N—ISDN PRA及其在S—12J的实现

Ｎ ＩＳＤＮ给用户提供两种速率接口 :基本速率接口（ＢＲＡ）和基群码率接入（ＰＲＡ）。ＢＲＡ由２个Ｂ通道（６４ｋｂ／ｓ）和１个Ｄ通道（１６ｋｂ／ｓ）组成 ;ＰＲＡ由３０个Ｂ通道（６４ｋｂ／ｓ）和１个Ｄ通道（６４ｋｂ／ｓ）组成。本文将介绍ＰＲＡ及其在Ｓ-１２Ｊ上的实现。１ＰＲＡ简介通常ＰＲＡ通过ＮＴ２ ＩＳＤＮＰＡＢＸ（ＩＳＰＢＸ）给用户提供服务 ,ＩＳＰＢＸ也是一个ＰＡＢＸ ,大部分ＩＳＰＢＸ的数据存放在ＰＡＲＭ（ＳＡＣＥＰＡＢＸ）中 ,能够通过２Ｍｂ／ｓ的ＰＲＡ接口实现点到点的连接。２Ｍｂ／ｓＰＣＭ由３０…     

CATV与综合业务数字通信

ＣＡＴＶ有能力提供电话和数据服务，有线电视分配与电视ＩＳＤＮ接入集合到户是实现宽带综合网络的便利途径，本文考虑了ＣＡＴＶ／ＩＳＤＮ结合的方法，ＩＳＤＮ主速率时分多址接入方式以及用户接口的规格。     

ISDN与接入网

本文从国际与国内通信网发展的情况，论述了我国发展ＩＳＤＮ策略及步骤，进而对实现ＩＳＤＮ的基本速率接入－（２Ｂ＋Ｄ）Ｕ接口及基群速率接入－３０（Ｂ＋Ｄ）Ｕ接口的实现过程作了说明。     

通信技术标准简介

一、标准名称： ８００ＭＨｚ ＣＤＭＡ数字蜂窝移动通信网移动应用部分技术要求 二、标准编号：ＹＤ／Ｔ １０３１—１９９９ 三、发布部门：中华人民共和国信息产业部 四、发布日期：１９９９１２．２７ 四、实施日期：１９９９、１２．２７． 五、起草单位：信息产业部电信传输研究所 六、代替原标准代号及名称：ＹＤＮ０９３—１９９８《８００ＭＨｚＣＤＭＡ数字蜂窝移动通信网移动应用部分（ＭＡＰ）技术要求》 七、对修改内容的说明 本标准是在原ＹＤＮ０９３—１９９８和美国ＡＮＳＩＴＩＡ／ＥＩＡ—４１Ｄ标准和 ＴＩＡ／ＥＩＡ ＩＳ—８０７（ＰＮ－４１９７）标准的基础上,根据我国的实际情况进行了部分修改而制定的。修改的内容主要包括： 删除了有关ＤＡＭＰＳ和ＮＡＭＰＳ的内容 ＤＡＭＰＳ和ＮＡＬＭＰＳ的内容主要包括以下参数： ＮＡ－ＭＰＳ Ｃａｌｌ Ｍｏｄｅ ＮＡＭＰＳ　Ｃｈａｎｎｅｌ Ｄａｔａ ＴＤＭＡ Ｂｕｒｓｔ Ｉｎｄｉｃａｔｏｒ ＴＤＭＡ Ｃａｌｌ Ｍｏｄｅ ＴＤＭＡ Ｃｈａｎｎｅｌ Ｄａｔａ Ｖｏｉｃｅ Ｐｒｉｖａｃｙ Ｍａｓｋ（ＴＤＭＡ信道加密,ＣＤＭ４Ａ用专用长码,原文有误） 考虑到将来可能与长城网或西北五省的ＡＭＰＳ双...     

AN—2000：一种新型的带V5接口的综合接入系统

介绍ＡＮ－２０００是一个比较完善的综合接入系统，现已能提供ＰＯＴＳ，ＤＤＮ、２／４Ｗ Ｅ＆Ｍ，ＩＳＤＮ接口（２Ｂ＋Ｄ，３０８＋Ｄ），子速率复用等综合业务接入，同时新的业务接入模块也正在不断推出；并且将ＡＮ－２０００与交换机远端模块的几个方面进行了比较。最后简介ＡＮ－２０００与Ｆ－１５０、Ｓ－１２４０的对接实验。     

N-ISDN的新接入技术AO/DI

随着互联网的快速发展,在ＷＡＮ范围内,人们越来越多地利用Ｎ—ＩＳＤＮ远程接入,但早期Ｎ—ＩＳＤＮ协议设计时并没有预料到将它用于互联网接入,这种接入互联网的方式和用Ｍｏｄｅｍ的方式都采用电路交换网的拨号连接,其弊端是浪费带宽。 用户上同时必须首先建立一个电路连接,而用户在浏览、等待网页、收发ｅ－ｍａｉｌ时,独占的Ｂ信道并没有充分利用,这对ＩＳＰ、用户以及电话公司来说都是一种浪费。为了提高网络的使用效率,一种新技术ＡＯ／ＤＩ应运而生。 ＡＯ／ＤＩ （Ａｌｗａｙｓ Ｏｎ ／ＤｙｎａｍｉｃＩＳＤＮ）是 ＶＩＡ…     

PC-ISDN接口

介绍了ＰＣ－ＩＳＤＮ一次群速率接口的设计方案。阐述了ＩＳＤＮ用户－网络接口协议和接口卡硬件,用８０Ｃ１８８控制ＩＳＤＮ通信电路,通过双端口ＲＡＭ,经ＩＳＡ总线与ＰＣ机进行通信;给出了软件结构。     

浅谈ISDN与Internet的互联

由于ＩＳＤＮ可以提供Ｎ×６４ｋｂｉｔ／ｓ的通信速率，使Ｉｎｔｅｒｎｅｔ访问速度大大加快，广州市电信局准备利用商业网（基于大唐ＳＰ３０ＩＳＤＮ交换机）发展Ｉｎｔｅｒｎｅｔ业务，并采用ＣＩＳＣＯ公司的多协议路由器，ＩＳＤＮ与Ｉｎｔｅｒｎｅｔ两网互联后，丰富了接入方式，用户可通过路由器，Ｍｏｄｅｍ，ＩＳＤＮ适配器等方式通过ＩＳＤＮ网进入Ｉｎｔｅｒｎｅｔ。     

第三代移动通信系统IMT-2000的研究进展(续)

２．２．３码片速率ＤＳ的码片速率统一为３．８４Ｍｃ／ｓ,ＭＣ的码片速率统一为３．６８６４Ｍｃ／ｓ,采用时分双工（ＴＤＤ）模式ＣＤＭＡ方案的码片速率采用３．８４Ｍｃ／ｓ。２．２．４射频参数模式间射频（ＲＦ）参数的融合将最大程度上鼓励使用能显著降低总体成本的经济性升级方法。２．３协议层融合建议２．３．１融合需求融合需求有以下几点：１）三种３ＧＣＤＭＡ模式的无线接入网必须完全支持ＡＮＳＩ４１和ＧＳＭＭＡＰ所定义的业务功能。２）能支持基于同步技术的操作,如用户定位等。３）能支持ＤＳ和ＭＣ模式间的无缝切换…     

ISDN与LAN远程互连

本文主要介绍了ＩＳＤＮ与ＬＡＮ远程互连的模式和互连设备，分析了ＩＳＤＮＭＡＣ网桥和ＩＳＤＮＩＰ网关的体系结构，并提出一种简单易行的ＩＳＤＮＭＡＣ网桥的方案。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.