用于平场光谱仪的非球面全息凹面光栅设计

基于全息凹面光栅理论和ZEMAX软件,设计了一种用于平场光谱仪的消象差平场非球面全息凹面光栅。与采用相同口径、相同相对孔径的全息凹球面光栅构成的平场光谱仪比较,在入射狭缝宽度相同的情况下,该光栅所构成的平场光谱仪的分辨率得到明显提高。同时,利用较大相对孔径非球面全息凹面光栅,可使平场光谱仪的结构更紧凑,从而可实现平场光谱仪的小型化。     

平场全息凹面光栅的设计

介绍一种从罗兰圆结构出发,利用ZEMAX光学软件设计平场全息凹面光栅的方法。此设计方法简便,在兼顾平场和提高分辨率方面效果显著。最后给出了一个设计实例,并对设计结果进行了分析和评价。     

球差在平场全息凹面光栅设计中的作用

基于平场全息凹面光栅几何像差理论,分析了初级像差与高阶像差特别是球差对平场全息凹面光栅成像的作用。通过一个具体的设计,分别讨论宽波段光栅和窄波段光栅设计中校正球差与否对设计结果的影响。通过对光谱像大小和各种像差系数大小进行对比分析得出以下结论:宽波段平场全息凹面光栅像差较大,决定光谱像大小的主要是初级像差,球差的影响难以显现,在进行光栅设计时可以不考虑球差;窄波段光栅的离焦像差较小,球差的影响开始变得显著,此时在设计过程中考虑球差的校正能够进一步改善光栅的成像质量。     

窄波段高分辨率平场全息凹面光栅的一种简单设计方法

给出利用 型全息凹面光栅的无离焦和消彗差特性 ,设计窄波段高分辨率平场全息凹面光栅的一种简单方法。详细讨论了该光栅的优化设计 ,并给出设计实例及数值评估结果。     

宽波段全息罗兰光栅的优化

罗兰光栅存在的主要像差是像散和弧矢彗差,影响其光通量和光谱分辨率。根据凹面全息光栅的几何像差理论,分析了记录光源点在罗兰圆外所制作的全息罗兰光栅的宽波段像差特性。发现像散和弧矢彗差能够在两个波长处被同时消除;并且在两波长之间的波段范围内,像散和弧矢彗差相对传统光栅均得到明显改善。基于此像差特性提出一种设计宽波段高分辨罗兰光栅的方法,通过选择适当的使用结构和校正波长,能够在整个使用波段有效地校正像散和弧矢彗差。利用这种优化方法设计了工作波段为160~600 nm的罗兰光栅。光线追迹结果显示,所设计光栅的光谱分辨率和能量集中度在整个使用波段较传统光栅均有显著提高。     

全息凹面光栅二阶圆场和平场成象特性

从全息凹面光栅几何成象理论出发，用简捷的解析方法研究固定入射狭缝全息凹面衍射光栅摄谱装架二阶圆场和平场成象特性。指出罗兰圆是唯一的二阶子午无离焦圆场摄谱装架和只存在的唯一的一簇二阶矢无象散平场摄谱装架。还指出仅当柱面或平面光栅时，才能形成二阶子午无离焦平场和弧矢无象散圆场谱面，进一步讨论获得既不离焦也无象散的圆场和平场装架的可能性。     

Offner凸面光栅超光谱成像仪的设计与研制

传统的平面或凹面光栅分光的光谱成像仪受像差校正的限制,数值孔径较小,能量利用率低,难以实现高的光谱和空间分辨率.用一块凸面光栅代替全反射式Offner中继系统中的凸面反射镜.构成的Offner凸面光栅超光谱成像仪具有固有像差小的优点.凸面光栅的制作采用全息记录的方法.通过优化设计全息记录参数和光栅槽形,可获得高的衍射效率.优化设计并研制得到的凸面光栅超光谱成像仪结构紧凑、像差校正能力强、数值孔径大、集光本领高,可同时获得高的光谱和空间分辨率.     

无透镜傅里叶变换数字全息术的特点分析和讨论

利用传统全息的理论 ,分析了无透镜傅里叶变换数字全息记录和再现的方法及其相应的物像关系、记录系统结构参数对再现像分辨率的影响 ,并进行相应的实验验证。理论分析和实验结果都表明 :无透镜傅里叶变换全息术 ,不仅降低了数字全息对记录采样的要求 ,而且使再现像分辨率得到较大的提高。同时 ,在保证再现像分离的前提下 ,通过增大记录系统的数值孔径 (缩短记录物体到CCD和参考点源的距离 ) ,可以实现数字全息再现像分辨率的提高     

一种体相位全息透射式光栅的光谱仪分光系统

针对平面和凹面反射式光栅型光谱仪分光光路(SLP),存在像差大、谱面平直度差和衍射效率不高等不足,设计了一套基于体相位全息透射式(VPHT)光栅的分光光路。在理论探讨的基础上通过数值仿真模拟了VPHT光栅的衍射效率情况;为了充分验证所设计光路的可行性,实验中通过光谱定标验证了光路的光谱分辨率优于2 nm,通过最小二乘线性拟合算法得到定标波长与对应探测像元的校准关系式,对635 nm波长采用多次测量取平均值,测试结果表明波长绝对误差为0.37 nm,整个定标波长点的均方根误差(RMSE)为0.3 nm;另外,使用了多项式拟合算法建立了200~800 nm光谱范围内的波长偏移量与对应衍射波长的关系式,能较好地解决分光光路中波长校正的问题。     

全息片质量对原子全息光刻图形影响的模拟研究

全息片质量是影响原子全息光刻再现图形质量的关键因素，然而其制作工艺复杂，工序繁多，质量难以控制，模拟研究有助于把握全息片制作工艺中的关键环节，提高全息片的质量。详细模拟了全息片的三个主要质量指标：刻透率、分辨力以及薄膜厚度对再现像质的影响，结果表明：刻透率控制在90％左右即可满足要求，分辨率应优于0．1μm，膜层应尽量均匀。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.