塑封微电路筛选鉴定和DPA技术的研究

由于塑封器件结构和材料等因素,存在非气密性、易受温度形变等特有潜在缺陷.有效的筛选和鉴定已经成为检验塑封微电路(PEMs)质量和提高应用可靠性的关键.DPA作为产品质量检验与可靠性评价技术,能提供PEM生产与设计、工艺和制造缺陷的信息.介绍了一套筛选、鉴定和DPA技术相结合的PEMs产品保证方法,可以作为向高可靠性要求用户提供高质量PEMs的主要评价手段.     

塑封器件失效机理及其快速评估技术研究

针对影响塑封器件可靠性的五种失效机理,即腐蚀失效、爆米花效应、低温/温冲失效、闩锁以及工艺缺陷等方面进行分析和讨论,并提出利用高温潮热和温度冲击试验对塑封器件的可靠性进行评估.还介绍了美国航天局Goddard空间飞行中心提出的对塑封器件进行高可靠性筛选的方案.     

塑封半导体器件的可靠性保证措施

为了降低塑封半导体器应用于高可靠性产品领域中的质量风险,采用质量细化分析方法,针对塑封半导体器件本身在材料、结构等方面的特点,做了塑封半导体器件失效模式与机理的原理探讨。得出器件应用于产品前,应该进行温度适应性评估、二次筛选以及破坏性物理分析等先期工作。     

集成电路封装用绝缘胶漏电失效分析

在电子元器件封装领域中,塑封器件正逐步替代气密性封装器件。目前工业级塑封器件已不能满足器件的高可靠性要求,工业级塑封器件在严酷的环境应力试验中经常出现失效。研究了工业级塑封器件在可靠性筛选试验中出现失效的问题,通过X射线观察和芯片切面分析等方法,查明了造成器件失效的原因,并提出了优化改进措施。     

塑料封装可靠性问题浅析

塑料封装器件在现在的封装产业中具有无可比拟的优势,诸如成本、可靠性、尺寸以及重量等。但是还是有相当一部分人对于塑封器件的可靠性持怀疑态度。文章的目的就是使读者能够更深入地了解到塑封器件的可靠性,尤其是在塑封器件应用于高可靠性的要求时,这个问题显得至关重要。文章总结了现阶段对可靠性问题研究的成果与进度,并且在生产、测试以及应用储存等方面提供了一定的思路。     

声学扫描技术在高可靠领域塑封器件检测中的应用

为了提高塑封器件在高可靠应用领域的可靠性,需要使用扫描声学显微镜检测塑封器件内部界面分层、空洞和裂纹等缺陷。介绍了扫描声学显微镜的工作机理和几种主要扫描模式。综合分析了大量检测实例,指出塑封器件内部典型缺陷的特点和辨别方法,对扫描声学显微镜在塑封器件无损检测方面具有参考意义。此外,对现行的扫描声学显微镜检测塑封器件的检测标准提出了改进建议。     

声扫检测中易误判的塑封器件的验证方法

塑封器件在高可靠性领域应用越来越广泛,为了降低使用风险,很有必要进行相应的检测或筛选,扫描声学显微镜检查就是其中一种很重要的无损检测手段。但是,在进行声扫时,对于某些最新的封装方式,需要特殊情况特殊分析,以避免因为器件的封装形式而非器件的缺陷拒收产品。在电子封装设计时,芯片表面可能涂覆一层有机材料来保护集成电路。但这种材料声扫结果往往与真正的分层一样显示为负波,容易误判为不合格。就这种结构及其声扫结果提出了几种验证方法。     

塑封器件的外部目检方法与判据研究

目前,塑封器件由于其在尺寸、重量、成本、可用性和性能,以及工艺和设计方面的先进性,使得其在高可靠性领域中的应用越来越广泛,国内已有相当数量的塑封器件应用于国防领域。但是,其外部目检试验项目所依据的方法与判据仍然沿用气密性封装器件外部目检的方法与判据,已经不能满足日益增多的塑封器件的外部目检筛选要求。结合GJB 548B-2005的方法 2009.1外部目检要求,开展塑封器件外部目检试验方法与判据的研究。     

基于超声扫描的塑封器件缺陷判定方法研究

超声扫描检测因为其灵敏度高、对样品没有损伤的特点,被广泛地应用到塑封器件的筛选和检测中,但是目前不存在一个完整的超声扫描检测方法。对塑封器件缺陷进行分析,提出一种塑封器件缺陷的超声扫描检测方法。该方法采用A扫描与C扫描检测塑封器件内部的缺陷,其过程为塑封体缺陷检测与重要界面缺陷检测。与现有GJB 4027A要求的聚焦6个重要界面的检测方法相比,本方法只需要聚焦两个界面即可观察到6个界面的情况,可以提升检测效率。     

塑封器件宇航应用的质量保证方法

由于技术进步的需要,航天器不可避免地遇到了选用不到高等级器件、而只能选用商用塑封器件的情况,商用塑封器件的质量保证方法是国内外宇航机构研究的热点问题。在分析商用塑封器件设计、生产特点的基础上,针对其特有的失效模式,给出了商用塑封器件的质量保证方法,为航天器应用商用塑封器件提供借鉴和指导。     

FIB与PEM联用在半导体器件失效分析中的应用

在半导体器件的失效分析中,缺陷定位是必不可少的重要环节.光发射显微镜(PEM)是IC失效定位中最有效的工具之一.PEM利用了IC器件缺陷在一定条件下的发光现象,迅速定位缺陷.而聚焦等离子束(FIB)的定点切割和沉积技术在亚微米级半导体工艺失效分析中扮演着越来越重要的作用.介绍了一种联合使用FIB和PEM进行亚微米级缺陷定位的新方法,使得一些单独使用PEM无法完成缺陷定位的案例得以成功解决.     

A case study of defects due to process marginalities in deep sub-micron technology

The difficulties in identifying the precise defect location and real leakage path is increasing as the integrated circuit design and process have become more and more complicated in and below deep sub-micron technology node. Most of the defects causing chip leakage are detectable with only one of the failure analysis (FA) tools such as liquid crystal detection (LCD) or photon emission microscope (PEM). However, due to process marginalities some defects are often not detectable with only one FA tool [Hung-Sung Lin, Wen-Tung Chang, Chun-Lin Chen, Tsui-Hua Huang, Vivian Chiang, Chun-Ming Chen. A study of asymmetrical behaviour in advanced nano SRAM devices. In: 13th IPFA proceedings; July 2006. p. 63–6; Kruseman Bram, Majhi Ananta, Hora Camelia, Eichenberger Stefan, Meirlevede Johan. Systematic defects in deep sub-micron technologies. ITC international test conference, 2004. p. 290–9.]. This paper present an example of an abnormal power consumption process related defect which could only be detected with more advanced FA tools.     

Failure analysis from the back side of a die

A back side failure analysis flow has been developed in order to enable failure analysis of flip-chip, lead-on-chip dies and within multi-metal-level dies. A combination with frontside failure analysis methods is possible too. The back side flow consists of stepwise bulk silicon removal, electrical and physical failure analysis methods. Four different methods for bulk silicon thinning in order to localize electrical defects using photoemission microscope (PEM) are compared. A method to remove the bulk silicon after PEM analysis to expose the gate oxide level of a die has been developed. Different back side applications like physical analysis of gate oxide defects, passive voltage contrast and microprobing with an atomic force microscope tip for detection of interrupts within interconnect lines are described.     

Alloyed Pt Single-Atom Catalysts for Durable PEM Water Electrolyzer

The high cost of noble metals is one of the key factors hindering the large-scale application of proton exchange membrane (PEM) water electrolyzer for hydrogen production. Recently, single-atom catalysts (SACs) with a potential of maximum atom utilization efficiency enable lowering the metal amount as much as possible; unfortunately, their durability remains a challenge under PEM water electrolyzer working conditions. Herein, a highly-stable alloyed Pt SAC is demonstrated through a plasma-assisted alloying strategy and applies to a PEM water electrolyzer. In this catalyst, single Pt atoms are firmly anchored onto a Ru support via a robust metal–metal bonding strength, as evidenced by these complementary characterizations. This SAC is used in a PEM water electrolyzer system to achieve a cell voltage as low as 1.8 V at 1000 mA cm⁻². Impressively, it can operate over 1000 h without obvious decay, and the catalyst is present in the form of individual Pt atoms. To the knowledge, this will be the first SAC attempt at a cell level toward long-term PEM. This work paves the way for designing durable SACs employed in the actual working condition in the PEM water electrolyzer.     

Performance improvement of Si-CCD detector based backside reflected light and photon emission microscopy by FIB ultimate substrate thinning

In FA laboratories a significant number of photon emission microscopy (PEM) systems are equipped with the most common detector, namely cooled Si-CCD camera. Backside reflected light microscopy (RLM) and photon emission microscopy (PEM) using this detector are possible but strongly limited by the interaction of light with silicon substrate. In this work, we show the improvement of the RLM and PEM performed from the chip backside using standard cooled Si-CCD camera by localized focused-ion-beam (FIB) assisted silicon substrate removal. Thinning down the silicon substrate significantly improves signal-to-noise ratio of the techniques as well as their resolving properties. It also enables extended spectral analysis, also in the visible regime of the light spectrum. This study has been done using 120 nm technology process test structures.     

TFT LCD常见点缺陷的检测与修复

TFT—LCD在制程中会产生亮点、暗点、闪点、碎亮点等常见点缺陷。说明了检测点缺陷的装置、方法和过程。采用ITO隔离、激光炸射等方法对点缺陷进行修复或者淡化,其中ITO隔离法修复或淡化效果显著。修复成功率从45％提升到80％。     

Failure mechanisms in advanced BCD technology during reliability qualification

During the qualification of a new Advanced Bipolar, CMOS, DMOS (A-BCD) technology some typical failure modes were observed in this SOI process. After a short introduction of the technology and its areas of application three different failure modes will be discussed. The failures initiated during HTOL test are localized with standard PEM/OBIRCH analysis techniques. Main focus will be on the physical defects at the origin of the fail and the different techniques to reveal them. The failures are observed within the Shallow Trench Isolation (STI) module of the High Voltage components and along the edge of the Medium Trench Isolation (MTI). The root causes and the possible corrective actions will be discussed when applicable.     

Demonstrated reliability of plastic-encapsulated microcircuits formissile applications

For the past decade, overall reliability improvement and product availability have enabled plastic encapsulated microcircuits (PEM) to move from consumer electronics beyond the relatively large and reliability-conscious automotive market, into the military market. Based on the analysis of the worst-case PEM scenario for military applications, demonstrating the moisture reliability under long-term (20 years) dormant storage environments has become the last hurdle for PEM. Studies have demonstrated that PEM can meet the typical missile environments in long-term storage. To further validate PEM reliability in missile applications, Texas Instruments (TI) conducted three separate studies involving 6 years of PEM moisture-life monitoring and assessment, testing of the standard PEM electrical characteristics under the military temperature ranges (-55°C to +125°C), and assessing their robustness in moisture environments after the assembly processes. These TI studies support the use of PEM in missile (or similar) applications. Effective focus on part and supplier selection, supplier teaming, and process monitoring is necessary to maintain the PEM reliability over the required environments at the lowest cost. This paper assesses PEM reliability for a selected missile storage environment using the industry-standard moisture testing, such as biased HAST or 85°C/85%RH (relative humidity), for demonstrating the PEM moisture survivability. The moisture reliability (MTTF) or average moisture lifetime of PEM is assessed to correlate PEM capability to anticipated field-performance environments     

LCD点状缺陷分析与研究

LCD作为一个新兴的高科技光电产业,现已几乎全面取代CRT显示器而成为主流显示器。但是LCD生产流程复杂,生产过程中会出现各种缺陷,使得良品率下降并造成成本增加。文章通过对两种典型点状缺陷样品的实验观测,结合外推长度理论及长程扰动理论,论证了不同缺陷核心对周围液晶分子产生的不同影响。