计算机技术与高校体育教学的整合分析

随着我国教育部门的改革,国家对于高校的体育教育工作也越来越予以重视。由于在体育教学中存在着大量的抽象化理念,就采用以计算机来作为高校的辅助教学工具。通过计算机技术以及高校体育教学的相结合,体现出了计算机技术在我国的高校体育教学中的优越性,并且利用计算机所带来的创设性教育环境,从而使得学生能够更好的对体育学习进行立意,学习其中较好的技术动作,培养其战术意识。     

高校羽毛球训练机能监控系统构建

结合高校体育教学实际,应用现代计算机技术、数据库技术,构建了比较适用于高校羽毛球体育教学的训练技能监控预警系统。该系统主要包括学生基本信息、身体技能状态监控、训练负荷监控、数据录入与查询等,并通过该系统实现了高校学生羽毛球选修课训练的身体技能监控。     

探讨多媒体信息技术在高校体育教学中的运用

近年来互联网技术飞速发展,计算机全面普及,信息化技术已经深入到诸如军事、教育等众多领域,对于高校教学来说,信息化同样是其发展的大趋势。高校体育课是改善学生体质、帮助学生树立正确精神态度的课程,随着社会发展,传统体育教学中教师教授学生被动接受的教学方法已经很难满足需求,在高校体育教学中运用信息化技术同样是大势所趋。通过信息化技术在高校体育教学中的运用,促进多媒体信息技术和大学体育的有机融合,紧随高校教育发展的脚步。本文将就多媒体信息技术在高校体育教学中的运用展开探讨。     

电子信息技术背景下的高校体育教学

针对利用电子信息技术进行高校体育教学,可有效提高教学效率。计算机多媒体技术的应用,可有效提高学生的兴趣、优化课堂教学提高教学的质量。文中对电子信息技术在当前高校体育教学中的应用意义进行分析,并在此基础上提出了建议。     

基于虚拟现实技术的体育教学模式探究

虚拟现实技术是计算机仿真领域里的新型学科,并成功应用于各个领域。在高校体育教学中应用这一先进的计算机虚拟技术,无疑会对教学课堂带来风暴式的变化。本文主要利用三维图像建模技术、模型驱动技术、视觉跟踪与视点感应技术以及立体声合成等技术,构建了基于虚拟现实技术的新型体育教学模式,从而为体育教学质量的提高提供可靠性依据。     

民办高校音乐专业二胡选修课程教学改革探析

民办高校音乐专业二胡选修课程教学是高校器乐教学的一部分,当前形势下,有其特殊性,也存在较多问题。为了进一步提高民办高校二胡选修教学的质量,达到人才培养的要求,教师必须进行教学形式、课堂教学、教材建设等方面的革新,将二胡选修课程的教学推上一个新的高度。     

运用现代教育技术手段优化体育课教学的探究

计算机网络技术与信息技术在当今现代信息社会时代发展十分迅速，现代信息技术已经对很多行业产生深远影响，当然也包括教育行业，运用现代教学技术方式不断对高校体育课教学进行优化，已经成为各高校的主要研究课题。现代化教育技术手段不仅能够优化高校体育教学结构、知识体系，还能一定程度提高大学生对体育的兴趣和学习的积极性。在如今现代教育技术手段不断发展的时代，如果高校体育教师还使用传统的教学方式进行授课，不仅影响教学效果，还会让大学生逐渐失去对体育课堂的兴趣。本文首先总结高校体育教学采用现代教育技术方法的优势，然后对运用现代教育技术手段对体育课教学优化这一课题进行探究。     

多媒体技术在高校体育教学的实践

随着信息技术的高速发展和素质教育的不断深入,多媒体信息技术越来越多的被用于高校的体育教学中,多媒体技术融入高校体育教学,必将引起高校体育教学的新一轮变革。但是多媒体技术在高校体育教学实践过程中还存在着诸多问题、与不足之处。本文主要研究多媒体技术在高校体育教学中的重要作用,并针对高校体育教学在运用多媒体技术过程中所存在的问题,寻求相应的解决措施。     

基于三维图像技术的高校体育多媒体教学平台设计

文中从当前高职院校体育教学的周期短、学时少、教学方法单一的特点出发,充分利用现代计算机网络多媒体技术,设计一套符合高职院校体育教学的基于三维图像技术的高校体育多媒体教学平台,并对平台设计和三维课件设计进行了详细的介绍,为高职院校创新体育教学模式,提高教学质量提供有力借鉴。     

计算机信息技术在高校计算机实验室建设中的应用

计算机信息技术发展促使高校的课程设置与计算机教学具有非常大的关联性,计算机教学也成为了高校教学的基础性课程。高校在进行教学过程中,高校需要更加注重实验室建设,提升学生计算机的实际操作能力。本文对目前高校计算机实验室建设与管理存在的问题做了分析,提出了更加具有针对性的解决对策,为高校计算机实验室建设与管理打下良好的基础。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.