Xilinx对FPGA的技术市场展望

引子2011年12月13日,可编程平台厂商赛灵思公司(Xilinx)进驻北京新址,并开设研发中心。会上,Xilinx介绍了FPGA的发展方向。FPGA的目标是软件可编程"过去十年,尽管全球定制化市场规模减少一半,而FPGA的增长率     

全球领先PLD与ASIC供应商强强合作 XILINX和IBM达成集成电路制造合作协议

美国Xilinx公司和IBM公司微电子部近日宣布一项长期合作协议,双方将结合各自先进的技术,合作制造应用于通信、存储和消费市场的下一代集成电路。美国Xilinx公司是全球PLD(可编程逻辑器件)领先厂商,Xilinx公司在全球首家推出FPGA(现场可编程门阵列)技术,目前占据全球高端FPGA产品90％     

Xilinx扩展FPGA版图

9月16日,Xilinx公司在海南三亚举办的Xilinx亚太区Virtex-4媒体技术峰会上,Xilinx全球市场副总裁Sandeep Vij宣布了公司四大新闻:一,Xilinx推出了以最低成本可提供突破性性能的Virtex-4 FPGA产品;二,Xilinx推出ISE6.3i设计套件,可推动Virtex-4 FPGA扩大性能领先优势高达40%;三,Xilinx宣布成立新的DSP部门;四,Xilinx同时宣布成立新的嵌入式处理部门.     

顺应趋势预先布局Xilinx成立DSP与嵌入式处理部门

有鉴于DSP、嵌入式技术在FPGA未来发展中的角色日益重要,赛灵思公司(Xilinx)日前宣布成立两个新部门:DSP部与嵌入式处理部.Xilinx公司全球市场副总裁Sandeep Vij强调,成立新部门对Xilinx日后拓展FPGA应用至关重要,但Xilinx并不会销售独立的DSP与嵌入式处理器,而是提供客户集成式平台,因此对Xilinx与TI等公司的合作并无直接冲突.     

Xilinx：从产品向功能化平台转变

日前，上任半年多的Xilinx（赛灵思公司）全球总裁兼CEO Moshe Gavrielov第二次来到中国，并首次接受本地媒体的采访，随行的还有新任Xilinx亚太区销售部副总裁杨飞和新任Xilinx亚太区大中华区市场营销及应用工程部总监张字清。     

业界动态

Xilinx推出中文网站,支持中国市场 赛灵思公司(Xilinx)日前正式推出新的中文网站,以支持公司在中国市场的迅速成长。中文网站将Xilinx的英文全球网站中的公司信息译成简体中文,并提供有关公司、技术支持、教育信息     

FPGA：成为完美风暴的支点

根据最近公布的有关数据统计,目前全球FPGA市场份额中,Xilinx占据53%,在全球90nm FPGA市场份额中,我们占据了62%,而在带有收发器的FPGA产品中,我们的全球份额是86%!Xilinx全球副总裁兼首席技术官Ivo Bolsens日前在接受EDNChina专访时,首先强调了这些数字,他还     

研讨会

Xilinx可程式逻辑技术全球巡回研讨会台北、新竹分别举行全球可编逻辑方案领导厂商—Xilinx公司日前宣布将展开全球巡回技术研讨会,研讨会中将针对快速变化的可编程逻辑工业之最新趋势提出最详实的报告与说明。此次研讨会也将来台举行,为提供参加者不同时间、地点的选     

Xilinx不断推出新品来赢得市场

早春二月,春寒未退、Xilinx公司亚太地区中国销售经理陆绍强到北京,向业界介绍了Xilinx的最新动态以及刚推出的新一代产品。本刊记者采访了陆绍强经理。陆绍强说,Xilinx是全球领先的可编程逻辑公司,设计、开发和推广多种先进集成电路、软件设计工具及系统芯核。     

市场指南

FPGA(现场可编程门阵列)是倍受数字系统设计师青睐的系统积木块。讲到FPGA,数字系统设计师们就会想到Xilinx。Xilinx公司成立于1984年,总部在美国著名的硅谷。公司成立当年便发明了FPGA,并于翌年推出第一个商业性产品。目前,在全球FPGA销售额中,Xilinx公司超过一半。1992年,Xilinx又推出CPLD(复杂可编程逻辑器件)。它还提供各种     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.