基于强耦合理论的熔锥型单模光纤耦合器研究

根据光纤的强耦合模理论,阐述了熔融拉锥型光纤耦合器的工作基理,并研究了熔融拉锥法制作单模光纤耦合器的过程,分析了各参数对耦合器性能的影响,利用光学测试系统测试了光纤耦合器各光学特性参数。经大量实验表明,强耦合模理论与实验结果吻合,说明该方法的可行性；同时拉锥法制作的光纤耦合器具有较好的性能特性,表明该方法具有制作过程简单、附加损耗低、方向性好、均匀性好、环境稳定以及成本低廉等优点。     

熔锥型光纤耦合器的制备与测试

论述了熔锥型光纤耦合器的功率耦合理论，利用熔融拉锥法制得了3dB单模光纤耦合器。利用可调谐光源和光谱分析仪组成的光学测试系统，测试了熔锥型光纤耦合器的附加损耗、方向性与均匀性等光学性能。实验表明，该方法具有制作简单、较低的附加损耗和良好的方向性等优点。利用扫描电子显微镜观察了光纤耦合器的表面，发现在光纤耦合器的锥区存在微裂纹，并且拉伸速度越快，微裂纹越明显；在光纤耦合器的耦合区．光纤表面存在微小晶粒，且拉伸速度越慢，晶粒越粗大。     

电子器件基础

0608681熔融拉锥光纤耦合器波长响应研究〔刊,中〕/夏益民//传感器技术.—2005,24(12).—32-34(E)基于变分理论,分析了常规对称单模熔融拉锥光纤耦合器的腰部区域和梯度区域的耦合行为,得出了耦合器耦合比波长的关系,并在熔融拉锥机的实验平台上进行了相应的波长响应实验,理论和实验结果都表明:在一定波长范围内,耦合比不但对波长敏感,且响应具有单调性。利用此特性,光纤耦合器有望作为光波长敏感元件,开发出结构简单、造价低廉的光波长探测器。参80608682新一代半导体器件参数的比例差值谱系统〔刊,中〕/纪志罡//中国集成电路.—2005,(12)…     

封装材料对光纤器件的性能影响

为查明熔锥型光纤器件封装材料对器件光学性能的影响,基于弱波导耦合模理论,建立了封装材料折射率与光纤耦合器分光比的数学模型,找到了它们之间的关联规律.以六轴光纤耦合器熔融拉锥机制作耦合器样品,以H2O与NaCl的不同配比实现封装材料折射率的变化,进行了相应的光学实验.实验结果表明:光纤耦合器的分光比对封装材料的折射率很敏感,折射率在一定的范围内,随着封装材料折射率的增大,耦合器分光比增大,并且具有单调性.这为封装材料的选取提供了理论依据与实验指导.     

工艺参数对光纤耦合器性能影响的实验研究

以六轴光纤耦合机为实验平台,利用电子表面扫描显微镜观察了光纤耦合器的微观结构形貌,研究了熔融拉锥光纤耦合器的工艺参数、性能以及微观结构三者之间的相关规律。     

2×2单模光纤耦合器的改进控制方法

探讨了熔融拉锥过程中工艺参数的优化设计,提出了一种在拉伸到一个较小预定分光比之后只进行加热熔融的耦合器制造的新方法,通过理论分析了其可行性,并通过VC 程序实现了该工艺的控制过程.通过大量的实验表明,该种方法制造的2×2单模光纤耦合器的性能有显著提高,而且可靠性明显优于普通熔锥型光纤耦合器.因此这种方法是一种耦合器的改进型制造方法.     

熔融拉锥型单模光纤光功率比耦合器的研制

本文由耦合波方程出发推导了熔融拉锥单模光纤耦合器的功率耦合比与拉伸长度的关系,并数值计算了光纤耦合器的光功率分配。实验上利用实验室现有的设备制作出2×2型、单窗口1×2型1550nm宽带耦合器,并完成了对制备出的光纤耦合器的光功率检测。通过理论与实验的比较得出熔融拉锥机制备的单模光纤光功率比耦合器的耦合曲线与理论上的耦合曲线基本一致,制备出的耦合器符合耦合器检验标准。     

熔锥型光纤耦合器的工艺与显微形貌研究

以六轴光纤耦合机为实验平台,研究了熔融拉锥光纤耦合器的工艺、性能、显微形貌三者之间的相关规律.利用热电偶和电位差计测得了熔融拉锥时火焰的温度场分布,利用扫描电子显微镜观察了光纤耦合器的显微形貌.经大量观测实验研究发现:在光纤耦合器的锥形区域,存在皲裂,并且拉伸速度越快,皲裂越明显;在光纤耦合器的耦合区域,光纤表面存在微小晶粒,而内部没有发现微晶,即光纤耦合器玻璃表面发生了析晶现象,且拉伸速度越慢,晶粒越大.     

熔锥型宽带保偏光纤耦合器的研究

熔融拉锥型宽带保偏光纤耦合器的制造工艺及其工艺参数的设置,对器件的性能有直接的影响.根据熔融拉锥型宽带保偏光纤耦合器的原理和光纤电磁理论,结合试验事实,对熔融拉锥的工艺进行了总结:实现了常规熔融拉锥型宽带保偏光纤耦合器的制作,并对产品进行了测试,完成了预期研究目标.     

熔锥型单模光纤耦合器模型的优化研究

在弱导和弱耦合近似条件下,对光纤耦合器的几何形状做近似处理,并采用连续函数进行描述.根据Snyderd的局部模式理论,采用三角波与高斯波的变系数叠加函数对光纤耦合器纵向各区域的光模场分布进行描述.利用局部模耦合理论和变分法计算分析光纤耦合器纵向各区域的传播常数和耦合系数,讨论耦合系数与结构参数和波长的关系.计算表明:光纤耦合器熔锥区对光纤耦合器中的光功率耦合行为的影响不可忽略,光纤纤芯半径和包层半径对耦合区和熔锥区的耦合系数的影响成相反趋势.因此,可以通过合理控制耦合器的结构参数,制作出宽带平坦光纤耦合器.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.