用于APSK和QAM信号信噪比估计的改进分段数据拟合算法

为提高幅相键控( APSK)信号和正交调幅( QAM)信号信噪比估计范围和精度,提出了一种改进的信号信噪比估计算法。算法首先计算接收信号平方的均值和绝对值的均值之比,然后根据星座图特征,利用多项式拟合该比值与信噪比的关系。在拟合过程中,对信噪比区间进行分段拟合来提高各段拟合精度,并用蒙特卡洛仿真经验值修正算法的固有偏差,从而得到信噪比的近似无偏估计。仿真结果表明,当信噪比估计区间为-5~20 dB且数据长度合适时,16 APSK和32 APSK信号信噪比估计偏差均值小于0.5 dB,标准差小于2 dB;该算法对16QAM和32QAM信号信噪比估计的标准差小于传统数据拟合算法。该算法运算复杂度较低,便于实时应用和硬件实现,对恒模和非恒模信号均能实现信噪比宽范围精确盲估计。     

一种QAM信号的盲信噪比估计算法

本文首先推导了QAM信号信噪比估计的克拉米罗下限,然后以两个统计量比值与信噪比关系的研究为基础,提出了一种QAM信号的盲信噪比估计算法.虽然高阶QAM信号的信噪比估计需要较多的观察数据才能得到准确的信噪比估计值,但是本算法不需要额外的存储器来存储这些数据;并且该算法具有非常低的运算复杂度.文章还以多种QAM信号为例进行了具体的分析和计算机仿真,分析和仿真的结果表明在合适的观察数据长度下,该算法对文中测试的各种QAM信号都能进行有效估计.     

基于相位匹配原理的稳健方位估计

文中介绍了一种新的信号方位估计原理--相位匹配原理(PMT),该原理计算简单、且不受噪声相关特性的影响。论文提出了一个新的基于矩阵范数的判别准则,该准则极大地改进了方位的估计精度和方差,并保持了算法计算简单的特点。仿真结果表明改进后的准则在高信噪比下接近MUSIC的估计性能,在低信噪比下却超过MUSIC估计,而且其估计性能不受未知相关噪声的影响。     

基于轻量化RF算法的高阶QAM信号OSNR估计方法

针对光信噪比(OSNR)估计复杂度高、计算量大的问题,提出了一种基于轻量化随机森林(RF)算法的高阶正交幅度调制(QAM)信号OSNR估计方法。该方法通过将不同OSNR的高阶QAM信号映射为不同的星座图数据集,并利用这些数据集来训练RF模型,从而实现OSNR的快速估计。仿真结果表明：采用基于轻量化RF算法估计64QAM和128QAM信号的OSNR,在系统OSNR真实值为5～30 d B时,2种调制格式的OSNR估计准确率均接近100%;64QAM信号OSNR估计值的平均绝对误差(MAE)为0.08 d B,128QAM的MAE为0.12 d B,比基于长短期记忆(LSTM)算法的信号OSNR估计结果更准确。     

非数据辅助的QAM信号载波频偏估计算法

研究了正交幅度调制（Quadrature Amplitude Modulated ,QAM）信号的非数据辅助载波频率偏移估计算法。针对一些算法主要适用于低阶QAM信号以及计算复杂度较高等问题,提出一种基于加权相位直方图的载波频偏估计算法。该算法通过分析零频偏下的相位概率密度函数与加权相位直方图的关系,采用多级估计方法,对该相位直方图二阶矩的峰值进行测量,从而得到频偏估计值。进一步地,本算法通过联合快速傅里叶变换（Fast Fourier Transform,FFT）算法实现多级估计过程,从而简化计算过程降低计算复杂度。仿真结果表明,信噪比较高时,该算法在无信噪比、星座图以及前导信息等辅助信息条件下同样具有较好的估计性能。      

改进的16QAM载波频偏估计算法

针对QAM相干光传输系统中载波频偏估计算法存在估计范围小、计算复杂度高的问题,提出一种基于训练符号的FFT频偏估计算法.利用训练符号相位信息消除部分采样信号调制相位,取该部分信号的幅角进行FFT变换,最终得到频偏估计值.消除了原频偏估计算法中除以4的运算,从而扩大了频偏估计范围,同时由于减少了FFT长度进而降低计算复杂度.仿真结果表明,改进后的算法在QAM相干检测系统保持较高精度的频偏估计情况下,其估计范围可以达到±50％符号速率.     

OFDM系统中一种改进的信噪比估计算法

在OFDM系统,SNR承担着监控信号质量的责任.主要研究了基于LMMSE信道估计的信噪比估计.针对现有算法的复杂度高,信噪比估计有偏的问题,提出了一种改进的修正算法.该方法通过无偏的噪声估计以及前后OFDM符号之间的迭代来实现快速收敛,并且直接利用LMMSE信道估计过程的系数来计算修正因子,计算复杂度低.经仿真表明,所提方法在高SNR时估计精度可提高2dB,误码率也有0.3dB的提升.     

基于相关向量机的信噪比估计算法

为了使已有PSK信号信噪比估计算法在平坦衰落信道下,能够同时满足估计范围大、估计精度高的要求,提出了一种基于相关向量机（RVM, relevance vector machine）的信噪比估计新算法。该方法在建立起信噪比与二阶、四阶矩之间关系的基础上,应用相关向量机建立估计模型,并通过训练学习,得到可靠的模型权值。实验表明,利用测试数据对信号信噪比进行估计时,相对于其他算法,该算法具有使用数据量少,估计范围广,在有效的估计范围内,估计精度较高,且适用于多种调制信号的特点。     

UWB定位中的自适应时间延迟估计算法

研究了时延估计算法在超宽带(Ultra Wide Band)定位中的应用,其广义相关自适应时间延迟估计算法的收敛速度慢,在低信噪比条件下时间延迟估计精度较低。针对低信噪比条件下的收敛特性,提出一种最大似然加权的广义相关自适应时间延迟估计算法,并进一步提出了改进的基于最大似然(Maximum Likelihood)加权函数的广义互相关时延估计算法。改进的算法采用加窗法和自适应时变干扰删除滤波法,弥补了原算法计算量大及无法消除时变信号干扰的不足。仿真结果表明,改进的算法计算复杂度明显降低,能够有效地消除其他信号干扰,具有较高的时延估计精度和鲁棒性。     

UWB定位中的自适应时问延迟估计算法

研究了时延估计算法在超宽带（Ultra Wide Band）定位中的应用,其广义相关自适应时间延迟估计算法的收敛速度慢,在低信噪比条件下时间延迟估计精度较低。针对低信噪比条件下的收敛特性,提出一种最大似然加权的广义相关自适应时间延迟估计算法,并进一步提出了改进的基于最大似然（Maximum Likelihood）加权函数的广义互相关时延估计算法。改进的算法采用加窗法和自适应时变干扰删除滤波法,弥补了原算法计算量大及无法消除时变信号干扰的不足。仿真结果表明,改进的算法计算复杂度明显降低,能够有效地消除其他信号干扰,具有较高的时延估计精度和鲁棒性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.