基于SOR-PCG的低复杂度信号检测算法研究

针对最小均方误差信号检测算法复杂度随着天线数量增加呈指数增长的问题,提出低复杂度的预处理共轭梯度信号检测算法.该算法通过灵活调整松弛因子,运用预处理技术降低矩阵条件数,从而加快共轭梯度信号检测算法的收敛速度.仿真结果显示,该算法在小数量的迭代中能够达到和最小均方误差检测算法相似的误码率,算法复杂度下降了一个数量级.通过选择适当的松弛因子,相比直接用共轭梯度法,能够更快收敛到最佳值.     

用于大规模MIMO系统的改进CG检测算法

针对大规模多输入多输出(Multiple-Input Multiple-Output,MIMO)系统中近似最优线性最小均方误差(Minimum Mean Square Error,MMSE)算法复杂度过高问题,提出了RC-CG(Region Constellation-Conjugate Gradient)低复杂度近似最优信号检测算法。该算法首先利用共轭梯度(Conjugate Gradient,CG)迭代算法避免MMSE信号检测算法的高维度矩阵求逆,降低计算复杂度;其次引入二分查找算法对星座图进行区域分块,优化迭代初始解,使算法在保证原来检测性能的基础上加快收敛速度。仿真结果表明,该算法不仅可以达到近似MMSE算法的检测性能,而且适用于高阶调制,算法复杂度从O(K3)降低到O(K2)。     

大规模MIMO系统中块高斯-赛德尔检测算法

最小均方误差(Minimum Mean Square Error,MMSE)检测算法,虽然能在大规模多输入多输出系统中获得接近最优的线性检测性能,但是涉及高维矩阵求逆运算,难以在实际应用中快速有效地实现.提出了块高斯-赛德尔(Block Gauss-Seidel,BGS)低复杂度信号检测算法,将MMSE检测器的滤波矩阵先进行分块预处理,构造分裂矩阵,再通过迭代求解发送信号向量估计值,以提高算法检测性能.仿真结果表明,BGS迭代算法在调制方式为64QAM、用户侧的天线数量设置为16、基站侧的天线数量设置为256时,迭代2次后就能快速接近MMSE检测性能.在设置近似初始值后,BGS算法的性能得到了进一步的改善.当调制方式为256QAM时,设置近似初始值的BGS算法在迭代2次后就能逼近MMSE算法的误码率(Bit Error Ratio,BER)性能曲线,此时算法的复杂度仍然保持在O(K2).     

MIMO中基于预处理的广义加权Gauss-Seide算法

最小均方误差(MMSE)检测器在大规模多输入多输出(MIMO)系统中实现了较优的误码率(BER)性能,但其涉及高复杂度的大规模矩阵求逆运算,因此对硬件要求很高.针对这一问题,文章提出了一种预处理的广义加权高斯赛德尔(GS)(GW-PGS)迭代算法.在该算法中,首先提出了基于预处理的初始化方案,在不增加额外复杂度的情况下...     

基于切比雪夫-迹迭代的大规模MIMO系统软输出信号检测

在多用户大规模多输入多输出(MIMO)系统信号检测算法中,最小均方误差(MMSE)算法可取得近似最优性能,但MMSE算法中高维矩阵求逆的复杂度过高,导致在实际应用中难以快速有效地实现.同时,对于高阶正交幅度调制(HQAM),如果符号向比特的解映射采用硬判决,将会导致后续信道译码的性能明显下降.因此,该文针对采用格雷编码的HQAM的多用户大规模MIMO系统,提出一种基于切比雪夫-迹迭代(CTI)的低复杂度软输出信号检测算法.该算法不但有效地规避了信号检测所需的高维矩阵求逆,同时,利用格雷编码的调制信号的比特翻转特性和二叉树结构,给出了一种融合三叉链表搜索的比特对数似然比(LLR)简化计算方法.仿真结果表明,该文所提的软输出信号检测算法最多需要3次迭代就能收敛并可取得接近MMSE算法的性能,在复杂度和性能之间取得了很好的折中.     

大规模MIMO系统混合线性迭代信号检测算法

针对大规模多输入多输出(MIMO)系统中线性最小均方误差(MMSE)信号检测算法复杂的高维矩阵求逆难以用于实际工程的问题,文章基于矩阵分块思想并结合Neumann级数展开算法,提出了一种低复杂度的混合迭代算法.利用MMSE算法中加权矩阵逆矩阵的Neumann级数二阶展开作为其分块矩阵求逆的迭代初始值,可以有效提高算法收...     

基于Kaczmarz迭代的大规模MIMO系统低复杂度软输出信号检测

大规模MIMO系统上行链路中,最小均方误差（MMSE）算法能获得接近最优的线性检测性能,但是涉及复杂度较高的矩阵求逆运算.本文基于Kaczmarz迭代提出一种低复杂度软输出信号检测算法,在算法实现中避免了矩阵求逆运算,将实现复杂度由O（K³）降为O（K²）.同时,引入了最优松弛参数进一步加快算法收敛,最后给出了两种用于信道译码的LLR的近似计算方法.仿真结果表明：所提出的Kaczmarz迭代软输出信号检测算法经过两到三次简单的迭代即可较快地收敛,并达到接近MMSE检测算法的误码率性能的水平,其性能与复杂度均优于基于矩阵近似求逆的一类检测算法.     

基于切比雪夫-迹迭代的大规模MIMO系统软输出信号检测

在多用户大规模多输入多输出(MIMO)系统信号检测算法中,最小均方误差(MMSE)算法可取得近似最优性能,但MMSE算法中高维矩阵求逆的复杂度过高,导致在实际应用中难以快速有效地实现。同时,对于高阶正交幅度调制(HQAM),如果符号向比特的解映射采用硬判决,将会导致后续信道译码的性能明显下降。因此,该文针对采用格雷编码的HQAM的多用户大规模MIMO系统,提出一种基于切比雪夫-迹迭代(CTI)的低复杂度软输出信号检测算法。该算法不但有效地规避了信号检测所需的高维矩阵求逆,同时,利用格雷编码的调制信号的比特翻转特性和二叉树结构,给出了一种融合三叉链表搜索的比特对数似然比(LLR)简化计算方法。仿真结果表明,该文所提的软输出信号检测算法最多需要3次迭代就能收敛并可取得接近MMSE算法的性能,在复杂度和性能之间取得了很好的折中。     

基于传输信号源非圆特性的MIMO检测算法研究

针对传输非圆信号的多输入/输出(MIMO)通信系统提出了几种新检测算法,可估计来自接收信号及其复共轭的传输信号,并针对性能改进给出了相关分析结果。所提算法的计算复杂度在阶数方面与传统迫零(ZF)相同。仿真结果表明,扩展迫零(EZF)及扩展最小均方误差(EMMSE)检测器均优于最小均方误差(MMSE)检测器,且EZF或EMMSE的排序串行干扰消除(OSIC)法在误码率(BER)方面具有准最优性能。     

大规模MIMO系统低复杂度混合迭代信号检测

在大规模MIMO系统上行链路信号检测算法中,最小均方误差(MMSE)算法能获得接近最优的线性检测性能.但是,传统的MMSE检测算法涉及高维矩阵求逆运算,由于复杂度过高而使其在实际应用中难以快速有效地实现.基于最速下降(steepest descent,SD)算法和高斯一赛德尔(Gauss-Seidel,GS)迭代的方法提出了一种低复杂度的混合迭代算法,利用SD算法为复杂度相对较低的GS迭代算法提供有效的搜索方向,以加快算法收敛的速度.同时,给出了一种用于信道译码的比特似然比(LLR)近似计算方法.仿真结果表明,通过几次迭代,给出的算法能够快速收敛并接近MMSE检测性能,并将算法复杂度降低一个数量级,保持在O(K2).     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.