谱分析和支持向量机识别3种不同类型震颤的新方法.首先测量3种震颤类型志愿受试者手震颤的加速度信号并分别对其用Hinich方法检验,发现该类信号具有非高斯、非线性特性,然后用适合处理该类信号的双谱分析方法提取手震颤加速度信号的双谱对角切片的特征信息,最后采用"一对一"和"一对多"两种多分类的支持向量机算法对受试人的手震颤特征进行分类.交叉验证表明"一对一"算法的平均分类正确率高于"一对多"算法,分类正确率最高达到93.13%.该方法为临床医生提供了辅助识别不同类型震颤的新途径.     

基于小波包分析的辐射源特征提取和识别算法

提出了一种基于小波包的变换方法。该方法通过对不同脉内调制方式进行频带能量的提取,并引入支持向量机来完成对辐射源的分类。该小波包变换对信号局部的时频特征具有较好的分辨率。仿真结果表明,文中的小波包变换信号时频特征的分析精度优于传统算法。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.