聚焦离子束(FIB)的透射电镜制样

亚微米IC芯片的发展,对于TEM在IC的失效分析和工艺监控过程中所担负的工作提出了越来越高的要求。许多方法和手段被用于解决TEM制样这个问题[1]。FIB技术被证明为现今最有效的精确定位制样的方法[2]。原有TEM制样技术的定位减薄难,单次制样成功率低,且对单一器件的定位能力差的难题,可通过电视监测和聚焦离子磨削的方法加以克服。利用这种技术,可以完成以往难以实现的IC芯片的精密定位制样工作,使透射电镜在亚微米级IC的分析中达到实用性阶段。本文介绍该技术使用的具体方法。实验过程实验所用设备为美国fei.公司所生产的FIB200型…     

PEM用于半导体器件失效缺陷检测和分析

光发射显微镜(PEM)是90年代发展起来的一种高灵敏度、高分辨率的新型缺陷定位分析技术.随着半导体器件线宽的不断下降,光发射显微镜已广泛使用于IC和分立器件中漏电、击穿、热载流子等失效点的定位和失效机理的分析.本文介绍了光发射显微镜及在半导体器件进行失效分析的机理和实际应用.     

电压衬度像技术在IC失效分析中的应用

电压衬度像(PVC)技术是用于定位集成电路不可见缺陷的一种有效的失效分析方法,结合聚焦离子束(FIB)精准的微切割技术,可将PVC技术应用于长金属互连线的缺陷定位.主要介绍了PVC技术及其原理,概述了如何在SEM和FIB中应用其工作原理有效地定位IC缺陷位置,并就接触孔/通孔缺陷以及规则长金属导线的失效实例展开讨论和分析.     

电源管理IC失效模式验证及定位方法

电源管理集成电路(IC)的自动测试机(ATE)测试故障主要包括连续性失效、直流参数测试失效、交流参数测试失效和功能测试失效.ATE测试适用于大规模量产的不良产品的筛选,但是将ATE测试结果直接应用于失效分析依然存在覆盖局限性问题.针对不同功能测试结果,采用了不同的失效模式验证和分析方法.综合运用I-V曲线测试仪、示波器、函数发生器等仪器进行失效模式验证;使用微光显微镜、光诱导电阻变化仪器进行缺陷的失效定位;并借助电路原理图、版图进行故障假设;分析由过电应力、静电放电损伤、封装缺陷等导致的物理损伤;最终揭示了电源管理IC功能失效的主要原因.     

功率器件漏电流的PEM定位和分析

光发射显微镜(PEM)系统是应用于微电子器件漏电流定位和分析的有效工具。利用PEM系统的激光光束诱导阻抗变化(OBIRCH)功能和光发射(EMMI)功能,从正面可直接对功率器件大的漏电流进行定位观察。利用PEM的EMMI功能,还可从背面对器件微弱的漏电流进行定位和分析。介绍了PEM系统对功率器件芯片不同量级的漏电流进行定位与分析的应用,为分析功率器件漏电流失效提供依据。     

聚焦离子束(FIB)技术及其在微电子领域中的应用

FIB是一种将微分析和微加工相结合的新技术，在亚微米级器件的设计、工艺控制和失效分析等诸多领域发挥着非常重要的作用。本文将对聚焦离子束技术及其分析、加工的机理和性能作一介绍，并对该技术在微电子领域中的应用及发展作一综述。     

集成电路封装级失效及其定位

失效分析中有许多类型的封装级失效.由于封装材料限制或者无损检测要求,无法从外观直接观察到失效点,需要借助于设备进行失效定位才能快速、准确地进行分析.总结了集成电路封装级失效的几种常见失效机理和失效原因,提出三种有效的分析手段和分析方法进行失效定位:X射线检测、超声扫描声学显微镜以及热激光激发光致电阻变化(OBIRCH)技术,分别用于元器件结构观察、不同材料界面特性分析和键合损伤位置定位.从倒装芯片封装、陶瓷封装、塑料封装和金铝键合短路四个失效分析的实际案例出发,阐明三种封装级失效定位手段应用的领域、特点和局限性.结果表明在封装级失效中,通孔断裂开路、焊料桥连短路、键合损伤和界面分层等缺陷能够准确地被定位进而分析.     

动态电子束探针检测技术在亚微米和深亚微米IC失效分析中的应用研究

对扫描电子显微镜静态/动态/电容耦合电压衬度像、电子束感生电流像、电阻衬度像在亚微米和深亚微米超大规模集成电路中的成像方法和成像特点进行了研究,对各种分析技术在失效分析中的应用进行了深入的探讨,为电子束探针检测技术在亚微米和深亚微米集成电路故障定位和失效机理分析中的应用提供了理论基础和实践依据.     

由版图引起的CMOS ESD保护电路失效的分析

ESD保护电路已经成为CMOS集成电路不可或缺的组成部分,在当前CMOS IC特征尺寸进入深亚微米时代后,如何避免由ESD应力导致的保护电路的击穿已经成为CMOS IC设计过程中一个棘手的问题.光发射显微镜利用了IC芯片失效点所产生的显微红外发光现象可以对失效部位进行定位,结合版图分析以及微分析技术,如扫描电子显微镜SEM、聚焦离子束FIB等的应用可以揭示ESD保护电路的失效原因及其机理.通过对两个击穿失效的CMOS功率ICESD保护电路实际案例的分析和研究,提出了改进ESD保护电路版图设计的途径.     

UMOSFET功率器件漏电失效分析及工艺改善

针对U型沟槽MOSFET (UMOSFET)功率器件栅极和源极间发生漏电失效的问题,对失效器件进行了电学测试和缺陷检测,对失效现象和失效机理进行了分析,并进行了相关工艺模拟和工艺实验.采用透射电子显微镜(TEM)、扫描电子显微镜(SEM)和聚焦离子束(FIB)对失效芯片的缺陷进行分析和表征.结果表明,器件的U型沟槽底部栅氧化层存在的缺陷是产生漏电的主要原因,湿氧工艺中反应气体反式二氯乙烯(Trans_LC)的残留碳化造成了芯片栅氧层中的缺陷.通过工艺模拟和实验,优化了湿氧工艺条件,工艺改进后产品的成品率稳定在98％ ～ 99％,无漏电失效现象.     

新一代微分析及微加工手段——聚焦离子束系统

聚焦离子束 (FIB)技术是 90年代发展起来的具有微细加工和微分析组合功能的新技术。随着集成电路线宽的不断减小 ,集成度不断提高 ,该技术已在微电子工业中被广泛应用 ,其优势也日益显现。文中主要对FIB系统的构成作较为详尽的介绍 ,同时也涉及该技术的应用和发展。     

The use of the focused ion beam in failure analysis

Since the introduction of the Focused Ion Beam (FIB), many applications have been developed. This article deals with a stand alone FIB in a failure analysis laboratory where it is used for material characterisation and sample preparation. In this paper examples will be given of FIB applications as used for failure analysis and process monitoring of semiconductor devices.     

Local thickness and composition analysis of TEM lamellae in the FIB

High-resolution TEM image quality is greatly impacted by the thickness of the TEM sample (lamella) and the presence of any surface damage layer created during FIB–SEM sample preparation. Here we present a new technique that enables measurement of the local thickness and composition of TEM lamellae and discuss its application to the failure analysis of semiconductor devices. The local thickness in different device regions is accurately measured based on the X-ray emission excited by the electron beam in the FIB–SEM. Examples using this method to guide FIB–SEM preparation of high quality lamellae and to characterise redeposition are shown for Si and III–V semiconductor devices.     

基于SEM电压衬度的缺陷定位方法研究

光发射显微分析、光致电阻变化技术两种电失效定位方法在精确定位缺陷上存在局限性,为此提出了基于SEM电压衬度的联用方法用于精确定位集成电路缺陷。首先根据电特性测试进行光发射显微分析或者光致电阻变化分析,结合电路原理和版图,提出失效区域的假设,再进行电压衬度像分析,通过衬度翻转可精确和快速确定缺陷位置,最后通过FIB或者TEM对缺陷进行表征。案例研究显示,有源电压衬度可定位双极型电路铝金属化开路失效,无源电压衬度定位CMOS电路多晶硅栅刻蚀异常引起的漏电流失效,结合形貌和材料分析得出缺陷形成机理和根本原因。     

Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET

The purpose of this paper is to describe an approach of short circuit ageing allowing further microstructural analysis that is needed for the identification of failure mechanisms. So far, few relevant studies on SiC MOSFET SC robustness tests have been described putting in light the need for complementary information on physical mechanisms involved in failure modes. A large part of this work is dedicated to a new approach of SC robustness tests. Following ageing, using PEM (Photo Emission Microscopy) technique, SEM (Scanning Electronic Microscopy), and FIB (Focus Ion Beam) cutting, the study successfully correlates electrical measurements and structural analyses for an elementary cell of SiC MOSFET power transistor.     

Failure analysis method by using different wavelengths lasers and its application

We succeeded in an accurate detection for failure locations on a silicon semiconductor device (hereafter called “IC”) by applying the failure analysis method in which two kinds of laser beams having different wavelengths are simultaneously irradiated on a surface of IC. Short wavelength laser beam (λ=1083nm) causes potential changes in an internal circuit of IC due to generating many electron-hole pairs in the semiconductor. On the other hand, long wavelength laser beam (λ=1360 run) causes an easy operation of parasitic bipolar elements due to increasing temperature of IC by irradiation heat. By combining these effects of two laser beams, the accurate detection of latch-up locations on internal circuits of IC (has been recognized to be difficult up to now) has come possible.     

Application of Fast Laser Deprocessing Techniques on large cross-sectional view area sample with FIB-SEM dual beam system

Cross-sectional analysis is one of the important areas for physical failure analysis. Focus Ion Beam (FIB) and mechanical polish sample preparation are commonly used and necessary techniques in the semiconductor industry and Failure Analysis (FA) Company (Wills and Perungulam, 2007). However, each technique has its own limitation. Mechanical polishing technique easily induces artifact by mechanical force, especially on advance technology node. FIB can eliminate mechanically damaged artifact, but have the limitation on cross-sectional view area. Another potential technique will be plasma FIB, it used very high milling current and fast milling speed (Hrnčíř et al., 2013). However, it comes with a very high cost and having the contamination issue. The contamination issue greatly affects the low kV Scanning Electron Microscopy (SEM) imaging quality. In recent semiconductor industry FA, low kV SEM imaging is preferable, because high kV imaging will introduce delamination artifacts especially on organic material from packaged sample. In this paper, Fast Laser Deprocessing Techniques (FLDT) application is further enhanced on large area cross-sectional FA with fast cycle time and low-cost equipment. This is to prevent from mechanical damage. In short, the proposed FLDT is a cost-effective and quick way to deprocess a sample for defect identification in cross-sectional FA.     

一种GaAs PHEMT器件的失效分析

随着Ga As PHEMT(赝配高电子迁移率晶体管)器件的广泛应用,器件的可靠性及失效分析方法越来越受到人们的重视。该文采用半导体参数分析仪、聚焦离子束(FIB)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、能谱仪(EDX)等分析方法对一种PHEMT器件进行失效分析,为实际生产和加工过程中的失效分析提供了参考。