熔锥型光纤耦合器的制备与测试

论述了熔锥型光纤耦合器的功率耦合理论，利用熔融拉锥法制得了3dB单模光纤耦合器。利用可调谐光源和光谱分析仪组成的光学测试系统，测试了熔锥型光纤耦合器的附加损耗、方向性与均匀性等光学性能。实验表明，该方法具有制作简单、较低的附加损耗和良好的方向性等优点。利用扫描电子显微镜观察了光纤耦合器的表面，发现在光纤耦合器的锥区存在微裂纹，并且拉伸速度越快，微裂纹越明显；在光纤耦合器的耦合区．光纤表面存在微小晶粒，且拉伸速度越慢，晶粒越粗大。     

基于强耦合理论的熔锥型单模光纤耦合器研究

根据光纤的强耦合模理论,阐述了熔融拉锥型光纤耦合器的工作基理,并研究了熔融拉锥法制作单模光纤耦合器的过程,分析了各参数对耦合器性能的影响,利用光学测试系统测试了光纤耦合器各光学特性参数。经大量实验表明,强耦合模理论与实验结果吻合,说明该方法的可行性；同时拉锥法制作的光纤耦合器具有较好的性能特性,表明该方法具有制作过程简单、附加损耗低、方向性好、均匀性好、环境稳定以及成本低廉等优点。     

基于强耦合理论的熔锥型单模光纤耦合器研究

根据光纤的强耦合模理论,阐述了熔融拉锥型光纤耦合器的工作基理,并研究了熔融拉锥法制作单模光纤耦合器的过程,分析了各参数对耦合器性能的影响,利用光学测试系统测试了光纤耦合器各光学特性参数。经大量实验表明,强耦合模理论与实验结果吻合,说明该方法的可行性;同时拉锥法制作的光纤耦合器具有较好的性能特性,表明该方法具有制作过程简单、附加损耗低、方向性好、均匀性好、环境稳定以及成本低廉等优点。     

熔融拉锥型光纤耦合器损耗的实验研究

结合2×2熔锥型光纤耦合器的制作,实验研究了拉锥速度、耦合长度、火焰位置3个关键制作参数对耦合器的插入损耗和附加损耗影响。当拉锥速度控制在150μm/s时,耦合器的插入损耗和附加损耗可以控制在较低水平;在拉锥长度较短的区间内,插入损耗与拉锥长度基本成线性关系;制作低损耗耦合器,火焰存在最佳高度为5.75 mm。     

熔锥型光纤器件微观结构对光学性能的影响

针对熔锥型光纤耦合器存在的性能一致性差、损耗高和隔离度低等问题,利用耦合模方程,通过Matlab软件计算发现,光纤折射率0.02的变化可以使耦合器的分光比变化1个周期;基于分子振动理论,得出了光纤玻璃红外光谱特征峰与Si-O-Si键角的本质关联,并推导了键角、分子体积和折射率间的关系表达式;通过显微红外光谱测试发现,光纤耦合器熔锥区的折射率分布不均匀,其锥区的折射率最小,熔区次之,裸光纤最大,并且拉锥速度变化50 μm/s,折射率大约变化0.002,这将严重影响耦合器的光学性能.     

熔锥型宽带保偏光纤耦合器的研究

熔融拉锥型宽带保偏光纤耦合器的制造工艺及其工艺参数的设置,对器件的性能有直接的影响.根据熔融拉锥型宽带保偏光纤耦合器的原理和光纤电磁理论,结合试验事实,对熔融拉锥的工艺进行了总结:实现了常规熔融拉锥型宽带保偏光纤耦合器的制作,并对产品进行了测试,完成了预期研究目标.     

封装材料对光纤器件的性能影响

为查明熔锥型光纤器件封装材料对器件光学性能的影响,基于弱波导耦合模理论,建立了封装材料折射率与光纤耦合器分光比的数学模型,找到了它们之间的关联规律.以六轴光纤耦合器熔融拉锥机制作耦合器样品,以H2O与NaCl的不同配比实现封装材料折射率的变化,进行了相应的光学实验.实验结果表明:光纤耦合器的分光比对封装材料的折射率很敏感,折射率在一定的范围内,随着封装材料折射率的增大,耦合器分光比增大,并且具有单调性.这为封装材料的选取提供了理论依据与实验指导.     

熔锥型光纤耦合器损耗分析

利用几何光学理论对光纤耦合器的损耗进行分析 ;当环境介质折射率发生变化时光纤耦合器的损耗随之变化 ,理论推导损耗与环境介质折射率的关系公式 ,实验中利用OTDR检测反射光实现环境介质折射率变化的监测 ,利用拉锥机监视损耗的变化 ,得到的实验值与公式计算值基本吻合 ,证实了耦合器锥区环境介质折射率恒定是高质量耦合器的保证     

熔锥型光纤耦合器的工艺与显微形貌研究

以六轴光纤耦合机为实验平台,研究了熔融拉锥光纤耦合器的工艺、性能、显微形貌三者之间的相关规律.利用热电偶和电位差计测得了熔融拉锥时火焰的温度场分布,利用扫描电子显微镜观察了光纤耦合器的显微形貌.经大量观测实验研究发现:在光纤耦合器的锥形区域,存在皲裂,并且拉伸速度越快,皲裂越明显;在光纤耦合器的耦合区域,光纤表面存在微小晶粒,而内部没有发现微晶,即光纤耦合器玻璃表面发生了析晶现象,且拉伸速度越慢,晶粒越大.     

布拉格光栅辅助型上下话路滤波器的实验制作

采用波长为248nm的紫外光,在由标准单模光纤和自制的高掺锗光敏光纤熔融拉锥制作的2×2光纤失配耦合器上写入光纤光栅,实现了全光纤布拉格光栅(FBG)辅助失配耦合器型上下话路滤波器,并测试了器件的传输特性,器件的插入损耗和回波损耗分别为6.74dB和-18.84dB。用10Gbps的光信号进行了传输实验,分别测试了下话路前、后信号的眼图。与输入信号相比,下话路信号的信噪比从10.04dB降低到了9.27dB,信号的消光比从8.89dB降低到了4.68dB。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.