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1.
为了提高宽色域液晶显示器的光效率,本文提出了一种反射式彩色滤光片。首先计算了反射式彩色滤光片的光效率增强效果,然后设计了基于低中高折射率介质的多层堆叠结构([ABCCBA]8)的彩色滤光片,在使用带有黄色荧光粉的白光二极管(YAG-LED)和量子点(QD)背光单元时,光效率分别从17.4%提升到32.9%,从18.5%提高到58.9%,同时该结构的色域提高到了120.7%NTSC和131.2%NTSC。考虑背光模组中散射膜的作用,计算了入射光角度在20°以内时,带有YAG-LED和QD背光的LCD光效率依然分别大于32%和56%,色域基本不变。这些结果在宽色域液晶显示器中具有重要的潜在应用前景。  相似文献   

2.
彩色滤光膜色度测试系统的研究   总被引:3,自引:3,他引:0  
张航  于涛  张睿鹏 《液晶与显示》2005,20(4):337-341
彩色滤光膜(CF)色度指标对彩色液晶显示器的显示性能有着重要的影响,采用传统的分光光度计测量CF光谱透过率存在着严重的混光现象,研究分析了CF色度参数的表征与测试原理,设计了高精度的显微光谱测试系统。系统能够精密测试50μm尺寸样品的光谱特性,并且得到±0.005的色度座标测试精度。系统已应用在彩色滤光膜与彩色液晶显示器生产企业,取得了良好的效果。  相似文献   

3.
透明液晶显示器色度特性研究   总被引:2,自引:0,他引:2  
透明显示器适用于建筑物窗户、汽车车窗与商店橱窗等多种应用,除了原有的透明显示功能以外,还具有未来可能作为信息显示器的发展潜力,因而备受市场关注.但是目前厂商开发的重点仅集中在如何提高透明液晶面板的全光透过率,而对其色度特性研究却很少,导致在实际应用上全光透光率高的产品,其背后物品的色彩显示并不准确,应用效果不理想.在本文中,我们采用本公司量产的315UV2A透明液晶面板,对不同颜色光线通过透明显示器时的色度坐标偏移情况进行研究,确定了透明显示器对色度的影响.  相似文献   

4.
为了提升液晶显示器的透过率,优化产品白平衡提升色温,本研究在液晶显示器行业内首次使用了全染料系的蓝色光阻材料,并搭配实际产品,对该材料进行了一系列应用性评价。首先,对材料进行原理性分析,初步评估全染料系材料的透过率和光学稳定性、热稳定性;接着,使用该材料光谱进行初步的色度评估,并搭载产品进行测试。测试结果表明:此款全染料系蓝色光阻材料相较于传统颜料、染料混合系蓝色光阻材料,透过率可提升约9%;产品组装背光源后,产品透过率可提升约3%,并且可将某一款特定TV产品的色温提升至10 700K(客户规格10 000K±1 000K),对产品显示性能有较大提升。结合G8.5世代线工艺性测试和产品信赖性评价,可以得出结论:全染料系蓝色光阻材料具有更优异的性能,满足量产标准,可在G8.5世代线应用和量产。  相似文献   

5.
李桂苓  李彦  潘榕  徐岩 《电视技术》2012,36(24):86-90
为研究多元色液晶显示器的色重显特性,采用特定色块测量的方法,以实测色度参数构建多元色液晶显示器的重显色域,分别在二维、三维色空间分析其色域特性,并与其他重要标准色域做了比较。结果表明,多元色液晶显示器的三维色域范围大于宽目标色域Pointer色域,特别是在高明度区更加明显。色度测量结果还显示,额外增加的黄元色的色饱和度并不高,也未使色域覆盖率得到显著提高,但高亮度黄元色使多元色液晶显示器的光效率得到很大提高。  相似文献   

6.
为了实现高透过率液晶显示拼接墙,提高对外界光源的透过率,同时减少拼接缝隙,进行了透明液晶显示模组的设计和开发。为增加透过率,首先,在像素设计方面,优化走线设计提高开口率;其次,在彩膜特性方面,采用减薄色阻方法优化透过谱,搭配高透率偏光片;最后,在像素排布方面,选择了RGBW的像素设计,其中W像素数量占总像素数量的50%,实验得到透过率为19.4%,NTSC为30%的模组。为减少显示拼接墙的拼接缝隙,单个显示模组的栅极电路驱动,采用栅集成电路(GOA)设计,实现了2.5mm窄边框。由于透过率和窄边框的要求,模组需要实现RGBW和GOA的显示驱动,在FPGA上编写控制程序,进行驱动时序控制和算法处理,最终制作了16×2排布的高透过率液晶显示拼接墙。  相似文献   

7.
彩色液晶显示器件色差补偿优化   总被引:1,自引:0,他引:1  
为了改善彩色液晶显示器件的色差,提升画面品质,针对(128,192,192)灰阶图形下色差的问题,对色差产生的机理进行了分析。模拟了RGB三色像素透过率对该图形下色差的影响。通过分别调整RGB彩膜膜厚,不仅相对调整了三色像素下的液晶盒层厚,而且还调整了三色像素的透过率,改善了RGB的Gamma曲线,对色差进行了补偿优化。实验结果表明,增加G像素和减小B像素的液晶盒层厚,对色差有明显补偿改善效果;同时,当RGB膜厚保持不变时,色差与液晶层厚呈正比关系,液晶层厚每减小1%时,色差约降低0.2。当RGB三色液晶盒层厚从(3.47,3.38,3.4)μm分别调整到(3.5,3.45,3.36)μm和(3.5,3.44,3.28)μm时,(128,192,192)灰阶图形下样品色差平均值从13.8分别降低到12.8和12。通过分别调整RGB彩膜膜厚,相对调整了三色像素下的液晶层盒厚和液晶量调节,可以一定程度优化补偿色差。  相似文献   

8.
为将应变液晶调光显示应用于小尺寸显示领域,特选用比重较小、机械强度较高的有机玻璃材料来制作样品。制作基于应变液晶原理。在样品制备时,采用卡通图案遮挡部分区域,进行初次强光较短时间曝光,得到有卡通图案的制品,遮光处形成透明状态,无遮光部位处于散射状态;撤掉掩膜再进行第二次弱光较长时间曝光,原透明处变弱散射半透明,原散射处充分固化变强散射部位。样品未受外力时,无遮光部分透过率低,遮光部分透过率高,形成显示;对制品施加剪切应力,整个制品变成半透明状态,遮光部分和无遮光部分透过率均较高,显示图案消隐。有机玻璃样品比玻璃样品更适合制造玩具和旅游纪念章、会展吉祥物等小商品,具有广泛的应用前景。  相似文献   

9.
固态体积式真三维立体显示器   总被引:4,自引:3,他引:1  
为了追求更加真实的立体显示效果,实现真正的三维物理空间显示,合肥工业大学研发了第二代固态体积式真三维立体显示器,文章介绍了显示器的整机结构及系统设计,并对显示效果进行了测试。介绍了显示器的各组成部分及作用,主要包括LED光源、方棒积分器、中继系统、全反射棱镜、分色棱镜、三片数字微镜器件、投影镜头、折叠光路、显示体和控制电路等。然后进行了系统设计,包括液晶光阀制作、光源设计和电路模块设计。搭建了样机并测试了整机显示效果,亮度达到123cd/m2,色彩饱和度达到78.43%NTSC色域。显示图像颜色鲜艳,亮度较高,立体感较强。  相似文献   

10.
在不加电场的情况下,被动矩阵垂直配向液晶显示器(PMVA-LCD)对于垂直入射光不产生相位延迟,故无法表征及测量其光程差.通过对PMVA-LCD透过率与电压关系的理论推导及模拟得出,在电压增大到一定值后,其透过率随电压增大而保持稳定,即此时光程差保持稳定,这一数值可用来表征PMVA-LCD的光程差.对实际样品进行测试,得到的结果与理论分析结果较为接近,之间的误差主要由白光的色散现象引起.根据此方法,可以方便地匹配液晶层的△nd值与C-plate补偿片的补偿值R,使得PMVA-LCD达到更好的显示效果.  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.  相似文献   

13.
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.  相似文献   

14.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

15.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

16.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

17.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

18.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

19.
This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.  相似文献   

20.
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.  相似文献   

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