基于链接相似性聚类的重叠社区识别

社区结构是社会网络最普遍和重要的拓扑属性之一,提出一种基于链接相似性聚类的重叠社区识别算法.该算法首先根据相邻链接的度分布状态,提出链接间的相似性度量方法;其次以链接相似性矩阵为输入,以链接社区的最优划分为目标,建立链接局部相似性聚类算法,实现了重叠社区的有效识别;然后对链接社区进行优化,解决了可能出现的过度重叠及孤立社区问题;最后在真实网络及人工合成网络上的实验验证了算法的高效性.     

基于影响力与种子扩展的重叠社区发现

社区发现作为复杂社交网络中一个重要的研究方向.针对目前基于种子节点的算法在种子选取与扩展等方面的不足,提出了一种基于影响力与种子扩展的重叠社区发现算法（Influence Seeds Extension Overlapping Community Detection,简称i-SEOCD算法）.首先,利用节点影响力策略找出具有紧密结构的种子社区.其次,从这些种子社区出发,计算社区邻居集节点与社区的相似度,并取出相似度超过设定阈值的节点.然后,采用优化自适应函数的策略来扩展社区.最后,对网络中的自由节点进行社区隶属划分,进而实现了整个网络的重叠社区结构挖掘.在真实社交网络和人工生成网络上实验表明,i-SEOCD算法能够准确、快速地发现复杂网络中的重叠社区结构.     

基于语义路径的异质网络社区发现方法

社区发现是社会网络研究的热点问题,综合利用社会网络中不同对象间的异质信息,可以更加有效地挖掘网络中的社区结构。针对传统的社区发现方法无法有效地利用异质信息的问题,本文提出了一种基于语义路径的异质网络社区发现方法,该方法首先定义网络中的语义路径,通过语义路径来衡量不同类型对象间的异质信息相似度,然后以此构造可靠性矩阵,作为半监督非负矩阵分解的正则化约束项,进而实现异质网络的社区划分。在真实数据集上的实验结果表明,所提出的方法能够更准确地发现异质网络中的社区结构。     

一种基于边界节点识别的复杂网络局部社区发现算法

在网络日益巨大化和复杂化的背景下,挖掘全局网络的社区结构代价较高。因此,基于给定节点的局部社区发现对研究复杂网络社区结构有重要的应用意义。现有算法往往存在着稳定性和准确性不高,预设定阈值难以获取等问题。该文提出一种基于边界节点识别的复杂网络局部社区发现算法,全面比较待合并节点的连接相似性进行节点聚类;并通过边界节点识别控制局部社区的规模和范围,从而获取给定节点所属社区的完整信息。在计算机生成网络和真实网络上的实验和分析证明,该算法能够自主挖掘给定节点所属的局部社区结构,有效地提升局部社区发现稳定性和准确率。     

融合节点分析与边分析的复杂网络社区识别算法

针对边社区识别与节点型社区识别两类算法在识别社区过程中均存在相应缺陷,影响复杂网络社区识别质量的问题,提出融合节点分析与边分析的复杂网络社区识别（CDHNE）算法。该算法首先运用边在网络中较为稳定的特点,在算法执行初期通过边社区识别构建较为准确的社区结构;然后利用节点较为灵活的特点,在边社区形成后,对边社区的边缘进行精确识别,更准确地识别出复杂网络中的社区结构。在计算机生成网络实验中,当网络的社区结构逐渐变得模糊、重叠节点数量与重叠节点归属社区数量不断增加时,CDHNE算法的社区识别精度较传统算法平均提高10%,在重叠节点识别精度上较传统算法平均提高15%;在真实网络实验中,算法识别的社区结构紧密度较好,特别是面对拥有十几万个节点的大规模网络时,CDHNE算法高质量地完成了识别任务,EQ值达到0.412 1。实验结果表明,CDHNE算法在运行稳定性和处理大规模网络方面具有优势。     

识别稳定的局部社区结构算法

通过提取出具有高链接密度的局部团,从局部团出发进行扩展社区,设计自动选择社区扩展的终止条件,以保留最优社区结构,提出一种社会网络局部社区识别算法。在人工生成网络和真实网络上的实验结果表明,与同类算法相比,该算法能够识别出稳定的局部社区结构,提升了局部社区识别结果的准确率。     

网络社区发现优化：基于随机游走的边权预处理方法

在网络日趋复杂化、巨大化的背景下,仅依靠网络拓扑特征难以提高现有社区发现算法的精确度和性能。该文提出一种优化网络社区发现的边权预处理方法,基于马尔可夫随机游走理论建模社区结构对复杂网络行为的影响,根据多重随机游走对网络连接的遍历情况,重新衡量网络边权。预处理后的边权作为网络拓扑的有效补充信息,能够将网络社区结构去模糊化,从而改善现有算法的社区发现性能。对于一些典型的计算机生成网络和真实网络,经实验验证：该预处理方法能够有效提升现有部分社区发现算法的准确性和效率。     

属性网络中相似性增强随机游走的多社区搜索

社区搜索旨在寻找与给定查询节点高度相关的个性化社区.现有社区搜索方法多面向简单网络且处理单个查询节点或假定多个查询节点来自同一社区,这种严格的假设使得算法灵活性受限.据此,提出一种在属性网络中利用查询节点随机游走路径的相似性增强的多社区搜索方法,可以有效地定位查询节点所属的多个局部目标社区.具体地,有效融合网络中高阶结构与属性信息,利用重启随机游走计算各查询节点的重要性分数向量;计算查询节点随机游走路径的相似性并设计一种相似性增强策略,使得在无监督学习中相似路径游走者彼此增强关联从而定位不同查询节点所属的多个社区结构;基于结合结构和属性的并行电导值精准查询社区.真实数据集和人工数据集的实验验证了本文方法的有效性和效率.     

基于结构紧密性的重叠社区发现算法

随着网络结构的不断扩大和日益复杂,传统的重叠社区发现算法已经不能有效地处理大规模网络数据,发现合理的社区结构.本文提出了顶点引力的概念,引入顶点凝聚度和社区凝聚度作为满足社区的外部结构稀疏性和社区内部结构紧密性的判定指标,构造了基于结构紧密性的重叠社区发现算法OCSC.该算法经过预处理,核心子图划分以及核心社区的扩展三个步骤,能有效地发现重叠社区,通过对人工合成网络和真实网络结构的社区发现实验,运用NMI和F1Score等指标验证OCSC算法的合理性和优越性.     

社区机会网络路由性能提升策略

在社区机会网络中由于网络资源的限制,节点的缓存、能量、带宽等属性会严重影响网络的性能。现有的社区机会网络路由算法往往只根据节点的中心性级别来进行副本的分配,而并没有充分考虑上述属性的影响。针对这一问题,本文提出一种结合节点属性与中心性的路由算法WRACS。该路由算法既考虑了影响节点传输能力的各种属性,又结合了节点的活跃程度。最后通过ONE仿真分析可知,该算法在信息投递率,平均延时和平均缓存时间等性能指标上都体现出良好的性能。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.