一种基于DSP的高速光脉冲单选器的设计

设计了一种基于DSP的高性能脉冲单选器．重点介绍了系统的设计方案、工作原理、参数设计和特性曲线分析．该器件由光检测放大电路、脉冲峰值采样保持电路、反馈控制电路、强度调制器驱动电路和强度调制器以及DSP处理器等组成．该器件可以在外部调制信号的调制下,从脉冲激光器的输出脉冲序列中选出一个单脉冲．并实现输出消光比≥30dB,插入损耗≤7dB．     

小型化高压固态脉冲调制器

针对高峰值功率发射机调制器的技术要求,介绍了常用的线型调制器和固态刚管调制器电路拓扑,讨论了不同调制器的特点和适用场合。介绍了小型化高压固态脉冲调制器的电路拓扑,分析了影响调制器性能的主要因素。该调制器基于单个大功率绝缘栅双极型晶体管模块和初级采用多组导线并联绕制的脉冲变压器,并采用能量回馈电路来箝位脉冲变压器的反峰电压。文中给出了调制器的输出脉冲波形,并指出了该调制器的适用场合。     

160mW大功率固态调制器的设计与实验

为提高脉冲调制器的可靠性,设计了基于大功率绝缘栅双极性晶体管模块为开关的大功率固态调制器系统.调制器采用加法器结构,设计输出脉冲功率160 mW,脉冲电压80 kV,脉冲电流2kA.详细介绍了大功率调制器的电路拓扑和系统参数,重点阐述了大功率调制器的组件电路.介绍了绝缘栅双极性晶体管的驱动电路,给出了组件的输出波形,进...     

一种用于MPM的浮动板调制器

微波功率模块将真空电子器件和固态器件的优点有效地结合起来,其结构设计十分紧凑,需要体积小、重量轻的调制器组件为小型行波管控制栅极提供视频控制脉冲。文中分析了各种脉冲传递方式的优缺点,结合微波功率模块的电路特点,选择使用变压器进行脉冲耦合。介绍了一种新颖的浮动板调制器电路,该电路拓扑简洁,元器件较少,适用于电路的小型化。给出了该调制器电路的组成和工作原理,总结了实验结果,证明了该电路的可行性。     

设计Sigma-Delta A/D调制器结构

介绍Sigma Delta调制的基本原理。重点根据不同调制器结构的特性和产品的总体性能要求设计合适的调制器结构,实现其具体的电路总体结构,分析该电路结构特性对电路模块设计的影响,给出电路模块的设计原则和指标。芯片已在中芯国际0.18μm工艺线上流片成功,工作频率6.144 MHz,动态范围90 dB,信噪比88 dB,功耗9.4 mW,总谐波失真0.024 8%。     

一种用于D类放大器的高阶单比特的SDM调制结构的实现

在介绍∑-△调制的基本原理基础上,重点设计出一种调制器结构,其特性适用于D类功放.分析了该电路结构特性对电路模块设计的影响,给出了电路模块的设计原则和指标.该结构最终测试结果为动态范围100 dB,信噪比90 dB,翻转频率400 kHz,总谐波失真0.008 4%.最后得到结论:在48 kHz,44.1 kHz采样率下该设计功能达到了预期效果,足以满足D类放大器应用.     

2-1-1级联连续时间型ΣΔ调制器系统设计

高阶连续时间型ΣΔ调制器提供了一种有效的获得高分辨率、低功耗模数转换器的方法.提出了一种新型的2-1-1级联的连续时间型ΣΔ调制器结构.采用冲激不变法将离散时间型ΣΔ调制器变换为连续时间型ΣΔ调制器,利用Simulink对该调制器进行系统级建模和仿真,峰值信噪比达到105dB.分析了电路的非理想因素对调制器行为的影响,以获得90dB信噪比为目标确定了电路子模块指标.仿真结果表明,该结构能有效降低系统功耗,并验证了电路的可行性.     

一种高效超高消光比的FAOM级联模块

该文理论分析了影响光纤声光调制器消光比的主要因素。通过采用双器件级联和电路延时可调方案,得到了光脉冲上升时间和下降时间＜10 ns,消光比＞100 dB,脉冲利用率＞97%的高效超高消光比光纤声光调制器(FAOM)模块。采用该模块在激光测风雷达系统中实现了4 800 m的风速风向测量。结果表明,该文采用的设计方法在提高FAOM消光比的同时能够有效控制脉冲利用率,对于基于激光相干探测的测量系统性能提高有一定的促进作用。     

LiNbO3强度调制器的光脉冲整形应用

光脉冲产生系统(前端系统)需要输出初步整形的光脉冲,电光调制器可以较好地满足该需求.根据LiNbO3强度调制器特性,设计出一种整形方法,采用一级LiNbO3强度调制器进行输出光脉冲整形,可使输出直流消光比优于36dB,可生成纳秒级方波、凹型等整形光脉冲,凹型脉冲对比度优于100:1.     

一种用于带通Σ-Δ调制器的25MHz低功耗开关电容谐振器

介绍了一种运用于带通Σ-Δ调制器的谐振频率为25MHz的低功耗开关电容DD谐振器电路.电路采用了运算放大器共享技术和双采样技术,同时对单元电路进行优化,达到功耗最小化.该谐振器电路采用SMIC 0.25μm混合信号CMOS工艺进行设计,整个电路模块面积仅为0.09mm2.测试结果表明,使用该谐振器电路的带通Σ-Δ调制器工作于100MHz采样频率时,对于信号带宽为1kHz的输入信号,调制器的输出在谐振频率处SFDR约为77dB.整个谐振器功耗为10.5mW.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.