线性伸缩波形的雷达距离模糊特性及旁瓣抑制

该文提出了任意信号的时域线性伸缩表达式,给出了一类新的雷达波形,并对这类波形的压缩形式(匹配滤波输出)在时域进行旁瓣抑制数字滤波。仿真结果表明,这类波形的距离模糊函数的峰值旁瓣电平可达-18~-20 dB,而4dB主瓣宽度仅为相同参数的线性调频(LFM)压缩信号主瓣宽度的54%~70%;对这类波形的匹配滤波输出用该文改进的数字旁瓣抑制滤波器滤波后,其峰值旁瓣电平可低达-50dB,且主瓣宽度仅为单位采样符号长度。     

正交频分LFM信号的MIMO雷达的匹配滤波技术

MIM0雷达是一种全新体制的雷达技术,在其接收端利用发射端全向发射正交信号的原理,通过匹配滤波技术恢复每个发射信号分量,确保信号之间保持良好的正交性是MIMO雷达实现的关键。首先给出了相参MIM0雷达的信号模型;然后分析了正交频分线性调频信号的互模糊函数,并对互相关峰值电平出现的位置和幅度进行了分析,推导出了MIM0雷达相邻发射信号之间频率间隔所需满足的条件和相参MIM0雷达匹配滤波技术的数学模型;最后通过仿真实验证明了理论分析的正确性,而且仿真实验还表明：在正确设计MIM0雷达发射信号的条件下,噪声电平对匹配滤波技术的影响远大于自相关旁瓣电平和互相关峰值。     

基于凸优化的MIMO雷达的优化滤波器组设计

在正交波形MIMO雷达信号处理中,发射信号分离是其中的一个重要环节,一般可以通过匹配滤波器组来实现,而匹配滤波器组对信号分离是基于发射信号满足理想正交条件的,实际中由于很难得到理想的正交波形集,因此将会造成信号分离能力下降或分离不彻底,为此,提出一种优化滤波器组设计方法,以最小化滤波输出峰值旁瓣电平为目标函数,采用凸优化方法进行全局优化设计,计算机仿真表明,该方法所设计的优化滤波器组可以显著提高非理想正交波形MIMO雷达的信号分离能力。     

基于接收滤波器设计的MIMO-SAR波形耦合抑制

针对同频正交编码信号发射波形的多输入多输出合成孔径雷达(Multiple-input and Multiple-output Synthesis Aperture Radar,MIMO-SAR)因波形互耦产生的互相关噪声降低成像质量问题,提出了基于辅助变量设计接收滤波器的方法,通过失配处理压低距离副瓣电平,有效抑制波形间耦合带来的影响;并定义了副瓣电平抑制因子、综合积分旁瓣比改善因子等指标定量分析了算法性能.数值仿真实验表明:该方法能有效抑制正交波形间的互相关噪声,最大副瓣电平抑制在10dB左右,综合积分旁瓣比改善可达2.5dB.     

单脉冲脉内互补低距离旁瓣雷达波形设计

雷达脉冲压缩的距离旁瓣较高将会导致遮蔽效应的产生,已有的低旁瓣波形设计都是基于全脉冲相关进行处理。本文利用波形组合的方法进行波形设计,基于单脉冲脉内分段脉压信号处理方式和互补码自相关求和零旁瓣特征相结合,利用频域正交设计,将两个或多个互补序列调制至不同频点以子脉冲的形式分段合并为恒模单脉冲雷达波形。仿真试验表明,本文设计的单脉冲脉内互补低旁瓣波形脉压后的峰值旁瓣电平和积分旁瓣电平较低,分段脉压结合互补码零旁瓣特征的信号处理方式虽然会导致0.89 dB左右的信号处理增益损失和主瓣展宽,但却能够突破部分相位编码信号的峰值旁瓣电平下限。强弱目标场景仿真表明,与线性调频信号相比,本文提出的雷达波形不会导致强目标的副瓣对弱目标的遮掩。恒虚警检测仿真表明,在剔除强目标峰值后,本文所提波形对弱目标的检测概率要优于传统的线性调频信号。      

基于线性调频时宽的MIMO雷达正交波形设计

线性调频(LFM)信号是一种被广泛应用的大时宽带宽积信号,利用LFM信号的多样性可设计多输入多输出(MIMO)雷达的正交波形。该文针对现有波形相关函数存在的问题,以理论分析为基础,提出一种基于LFM时宽的发射波形,并给出了一种相应的正交波形设计方法。该方法以峰值旁瓣电平为准则,利用序列二次规划对各子脉冲LFM信号的时宽进行优化设计。仿真结果表明,与现有方法相比,所设计波形具有较低的自相关旁瓣电平和互相关电平。此外,通过数值实验分析了相关性能随波形个数及子脉冲个数的变化关系。     

基于稀疏矩阵和相关函数联合优化的MIMO-OFDM线性调频波形复用设计与实现方法

多输入多输出合成孔径雷达(Multiple-Input Multiple-Output Synthetic Aperture Radar, MIMO SAR)发射信号应该具有大时间带宽积和良好的模糊函数特性。该文联合优化稀疏矩阵和相关函数来设计多路正交的MIMO SAR 正交频分复用线性调频(OFDM chirp)信号,首先将MIMO SAR波形设计转化为跳频频率与跳频幅度的联合设计,并提出以最小化稀疏矩阵块相关系数及信号互相关峰值和为约束条件,采用迭代搜索法求解最佳编码矩阵;并以最小化信号自相关旁瓣峰值与互相关峰值之和为约束条件,采用遗传算法确定最佳幅度矩阵;最后采用组合优化搜索法设计出最佳信号。文中还分析了发射阵元数目、跳频总间隔数及总频率选择数与信号性能之间的关系。仿真结果表明此方法可以设计多路正交大时间带宽积OFDM chirp信号,同时降低信号的互相关峰值与自相关旁瓣峰值、提高互模糊性能。      

一种低时间旁瓣电平,高多普勒容限的脉压信号波形综合及其处理方法

本文针对某雷达的要求,寻到了一种时间旁瓣电平低、多普勒容限高的脉冲压缩信号－截断高斯窗非线性调频（ＮＬＦＭ）信号,介绍了此信号波形的综合方法,为进一步提高脉压性能,给出了修正型匹配滤波处理方法,并给出了此种信号在小脉压比时经匹配滤波和修正型匹配滤波处理后脉压性能的计算机仿真结果。     

非均匀间隔OFD-LFM的MIMO雷达波形设计

正交频分线性调频(OFD-LFM)信号是多输入多输出(MIMO)雷达的一种常用发射波形,在分析其空时特性的基础上,针对空域合成信号自相关旁瓣存在的问题,该文提出一种非均匀间隔的OFD-LFM波形,并给出了相应的波形设计方法。该方法建立空时联合优化的模型,采用序列二次规划求解得到各信号的频率间隔和初相。所设计波形的发射方向图近似全向,空域合成信号具有良好的相关性能。     

一种基于遗传算法的正交波形设计方法

数字阵列雷达可通过子阵组合,发射多波束等方式实现同时搜索和跟踪不同空域目标,其中发射正交波形设计是数字阵列雷达的关键技术之一。本文以降低波形信号的自相关旁瓣峰值及互相关峰值为目标,采用改进的遗传算法对随机生成的四相码波形信号进行正交优化。仿真表明,优化设计的正交四相码波形相比于其他文献在自相关旁瓣峰值及互相关峰值性能上有较大改善。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.