一种用于D类放大器的高阶单比特的SDM调制结构的实现

在介绍∑-△调制的基本原理基础上,重点设计出一种调制器结构,其特性适用于D类功放.分析了该电路结构特性对电路模块设计的影响,给出了电路模块的设计原则和指标.该结构最终测试结果为动态范围100 dB,信噪比90 dB,翻转频率400 kHz,总谐波失真0.008 4%.最后得到结论:在48 kHz,44.1 kHz采样率下该设计功能达到了预期效果,足以满足D类放大器应用.     

一种基于高性能光波导脉冲单选器的研制

介绍了一种高性能光波导脉冲单选器的研制.该模块由高速前放电路,数字逻辑电路,强度调制器驱动电路,自动增益控制电路,以及强度调制器组成.模块能够从锁模激光器的连续脉冲中选出一个单脉冲,并保证消光比≥46 dB,插入损耗≤7 dB.文章重点介绍了系统的设计方案、工作原理、参数设计,以及特性曲线分析,并且对测试得到的主要参数进行了总结分析.     

低电压低功耗带通Sigma Delta调制器的设计

本文设计了一种符合双标准接收机要求的一位四阶带通调制器.为了实现低电压低功耗设计的要求,改进了调制器结构,并进行了从系统到电路模块的优化.采用0.35μm CMOS工艺,Hspice和Matlab联合模拟表明:在2V电源电压下,调制器在GSM和WCDMA系统中的DR分别为86dB和36dB,而功耗仅为10.5mW和12mW.     

2-1-1级联连续时间型ΣΔ调制器系统设计

高阶连续时间型ΣΔ调制器提供了一种有效的获得高分辨率、低功耗模数转换器的方法.提出了一种新型的2-1-1级联的连续时间型ΣΔ调制器结构.采用冲激不变法将离散时间型ΣΔ调制器变换为连续时间型ΣΔ调制器,利用Simulink对该调制器进行系统级建模和仿真,峰值信噪比达到105dB.分析了电路的非理想因素对调制器行为的影响,以获得90dB信噪比为目标确定了电路子模块指标.仿真结果表明,该结构能有效降低系统功耗,并验证了电路的可行性.     

22?Bit三阶Cascaded结构Sigma?Delta 调制器设计

设计一款可用于称重传感器ADC的高精度2?1级联结构Sigma?Delta调制器。在考虑非理想因素的前提下,采用Matlab/Simulink数学建模和仿真表明,在信号带宽为20 Hz,过采样率为1024的情况下,该调制器的信噪比为170.7 dB。采用Charter 0.35μm工艺对该调制器进行电路级设计并用Spectre仿真,电路信噪比为144.8 dB,该结果高于22位要求的135 dB。     

三阶1-1-1级联Σ-Δ调制器的设计及仿真

采用MASH结构,设计了一款三阶(1-1-1)级联Σ-Δ调制器;讨论了各个模块的增益系数,设计了数字校正电路,并运用Matlab/Simulink对调制器进行了行为级仿真.当输入信号带宽为20 kHz,过采样比为64时,仿真模型得到87.7 dB的信噪比,精度为14.28位.与其他结构的调制器相比,该调制器更加稳定,动态范围更大,可应用于处理音频信号的A/D转换器.     

三阶级联Sigma-Delta调制器设计

介绍2-1级联的三阶调制器设计结构，讨论信号比例系数、积分增益系数和电路非理想特性对调制器系统的性能影响：运用SIMULINK对调制器建模并仿真，模型中考虑．开关电容积分器的非理想因素对整个调制器的影响．并通过调整信号比例和积分增益系数来确定调制器性能和电路要求。当采样率为125和时钟频率2．50MHz时．该模型结构得到93dB的信噪失真比，可应用于实际的电路系统。     

一种基于DSP的高速光脉冲单选器的设计

设计了一种基于DSP的高性能脉冲单选器．重点介绍了系统的设计方案、工作原理、参数设计和特性曲线分析．该器件由光检测放大电路、脉冲峰值采样保持电路、反馈控制电路、强度调制器驱动电路和强度调制器以及DSP处理器等组成．该器件可以在外部调制信号的调制下,从脉冲激光器的输出脉冲序列中选出一个单脉冲．并实现输出消光比≥30dB,插入损耗≤7dB．     

一种级间运放共享的MASH结构Σ-Δ调制器

基于55 nm CMOS工艺,设计了一种级间运放共享的级联噪声整形(MASH)结构Σ-Δ调制器。采用2-2 MASH结构对调制器参数进行了设计。对经典结构的开关电容积分器进行了改进,并应用到调制器电路的设计中,实现了两级调制器之间的运放共享,在达到高精度的同时减少了运放的数量,显著降低了MASH结构调制器的功耗。仿真结果表明,在3.3 V电源电压下,调制器信噪失真比为111.7 dB,无杂散动态范围为113.6 dB,整体功耗为16.84 mW。     

高精度离散型Sigma delta调制器设计

阐述一种采用SAR ADC作为多位量化器的三阶离散时间（DT）Sigma delta ADC调制器,在该调制器中,量化器由4位SAR ADC构成,相比于传统Flash ADC类型的量化器,减少了比较器的个数的同时,降低了调制器整体功耗。调制器结构选择单环CIFF结构兼顾了电路的精度和稳定性,电路总体采用分级结构实现,在第一级积分器中加入斩波稳定技术,消除低频噪声的干扰。提出的离散型Sigma delta ADC调制器采用TSMC 0.18μm CMOS工艺设计,在20kHz带宽实现了104.9dB的峰值信噪谐波失真比（SNDR）,功耗为5.98mW,有效位数(ENOB)为17.13位。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.