接入网中V5.2接口ASIC芯片设计

V5接口提供了接入网与本地交换机间的新型开放式数字接口。重点讨论了符合V5．2接口协议的ASIC芯片的实现方案。根据该方案使用硬件描述语言（Verlog HDL)和采用自顶向下（TOP－DOWN）的设计方法实现了具体电路,并使用FPGA芯片对该电路进行了物理验证。实验表明根本本方案设计的电路正确,工作稳定可靠。     

一种用于TCOCXO的数据修调电路

采用VIS 0.15 pm BCD工艺设计了一款应用于温度补偿恒温晶体振荡器(TCOCXO)专用集成电路(ASIC)的数据修调电路.该数据修调电路由逻辑控制电路和一种电可擦可编程只读存储器(EEPROM)构成,主要功能是完成TCOCXO ASIC中温度补偿的控制及实现芯片的多模式工作.与通过模拟函数发生器实现的补偿方式相比,使用该数据修调电路实现的温度补偿方法可以实现更高的补偿精度和更小的芯片面积.通过该电路对TCOCXO ASIC进行调试与配置,搭载该ASIC的晶体振荡器在温度为-40～85℃时频率-温度稳定度可达±5×10-9.TCOCXO ASIC的测试结果表明,这种修调方法在减小芯片面积的同时可以实现更高精度的频率-温度补偿.     

一种百万像素CCD图像采样接口电路的设计与实现

设计了一种用于高级数码相机的CCD图像采样接口电路。简单介绍了图像采样接口电路的设计要求，重点描述了图像采样接口电路中各个模块的设计。整个电路作为数码相机专用集成电路芯片的一部分，通过了FPGA验证，并用TSMC 0．25μm SAGE^TM工艺进行了ASIC实现。     

FPGA多标准可配置Ⅰ/O接口电路设计

随着FPGA使用的工艺尺寸逐渐减小和芯片设计技术的逐步完善,FPGA与ASIC之间性能差异也逐渐减小.正因为如此,越来越多的研究开始集中于FPGA中CLB的内部结构与FPGA的布线算法优化.但是,针对FPGA多标准兼容可配置I/O的研究却极少.文章提出了一种能够同时满足多标准接口应用与可动态配置要求的I/O接口电路结构,并已将其应用在某款采用华虹NEC 0.22,μm工艺的FPGA芯片中.仿真证明,该结构满足设计要求,接口电路性能优于Xilinx的类似结构.     

FPGA多标准可配置I／O接口电路设计

随着FPGA使用的工艺尺寸逐渐减小和芯片设计技术的逐步完善,FPGA与ASIC之间的性能差异也逐渐减小。正因为如此,越来越多的研究开始集中于FPGA中CLB的内部结构与FPGA的布线算法优化。但是,针对FPGA多标准兼容可配置I／O的研究却极少。文章提出了一种能够同时满足多标准接口应用与可动态配置要求的I／O接口电路结构,并已将其应用在某款采用华虹NEC0．22μm工艺的FPGA芯片中。仿真证明,该结构满足设计要求,接口电路性能优于Xilinx的类似结构。     

160 Gbit/s交叉连接芯片总体方案设计

首先在明确40Gbit／sSDH(STM-256)光纤通信设备要求的基础上,确定了芯片与外围电路的电路、功能和时序接口,制订了满足设备需要并利于ASIC实现的芯片技术规范;其次,进行了芯片的总体方案设计,按照自顶向下的全正向设计方法进行了芯片的逻辑结构设计,并合理安排了芯片的寄存器结构;行为级仿真结果表明,方案是可行的．     

基于IP核的加油机编码器芯片设计

描述了一种基于微处理器IP核的加油机编码器芯片的设计.从扩展微处理器的在线调试功能、Flash接口设计、标准外设接口和中断管理等几个方面,详细讲述了该芯片的设计要点;芯片设计完成后,经过FPGA验证和ASIC实现.该芯片具有功能齐全、便于移植、可灵活配置等优点.     

一种高清数字电视H.264编码系统的设计

给出一种基于ASIC方案的H.264高清实时编码系统的设计方法。系统包括主控MCU、专用高清编码芯片、HDMI视音频数据接口、模拟视音频输入接口和ASI输出接口等电路。系统还提供了以太网接口,用于对编码系统进行实时监控,以获取编码系统的工作状态并对编码参数进行配置。方案实时性好,符合高清数字电视前端系统的需要。     

一种用于ASIC芯片测试的多接口CPU模型的VHDL设计

为了对具有不同CPU接口的VHDL语言实现的ASIC芯片进行仿真测试,降低芯片测试的复杂性及成本,本文设计了一个专门用于芯片测试的CPU模型。模型用VHDL语言实现,设计采用了分层次、模块化的设计思想。与现有的VHDL实现的CPU模型相比较,该模型具有结构简单、多接口、高效率、调试使用方便等特点,本文对此CPU模型的设计思想,结构作了介绍和分析。     

16位稳态电流LED驱动器的ASIC设计

提出了一种大电流16位稳态电流LED驱动器的ASIC设计方案,并描述了芯片的主要功能原理。对各个模块的主要电路进行了分析和设计,数字部分电路依靠成熟的FPGA平台验证,最大程度提高了电路可靠性;模拟部分电路通过分析和计算,确定不同参数,最后对整个方案进行了仿真。这种16位稳态电流LED驱动芯片可以完成对点阵LED显示屏的驱动,芯片外围电路简单、成本低、可靠性高。该芯片也适用于点阵LED屏等LED设备的驱动,应用十分广泛。芯片方案的各个部分都给出了详细的仿真结果,整个方案最后通过了T-Spice后仿真。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.